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Shijian I Luo

from South Hamilton, MA
Age ~55
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Also known as:
Shi Jian Luo, Si Luo, Shi-Jian Luo, Shijian Lwo, Luo Shijian, Luo Shi-Jian
Phone and address:
66 Fox Run Rd, Hamilton, MA 01982
(978) 626-1159
Related to:
Christine C Lee, 60
Connected to:
Anna S Luo, 61Audrey Luo, 29Billy G Luo, 72Bin Luo, 67Brince Luo, 77Christina M Luo, 55Chuanjiang Luo, 42Claudia H Luo, 56Congyun C Luo, 63Dengpan Luo, 54

Shijian Luo Phones & Addresses

  • 66 Fox Run Rd, South Hamilton, MA 01982 (978) 626-1159
  • S Hamilton, MA
  • 387 Squire Dr, Rochester, NY 14623 (585) 424-6866
  • 387 W Squire Dr APT 8, Rochester, NY 14623
  • 71 Bending Creek Rd, Rochester, NY 14624
  • Danvers, MA
  • 435 Riddle Rd, Cincinnati, OH 45220 (513) 861-8508
  • S Hamilton, MA

Industries

Semiconductors

Resumes

Resumes

Shijian Luo Photo 1

Shijian Luo

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Location:
Greater Boston Area
Industry:
Semiconductors

Publications

Us Patents

Plasma Mediated Ashing Processes That Include Formation Of A Protective Layer Before And/Or During The Plasma Mediated Ashing Process

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US Patent:
20090277871, Nov 12, 2009
Filed:
Mar 5, 2009
Appl. No.:
12/398390
Inventors:
Ivan Berry - Amesbury MA, US
Orlando Escorcia - Falls Church VA, US
Keping Han - Reading MA, US
Jianan Hou - Lexington MA, US
Shijian Luo - South Hamilton MA, US
Carlo Waldfried - Middleton MA, US
Assignee:
AXCELIS TECHNOLOGIES, INC. - Beverly MA
International Classification:
C23F 1/00
C23F 1/08
US Classification:
216 37, 15634524
Abstract:
Processes for stripping high dose ion implanted photoresist while minimizing substrate loss. The processes generally include passivation of the substrate surface before and/or during a plasma mediated stripping process. By passivating the substrate surface before and/or during the plasma mediated stripping process, oxidation is substantially reduced during plasma stripping thereby leading to reduced substrate loss.

Front End Of Line Plasma Mediated Ashing Processes And Apparatus

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US Patent:
20100130017, May 27, 2010
Filed:
Nov 21, 2008
Appl. No.:
12/275394
Inventors:
Shijian Luo - South Hamilton MA, US
Orlando Escorcia - Falls Church VA, US
Carlo Waldfried - Falls Church VA, US
Ivan Berry - Ellicott City MD, US
Assignee:
AXCELIS TECHNOLOGIES, INC. - Beverly MA
International Classification:
H01L 21/3065
US Classification:
438710, 15634535, 257E21218
Abstract:
Front end of line (FEOL) plasma mediated ashing processes for removing organic material from a substrate generally includes exposing the substrate to the plasma to selectively remove photoresist, implanted photoresist, polymers and/or residues from the substrate, wherein the plasma contains a ratio of active nitrogen and active oxygen that is larger than a ratio of active nitrogen and active oxygen obtainable from plasmas of gas mixtures comprising oxygen gas and nitrogen gas. The plasma exhibits high throughput while minimizing and/or preventing substrate oxidation and dopant bleaching. Plasma apparatuses are also described.

Substantially Non-Oxidizing Plasma Treatment Devices And Processes

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US Patent:
20110136346, Jun 9, 2011
Filed:
Dec 4, 2009
Appl. No.:
12/631117
Inventors:
Phillip Geissbühler - Melrose MA, US
Ivan Berry - Amesbury MA, US
Armin Huseinovic - Medford MA, US
Shijian Luo - South Hamilton MA, US
Aseem Kumar Srivastava - Andover MA, US
Carlo Waldfried - Middleton MA, US
Assignee:
AXCELIS TECHNOLOGIES, INC. - Beverly MA
International Classification:
H01L 21/3065
G03F 7/42
B08B 7/00
US Classification:
438710, 134 12, 15634535, 15634536, 15634533, 15634529, 15634525, 15634524, 15634527, 257E21218
Abstract:
Non-oxidizing plasma treatment devices for treating a semiconductor workpiece generally include a substantially non-oxidizing gas source; a plasma generating component in fluid communication with the non-oxidizing gas source; a process chamber in fluid communication with the plasma generating component, and an exhaust conduit centrally located in a bottom wall of the process chamber. In one embodiment, the process chamber is formed of an aluminum alloy containing less than 0.15% copper by weight; In other embodiments, the process chamber includes a coating of a non-copper containing material to prevent formation of copper hydride during processing with substantially non-oxidizing plasma. In still other embodiments, the process chamber walls are configured to be heated during plasma processing. Also disclosed are non-oxidizing plasma processes.

