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Sabarni Palit Phones & Addresses

  • 6293 Narcissus Ave, Newark, CA 94560
  • Fremont, CA
  • Schenectady, NY
  • Guilderland, NY
  • Durham, NC
  • Keene, NH
  • Columbus, IN
  • Terre Haute, IN
  • 9 Downing Sq APT A, Guilderland, NY 12084

Work

Company: Ge global research Dec 2010 Position: Photonic device scientist

Education

School / High School: Duke University 2005 to 2009

Skills

Simulations • Matlab • Semiconductors • Sensors • Thin Films • Photolithography • Photonic Devices and Systems • Electrical Engineering • Semiconductor Fabrication • Research • Labview • C • Characterization • Testing • Leadership • Optical Devices • Product Development • Research and Development • Simulink • Rsoft • Microsoft Word • Embedded Systems • Mathematica • R&D • Autocad • Visio • Silvaco • Vhdl • Cross Functional Team Leadership

Languages

Hindi • Bengali • Marathi • English

Industries

Semiconductors

Public records

Vehicle Records

Sabarni Palit

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Address:
9 Downing Sq APT A, Guilderland, NY 12084
Phone:
(518) 387-5000
VIN:
5NPEC4AB5CH386135
Make:
HYUNDAI
Model:
SONATA
Year:
2012

Resumes

Resumes

Sabarni Palit Photo 1

Senior Engineer

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Location:
San Francisco, CA
Industry:
Semiconductors
Work:
GE Global Research since Dec 2010
Photonic Device Scientist

Duke University Sep 2005 - Dec 2010
Graduate Research Assistant

KPIT Cummins Ltd. Jul 2003 - Jul 2005
Team Lead

Cummins Inc. Oct 2002 - May 2003
Engineering Intern
Education:
Duke University 2005 - 2009
Rose-Hulman Institute of Technology 2000 - 2003
University of Pune 1996 - 2000
Skills:
Simulations
Matlab
Semiconductors
Sensors
Thin Films
Photolithography
Photonic Devices and Systems
Electrical Engineering
Semiconductor Fabrication
Research
Labview
C
Characterization
Testing
Leadership
Optical Devices
Product Development
Research and Development
Simulink
Rsoft
Microsoft Word
Embedded Systems
Mathematica
R&D
Autocad
Visio
Silvaco
Vhdl
Cross Functional Team Leadership
Languages:
Hindi
Bengali
Marathi
English

Publications

Us Patents

Die Repatterning Transmission Lines On Silicon Photomultipliers

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US Patent:
20170330980, Nov 16, 2017
Filed:
May 16, 2016
Appl. No.:
15/155507
Inventors:
- Schenectady NY, US
David Leo McDANIEL - Dousman WI, US
Sergei Ivanovich DOLINSKY - Clifton Park NY, US
Sabarni PALIT - Niskayuna NY, US
International Classification:
H01L 31/02
H01L 31/107
H01L 31/028
H01L 31/18
H01L 27/144
Abstract:
A silicon photomultiplier array includes a plurality of microcells within the photomultiplier array and located on the silicon wafer, the plurality of microcells arranged in rows and columns, each of the plurality of microcells including an output port, and configured to provide a pulse waveform having pulse characteristics, at least one repatterning dielectric layer in contact with a silicon wafer layer back surface, the silicon wafer having an active surface opposed to the back surface, and a plurality of respective through-silicon-vias (TSVs) coupling the output port of respective ones of the plurality of microcells on the active surface of the silicon wafer to a plurality of respective circuit traces on the at least one repatterning dielectric layer disposed on the back surface of the silicon wafer. A method for producing the silicon photomultiplier array is also disclosed.

Solid State Photomultiplier With Wide Temperature Range Of Operation

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US Patent:
20170192112, Jul 6, 2017
Filed:
Dec 31, 2015
Appl. No.:
14/986001
Inventors:
- Schenectady NY, US
Stanislav Ivanovich Soloviev - Ballston Lake NY, US
Sergei Ivanovich Dolinsky - Clifton Park NY, US
James Jay McMahon - Clifton Park NY, US
Sabarni Palit - Guilderland NY, US
International Classification:
G01T 1/24
H01L 31/115
Abstract:
A solid state photomultiplier includes at least one microcell configured to generate an initial analog signal when exposed to optical photons. The solid state photomultiplier further includes a quench circuit electrically coupled with the at least one microcell. The quench circuit includes at least one quench resistor configured to exhibit a substantially constant temperature coefficient of resistance over a selected temperature range.

