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Shahab Shervin Phones & Addresses

  • Norwalk, CT
  • Wilton, CT
  • Stratford, CT
  • Bridgeport, CT
  • Houston, TX
  • Manhattan, KS
  • Columbia, MO

Work

Company: Asml Aug 2019 Position: Materials scientist and engineer

Education

Degree: Doctorates, Doctor of Philosophy School / High School: University of Houston 2013 to 2017 Specialities: Materials Science, Engineering, Philosophy

Skills

Materials Science • Nanotechnology • Characterization • Microsoft Office • Teaching • Simulations • Thin Films • Data Analysis • Semiconductors • Scanning Electron Microscopy • Raman Spectroscopy • Afm • Spectroscopy • X Ray Diffraction Analysis • Semiconductor Process • Design of Experiments • Metallurgy • Autocad • Sputter Deposition • Iii Nitride Materials • Electrochemistry • E Beam Evaporation • Electron Microscopy • Nanofabrication • Nanocomposites • Carbon Nanotubes • Graphene • Photovoltaics • Nanomaterials • Solar Cells • Powder X Ray Diffraction • Thin Film Characterization • Materials • Research and Development • Semiconductor Industry • Materials Characterization • Physical Vapor Deposition • Chemical Vapor Deposition • Sputtering • Raman • Thin Film Coating • Photolithography • Ellipsometry • Electroplating • Profilometer • Semiconductor Device • Ftir • Ultra High Vacuum • Vacuum • Research • Matlab • Photonics

Languages

English • Turkish • Persian

Ranks

Certificate: Graduate Research and Scholarship Projects (Grasp)

Interests

Children • Green Energy • Research and Development • Education • Environment • Human Rights • Advance Technologies • Arts and Culture

Industries

Semiconductors

Resumes

Resumes

Shahab Shervin Photo 1

Materials Scientist And Engineer

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Location:
Houston, TX
Industry:
Semiconductors
Work:
Asml
Materials Scientist and Engineer

University of Houston Jun 2017 - Jun 2018
Postdoctoral Researcher

University of Houston Aug 2013 - Jun 2017
Doctoral Researcher, Energy Research Park

University of Houston Aug 2013 - Aug 2015
Teaching Assistant

University of Missouri Oct 2012 - Aug 2013
Research Assistant, Gangopadhyay Research Group, Center For Nano and Micro Systems
Education:
University of Houston 2013 - 2017
Doctorates, Doctor of Philosophy, Materials Science, Engineering, Philosophy
University of Missouri - Columbia 2012 - 2013
Doctorates, Doctor of Philosophy, Electronics Engineering, Philosophy
Sharif University of Technology 2006 - 2008
Masters, Engineering
Isfahan University of Technology 2001 - 2006
Bachelors, Engineering
Skills:
Materials Science
Nanotechnology
Characterization
Microsoft Office
Teaching
Simulations
Thin Films
Data Analysis
Semiconductors
Scanning Electron Microscopy
Raman Spectroscopy
Afm
Spectroscopy
X Ray Diffraction Analysis
Semiconductor Process
Design of Experiments
Metallurgy
Autocad
Sputter Deposition
Iii Nitride Materials
Electrochemistry
E Beam Evaporation
Electron Microscopy
Nanofabrication
Nanocomposites
Carbon Nanotubes
Graphene
Photovoltaics
Nanomaterials
Solar Cells
Powder X Ray Diffraction
Thin Film Characterization
Materials
Research and Development
Semiconductor Industry
Materials Characterization
Physical Vapor Deposition
Chemical Vapor Deposition
Sputtering
Raman
Thin Film Coating
Photolithography
Ellipsometry
Electroplating
Profilometer
Semiconductor Device
Ftir
Ultra High Vacuum
Vacuum
Research
Matlab
Photonics
Interests:
Children
Green Energy
Research and Development
Education
Environment
Human Rights
Advance Technologies
Arts and Culture
Languages:
English
Turkish
Persian
Certifications:
Graduate Research and Scholarship Projects (Grasp)

Publications

Us Patents

Externally-Strain-Engineered Semiconductor Photonic And Electronic Devices And Assemblies And Methods Of Making Same

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US Patent:
20190044307, Feb 7, 2019
Filed:
Sep 29, 2018
Appl. No.:
16/147616
Inventors:
- Houston TX, US
Shahab Shervin - Houston TX, US
Seung Hwan Kim - Houston TX, US
Assignee:
University of Houston System - Houston TX
International Classification:
H01S 5/32
H01S 5/34
H01L 21/8238
H01S 5/323
H01L 29/06
H01L 29/49
H01L 29/84
H01L 29/78
H01L 29/778
H01L 29/20
H01L 29/22
H01L 29/10
H01L 33/02
H01L 33/48
Abstract:
Externally-strained devices such as LED and FET structures as discussed herein may have strain applied before or during their being coupled to a housing or packaging substrate. The packaging substrate may also be strained prior to receiving the structure. The strain on the devices enables modulation of light intensity, color, and electrical currents in some embodiments, and in alternate embodiments, enables a fixed strain to be induced and maintained in the structures.

Externally-Strain-Engineered Semiconductor Photonic And Electronic Devices And Assemblies And Methods Of Making Same

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US Patent:
20180090911, Mar 29, 2018
Filed:
Apr 8, 2016
Appl. No.:
15/562462
Inventors:
- Houston TX, US
Shahab Shervin - Houston TX, US
Seung Hwan Kim - Houston TX, US
Assignee:
University of Houston System - Houston TX
International Classification:
H01S 5/32
H01S 5/323
H01S 5/34
H01L 21/8238
H01L 29/49
H01L 29/78
Abstract:
Externally-strained devices such as LED and FET structures as discussed herein may have strain applied before or during their being coupled to a housing or packaging substrate. The packaging substrate may also be strained prior to receiving the structure. The strain on the devices enables modulation of light intensity, color, and electrical currents in some embodiments, and in alternate embodiments, enables a fixed strain to be induced and maintained in the structures.
Shahab Shervin from Norwalk, CT, age ~42 Get Report