Plasma Mediated Ashing Processes

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US Patent:
20110226280, Sep 22, 2011
Filed:
May 27, 2011
Appl. No.:
13/117488
Inventors:
Ivan L. Berry - Amesbury MA, US
Carlo Waldfried - Middleton MA, US
Shijian Luo - South Hamilton MA, US
Orlando Escorcia - Falls Church VA, US
Assignee:
AXCELIS TECHNOLOGIES, INC. - Beverly MA
International Classification:
B08B 7/00
B08B 13/00
C23F 1/08
US Classification:
134 11, 1563451, 15634541
Abstract:
A plasma ashing process for removing photoresist, polymers and/or residues from a substrate comprises placing the substrate including the photoresist, polymers, and/or residues into a reaction chamber; generating a plasma from a gas mixture comprising oxygen gas (O) and/or an oxygen containing gas; suppressing and/or reducing fast diffusing species in the plasma; and exposing the substrate to the plasma to selectively remove the photoresist, polymers, and/or residues from the substrate, wherein the plasma is substantially free from fast diffusing species.

Plasma Mediated Ashing Processes

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US Patent:
20120024314, Feb 2, 2012
Filed:
Jul 27, 2010
Appl. No.:
12/844193
Inventors:
SHIJIAN LUO - South Hamilton MA, US
ORLANDO ESCORCIA - Falls Church VA, US
CARLO WALDFRIED - Middleton MA, US
Assignee:
AXCELIS TECHNOLOGIES, INC. - Beverly MA
International Classification:
B08B 7/00
US Classification:
134 11
Abstract:
Plasma mediated ashing processes for removing organic material from a substrate generally includes exposing the substrate to the plasma to selectively remove photoresist, implanted photoresist, polymers and/or residues from the substrate, wherein the plasma contains a ratio of active nitrogen and active oxygen that is larger than a ratio of active nitrogen and active oxygen obtainable from plasmas of gas mixtures comprising oxygen gas and nitrogen gas. The plasma exhibits high throughput while minimizing and/or preventing substrate oxidation and dopant bleaching. Plasma apparatuses are also described.

Substantially Non-Oxidizing Plasma Treatment Devices And Processes

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US Patent:
20130248113, Sep 26, 2013
Filed:
May 13, 2013
Appl. No.:
13/893062
Inventors:
Ivan Berry - Amesbury MA, US
Armin Huseinovic - Medford MA, US
Shijian Luo - South Hamilton MA, US
Aseem Kumar Srivastava - Andover MA, US
Carlo Waldfried - Middleton MA, US
Assignee:
Lam Research Corporation - Fremont CA
International Classification:
H01L 21/67
US Classification:
15634527, 15634529, 15634524
Abstract:
Non-oxidizing plasma treatment devices for treating a semiconductor workpiece generally include a substantially non-oxidizing gas source; a plasma generating component in fluid communication with the non-oxidizing gas source; a process chamber in fluid communication with the plasma generating component, and an exhaust conduit centrally located in a bottom wall of the process chamber. In one embodiment, the process chamber is formed of an aluminum alloy containing less than 0.15% copper by weight; In other embodiments, the process chamber includes a coating of a non-copper containing material to prevent formation of copper hydride during processing with substantially non-oxidizing plasma. In still other embodiments, the process chamber walls are configured to be heated during plasma processing. Also disclosed are non-oxidizing plasma processes.

Plasma Mediated Ashing Processes

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US Patent:
20140076353, Mar 20, 2014
Filed:
Nov 18, 2013
Appl. No.:
14/082282
Inventors:
Carlo Waldfried - Middleton MA, US
Shijian Luo - South Hamilton MA, US
Orlando Escorcia - Falls Church VA, US
Assignee:
Lam Research Corporation - Fremont CA
International Classification:
H01L 21/02
US Classification:
134 11
Abstract:
A plasma ashing process for removing photoresist, polymers and/or residues from a substrate, the process includes placing the substrate including the photoresist, polymers, and/or residues into a reaction chamber; generating a plasma from a gas mixture comprising oxygen gas (0) and/or an oxygen containing gas; suppressing and/or reducing fast diffusing species in the plasma by adding an atomic oxygen scavenging gas to the gas mixture; and exposing the substrate to the plasma to selectively remove the photoresist, polymers, and/or residues from the substrate, wherein the plasma is substantially free from fast diffusing species.

Device Packaging Facility And Method, And Device Processing Apparatus Utilizing Deht

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US Patent:
20190229086, Jul 25, 2019
Filed:
Apr 2, 2019
Appl. No.:
16/372420
Inventors:
- Wakefield MA, US
Joshua PINNOLIS - Newton MA, US
Shijian LUO - South Hamilton MA, US
Assignee:
SEMIgear, Inc. - Wakefield MA
International Classification:
H01L 23/00
H01L 21/66
B23K 1/20
Abstract:
Provided are a device packing facility and method using DEHT and a device processing apparatus utilizing the DEHT. The device packaging facility includes a mounting unit providing bis(2-ethylhexyl) terephthalate (DEHT) between first and second devices to attach the first and second devices to each other, a processing unit thermally processing the first and second devices that are attached to each other to remove the DEHT and fix the first and second devices to each other, and a transfer unit transferring the first and second devices that are attached to each other from the mounting unit to the processing unit.
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Shijian I Luo from South Hamilton, MA, age ~55 Get Report