US Patent:
20210149001, May 20, 2021
Inventors:
- Arlington VA, US
- Pittsburgh PA, US
Margo Staruch - Alexandria VA, US
Konrad Bussmann - Alexandria VA, US
Jeffrey W. Baldwin - Fairfax VA, US
Bernard R. Matis - Alexandria VA, US
Ronald Lacomb - West Greenwich RI, US
William Zappone - West Greenwich RI, US
Julie Lacomb - West Greenwich RI, US
Meredith Metzler - Havertown PA, US
Norman Gottron - Pittsburgh PA, US
International Classification:
G01R 33/09
H01L 43/08
B82Y 25/00
H01L 41/113
H01L 41/47
H01L 43/12
H01L 41/29
Abstract:
A high-sensitivity and ultra-low power consumption magnetic sensor using a magnetoelectric (ME) composite comprising of magnetostrictive and piezoelectric layers. This sensor exploits the magnetically driven resonance shift of a free-standing magnetoelectric micro-beam resonator. Also disclosed is the related method for making the magnetic sensor.