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Shankar Swaminathan

from Chandler, AZ
Age ~40
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Connected to:
Aarti Swaminathan, 48Aruna Swaminathan, 42Balakumar Swaminathan, 38Jennifer Swaminathan, 38Kalyani Swaminathan, 46Karthick Swaminathan, 44Manikandan Swaminathan, 38Narayani M Swaminathan, 44Pavithra Swaminathan, 39Prashant Swaminathan, 36

Shankar Swaminathan Phones & Addresses

  • Chandler, AZ
  • 227 W Portland St, Phoenix, AZ 85003
  • Beaverton, OR
  • Stanford, CA

Work

Company: Lam research Mar 2014 to Mar 2017 Position: Senior manager, ald process technology

Education

Degree: Doctorates, Doctor of Philosophy School / High School: Stanford University 2005 to 2010 Specialities: Materials Science, Engineering, Philosophy

Skills

Semiconductors • Investments • Technology • Science • Strategy • Materials Science

Languages

English • Tamil • Hindi

Industries

Semiconductors

Resumes

Resumes

Shankar Swaminathan Photo 1

Director, Process And Applications Development

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Location:
1176 east Erie St, Gilbert, AZ 85295
Industry:
Semiconductors
Work:
Lam Research Mar 2014 - Mar 2017
Senior Manager, Ald Process Technology
Asm Mar 2014 - Mar 2017
Director, Process and Applications Development
Lam Research Mar 2013 - Mar 2014
Staff Engineer and Technologist
Novellus Systems Oct 2010 - Mar 2013
Process Engineer, Senior Process Engineer
Intel Corporation 2009 - 2009
Device Intern, Components Research, Technology and Manufacturing Group
Education:
Stanford University 2005 - 2010
Doctorates, Doctor of Philosophy, Materials Science, Engineering, Philosophy Stanford University 2007 - 2009
Master of Science, Masters Indian Institute of Technology, Madras 2001 - 2005
Stanford University
Masters, Engineering, Management Science Indian Institute of Technology, Madras
Bachelors, Engineering
Skills:
Semiconductors
Investments
Technology
Science
Strategy
Materials Science
Languages:
English
Tamil
Hindi

Publications

Us Patents

Plasma Activated Conformal Dielectric Film Deposition

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US Patent:
8637411, Jan 28, 2014
Filed:
Sep 23, 2011
Appl. No.:
13/242084
Inventors:
Shankar Swaminathan - Hillsboro OR, US
Jon Henri - West Linn OR, US
Dennis M. Hausmann - Lake Oswego OR, US
Pramod Subramonium - Beaverton OR, US
Mandyam Sriram - Beaverton OR, US
Vishwanathan Rangarajan - Beaverton OR, US
Kirthi K. Kattige - Portland OR, US
Bart J. van Schravendijk - Sunnyvale CA, US
Andrew J. McKerrow - Lake Oswego OR, US
Assignee:
Novellus Systems, Inc. - San Jose CA
International Classification:
H01L 21/469
H01L 21/31
H01L 21/311
US Classification:
438763, 438787, 438702
Abstract:
Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by intermittent delivery of dopant species to the film between the cycles of adsorption and reaction.

Conformal Doping Via Plasma Activated Atomic Layer Deposition And Conformal Film Deposition

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US Patent:
20130040447, Feb 14, 2013
Filed:
Sep 7, 2012
Appl. No.:
13/607386
Inventors:
Shankar Swaminathan - Hillsboro OR, US
Mandyam Sriram - Beaverton OR, US
Bart van Schravendijk - Sunnyvale CA, US
Pramod Subramonium - Beaverton OR, US
Adrien La Voie - Portland OR, US
International Classification:
H01L 21/225
B05C 9/02
B05C 11/00
US Classification:
438558, 118697, 257E21144
Abstract:
Disclosed herein are methods of doping a patterned substrate in a reaction chamber. The methods may include forming a first conformal film layer which has a dopant source including a dopant, and driving some of the dopant into the substrate to form a conformal doping profile. In some embodiments, forming the first film layer may include introducing a dopant precursor into the reaction chamber, adsorbing the dopant precursor under conditions whereby it forms an adsorption-limited layer, and reacting the adsorbed dopant precursor to form the dopant source. Also disclosed herein are apparatuses for doping a substrate which may include a reaction chamber, a gas inlet, and a controller having machine readable code including instructions for operating the gas inlet to introduce dopant precursor into the reaction chamber so that it is adsorbed, and instructions for reacting the adsorbed dopant precursor to form a film layer containing a dopant source.

Method For Selective Deposition Of Silicon Nitride Layer And Structure Including Selectively-Deposited Silicon Nitride Layer

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US Patent:
20220351958, Nov 3, 2022
Filed:
Jul 7, 2022
Appl. No.:
17/859929
Inventors:
- Almere, NL
Paul Ma - Scottsdale AZ, US
Bed Prasad Sharma - Gilbert AZ, US
Shankar Swaminathan - Phoenix AZ, US
International Classification:
H01L 21/02
H01J 37/32
H01L 21/768
C23C 16/455
C23C 16/34
H01L 21/687
Abstract:
A method for selectively depositing silicon nitride on a first material relative to a second material is disclosed. An exemplary method includes treating the first material, and then selectively depositing a layer comprising silicon nitride on the second material relative to the first material. Exemplary methods can further include treating the deposited silicon nitride.

