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Roland F Radius

from Goffstown, NH
Age ~64
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Also known as:
Roland M Radius
Phone and address:
28 Apple Tree Dr, Goffstown, NH 03045
(603) 497-3207
Connected to:
Andrijana Radivojevic, 41Dejan Radivojevic, 42Predrag Radivojac, 54Slavica M Radivojevic, 63Vladimir R Radivojevic, 53Ottis A Radix, 57Pauline V Radix, 83Shelton N Radix, 54Aleksandra Radjenovic, 39Ned Radjenovich, 70

Roland Radius Phones & Addresses

  • 28 Apple Tree Dr, Goffstown, NH 03045 (603) 497-3207
  • 28B Apple Tree Dr, Goffstown, NH 03045 (603) 497-3207
  • Merrimack, NH
  • 313 Cedar Ln, Williston, VT 05495 (802) 872-9523
  • 27 Read Rd, Williston, VT 05495 (802) 872-9523
  • 314 Town View Dr, Wappingers Falls, NY 12590 (845) 838-0801 (845) 838-6795

Work

Company: Allegro microsystems, llc Position: Principal product engineer at allegro microsystems, inc

Skills

Radius • Semiconductors

Languages

German

Industries

Semiconductors

Resumes

Resumes

Roland Radius Photo 1

Principal Product Engineer At Allegro Microsystems, Inc

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Location:
Worcester, MA
Industry:
Semiconductors
Work:
Allegro Microsystems, Llc
Principal Product Engineer at Allegro Microsystems, Inc
Skills:
Radius
Semiconductors
Languages:
German

Publications

Us Patents

Layout And Wiring Scheme For Memory Cells With Vertical Transistors

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US Patent:
62186965, Apr 17, 2001
Filed:
Jun 7, 1999
Appl. No.:
9/326889
Inventors:
Roland Radius - Wappingers Falls NY
Assignee:
Infineon Technologies North America Corp.
International Classification:
H01L 27108
US Classification:
257302
Abstract:
A memory device having vertical transistors in accordance with the present invention includes an active area pad isolated from adjacent active area pads on all sides and having a set of trench capacitors associated therewith. The set of trench capacitors are coupled to the active area pad through vertical transistors. The active area pad is configured to connect the set of trench capacitors to a first contact. A gate conductor pad is disposed between a set of active area pads and adapted to activate at least one vertical transistor in each active area pad adjacent to the gate conductor pad. Each gate conductor pad is activated by a second contact such that when the gate conductor pad is activated through the second contact the at least one vertical transistor in each active area pad conducts to provide access to the trench capacitors and transfers a state between the first contact and the trench capacitors.
Control profile
Roland F Radius from Goffstown, NH, age ~64 Get Report