Microstructured Optical Fibers For Gas Sensing Systems

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US Patent:
20170097464, Apr 6, 2017
Filed:
Oct 6, 2015
Appl. No.:
14/876411
Inventors:
- Schenectady NY, US
Niloy Choudhury - Glenville NY, US
Sabarni Palit - Guilderland NY, US
International Classification:
G02B 6/02
G01J 3/02
G01N 21/3504
Abstract:
Microstructured optical fiber (MOF) includes a cladding extending a length between first and second ends. The cladding includes an inner porous microstructure that at least partially surrounds a hollow core. A perimeter contour of the hollow core has a non-uniform radial distance from a center axis of the cladding such that first segments of the cladding along the perimeter contour have a shorter radial distance from the center axis relative to second segments of the cladding along the perimeter contour. The cladding receives and propagates light energy through the hollow core, and the inner porous microstructure substantially confines the light energy within the hollow core. The cladding defines at least one port hole that extends radially from an exterior surface of the cladding to the hollow core. Each port hole penetrates the perimeter contour of the hollow core through one of the second segments of the cladding.

Solid State Photo Multiplier Device

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US Patent:
20150285942, Oct 8, 2015
Filed:
Apr 4, 2014
Appl. No.:
14/244979
Inventors:
- Schenectady NY, US
Peter Micah Sandvik - Niskayuna NY, US
Sergei Ivanovich Dolinsky - Clifton Park NY, US
Cheng-Po Chen - Niskayuna NY, US
Helene Claire Climent - Sugar Land TX, US
Sabarni Palit - Guilderland NY, US
Assignee:
General Electric Company - Schenectady NY
International Classification:
G01V 5/08
E21B 47/00
Abstract:
A method and an apparatus for detecting photons are disclosed. The apparatus includes a solid state photo multiplier device having a plurality of microcells that have a band gap greater than about 1.7 eV at 25 C. The solid state photo multiplier device further includes an integrated quenching device and a thin film coating associated with each of the microcells. The solid state photo multiplier device disclosed herein operates in a temperature range of about −40 C. to about 275 C.

Systems And Methods For Addressing One Or More Sensors Along A Cable

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US Patent:
20150276686, Oct 1, 2015
Filed:
Mar 26, 2014
Appl. No.:
14/225768
Inventors:
- Schenectady NY, US
Sachin Narahari Dekate - Niskayuna NY, US
Sabarni Palit - Guilderland NY, US
Ansas Matthias Kasten - Niskayuna NY, US
Reza Ghandi - Niskayuna NY, US
Assignee:
General Electric Company - Schenectady NY
International Classification:
G01N 29/42
G01N 29/24
E21B 47/06
B81B 7/02
Abstract:
A sensor interrogation unit in one embodiment includes a control module, a reading module, and a determination module. The control module is configured to control one or more lasers to provide a pulsed signal to at least one sensor. Each period of the pulsed signal has a first component having a first intensity and a second component having a second intensity that is lower than the first intensity. The reading module is configured to receive at least one return signal comprising reflections of the pulsed signal from the at least one sensor, to read one of the first component or the second component, and to provide frequency information based on the read reflections. The determination module is configured to determine at least one resonant frequency of the at least one sensor based on the frequency information.

Systems And Methods For Distributed Pressure Sensing

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US Patent:
20150268117, Sep 24, 2015
Filed:
Mar 24, 2014
Appl. No.:
14/222757
Inventors:
- Schenectady NY, US
Glen Peter Koste - Niskayuna NY, US
Sachin Narahari Dekate - Niskayuna NY, US
Sabarni Palit - Guilderland NY, US
Assignee:
GENERAL ELECTRIC COMPANY - Schenectady NY
International Classification:
G01L 11/02
E21B 47/06
Abstract:
A pressure sensing cable in one embodiment includes a polarization maintaining (PM) optic fiber having a length; and a Fiber Bragg Grating (FBG) pair formed in the PM optic fiber. The FBG pair includes a first FBG formed at a location along the length of the optic fiber. The first FBG defines a first wavelength range at which the first FBG is reflective. The FBG pair also includes a second FBG spaced a distance from the first FBG to define a FBG cavity extending between the first FBG and the second FBG. The second FBG defines a second wavelength range at which the second FBG is reflective. The first wavelength range of the first FBG and the second wavelength range of the second FBG at least partially overlap.
Sabarni C Palit from Newark, CA, age ~46 Get Report