Methods For Depositing A Molybdenum Metal Film Over A Dielectric Surface Of A Substrate By A Cyclical Deposition Process And Related Semiconductor Device Structures

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US Patent:
20220216105, Jul 7, 2022
Filed:
Mar 22, 2022
Appl. No.:
17/700635
Inventors:
- Almere, NL
Kiran Shrestha - Phoenix AZ, US
Shankar Swaminathan - Phoenix AZ, US
Chiyu Zhu - Helsinki, FI
Henri Jussila - Espoo, FI
Qi Xie - Wilsele, BE
International Classification:
H01L 21/768
H01L 21/285
C23C 16/14
C23C 16/02
H01L 23/532
C23C 16/04
C23C 16/455
Abstract:
Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process are disclosed. The methods may include: providing a substrate comprising a dielectric surface into a reaction chamber; depositing a nucleation film directly on the dielectric surface; and depositing a molybdenum metal film directly on the nucleation film, wherein depositing the molybdenum metal film includes: contacting the substrate with a first vapor phase reactant comprising a molybdenum halide precursor; and contacting the substrate with a second vapor phase reactant comprising a reducing agent precursor. Semiconductor device structures including a molybdenum metal film disposed over a surface of a dielectric material with an intermediate nucleation film are also disclosed.

Methods For Depositing A Molybdenum Nitride Film On A Surface Of A Substrate By A Cyclical Deposition Process And Related Semiconductor Device Structures Including A Molybdenum Nitride Film

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US Patent:
20220186364, Jun 16, 2022
Filed:
Mar 7, 2022
Appl. No.:
17/688258
Inventors:
- Almere, NL
Bhushan Zope - Phoenix AZ, US
Shankar Swaminathan - Phoenix AZ, US
Charles Dezelah - Helsinki, FI
Qi Xie - Wilsele, BE
Giuseppe Alessio Verni - Ottignies, BE
International Classification:
C23C 16/34
C23C 16/02
C23C 16/08
C23C 16/455
H01L 27/108
G11C 5/06
H01L 21/28
H01L 29/06
H01L 29/423
H01L 29/49
H01L 29/78
H01L 29/786
Abstract:
Methods for depositing a molybdenum nitride film on a surface of a substrate are disclosed. The methods may include: providing a substrate into a reaction chamber; and depositing a molybdenum nitride film directly on the surface of the substrate by performing one or more unit deposition cycles of cyclical deposition process, wherein a unit deposition cycle may include, contacting the substrate with a first vapor phase reactant comprising a molybdenum halide precursor, and contacting the substrate with a second vapor phase reactant comprising a nitrogen precursor. Semiconductor device structures including a molybdenum nitride film are also disclosed.

Vapor Deposition Of Tungsten Films

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US Patent:
20210404060, Dec 30, 2021
Filed:
Jun 21, 2021
Appl. No.:
17/353356
Inventors:
- Almere, NL
Eric James Shero - Phoenix AZ, US
Shankar Swaminathan - Phoenix AZ, US
Bhushan Zope - Phoenix AZ, US
International Classification:
C23C 16/455
C23C 16/06
Abstract:
Vapor deposition methods for depositing tungsten-containing thin films are provided. In some embodiments a substrate is contacted with a vapor phase first reactant comprising a tungsten precursor, such as a tungsten oxyhalide, a second reactant such as CO, and a third reactant such as H. In some embodiments a substrate is contacted with a vapor phase first reactant comprising a tungsten precursor, such as a tungsten hexacarbonyl, a second reactant comprising a first oxidant, such as HO, and a third reactant comprising a reducing agent, such as CO. In some embodiments the deposition process is an ALD process.

Vapor Deposition Of Films Comprising Molybdenum

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US Patent:
20210407809, Dec 30, 2021
Filed:
Jun 21, 2021
Appl. No.:
17/353262
Inventors:
- Almere, NL
Eric Christopher Stevens - Tempe AZ, US
Shankar Swaminathan - Phoenix AZ, US
Eric James Shero - Phoenix AZ, US
Robert Brennan Milligan - Phoenix AZ, US
International Classification:
H01L 21/285
H01L 21/768
C23C 16/08
C23C 16/455
Abstract:
Vapor deposition processes for forming thin films comprising molybdenum on a substrate are provide. In some embodiments the processes comprise a plurality of deposition cycles in which the substrate is separately contacted with a vapor phase molybdenum precursor comprising a molybdenum halide, a first reactant comprising CO, and a second reactant comprising H. In some embodiments the thin film comprises MoC, MoC, or MoOC. In some embodiments the substrate is additionally contacted with a nitrogen reactant and a thin film comprising molybdenum, carbon and nitrogen is deposited, such as MoCN or MoOCN.

Apparatus And Methods For Performing An In-Situ Etch Of Reaction Chambers With Fluorine-Based Radicals

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US Patent:
20210348271, Nov 11, 2021
Filed:
May 4, 2021
Appl. No.:
17/307007
Inventors:
- Almere, NL
Bhushan Zope - Phoenix AZ, US
Shankar Swaminathan - Phoenix AZ, US
Theodorus G.M. Oosterlaken - Oudewater, NL
International Classification:
C23C 16/44
C23C 16/52
C23C 16/455
C23C 16/06
Abstract:
An apparatus and method for cleaning or etching a molybdenum film or a molybdenum nitride film from an interior of a reaction chamber in a reaction system are disclosed. A remote plasma unit is utilized to activate a halide precursor mixed with an inert gas source to form a radical gas. The radical gas reacts with the molybdenum film or the molybdenum nitride film to form a by-product that is removed from the interior of the reaction chamber by a purge gas.
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Shankar Swaminathan from Chandler, AZ, age ~40 Get Report