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Robert Nahory Phones & Addresses

  • 30 Braeburn Dr, Lincroft, NJ 07738 (732) 842-1817
  • Cloverdale Ave, Los Angeles, CA 90001
  • 4845 Saturn St APT 5, Los Angeles, CA 90019
  • Califa St, Van Nuys, CA 91401
  • Long Branch, NJ
  • 30 Braeburn Dr, Lincroft, NJ 07738 (732) 616-2795

Work

Position: Retired

Education

Degree: Associate degree or higher

Emails

r***y@hotmail.com

Resumes

Resumes

Robert Nahory Photo 1

Digital Applications Developer

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Location:
4845 Saturn St, Los Angeles, CA 90019
Industry:
Higher Education
Work:
Rutgers University
Digital Applications Developer

Telcordia Technologies 1982 - Dec 1996
District Manager

Nokia Bell Labs 1981 - 1982
Supervisor-Avalanche Photodiodes
Education:
Purdue University
Doctorates, Doctor of Philosophy, Physics, Philosophy
Carnegie Mellon University
Bachelors, Bachelor of Science, Physics
Skills:
Solid State Physics
Over 150 Peer Reviewed Publications on Physics Research
Videoconferencing For Science Education
Research
Community Outreach
Materials Science
Higher Education
Semiconductors
Teaching
Public Speaking
Physics
Mathematica
Editing
Medical Devices
Grant Writing
Materials
Robert Nahory Photo 2

Digital Applications Developer At Rutgers University

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Position:
Digital Applications Developer at Rutgers University
Location:
Greater New York City Area
Industry:
Higher Education
Work:
Rutgers University
Digital Applications Developer

Publications

Us Patents

Growth Of Iii-V Layers Containing Arsenic, Antimony And Phosphorus, And Device Uses

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US Patent:
40329518, Jun 28, 1977
Filed:
Apr 13, 1976
Appl. No.:
5/676556
Inventors:
John Christian De Winter - Howell Township, Monmouth County NJ
Robert Edward Nahory - Lincroft NJ
Martin Alan Pollack - Westfield NJ
Assignee:
Bell Telephone Laboratories, Incorporated - Murray Hill NJ
International Classification:
H01L 3300
US Classification:
357 17
Abstract:
Gallium arsenide antimonide phosphide (GaAsSbP) has been successfully grown on a gallium arsenide substrate by liquid phase epitaxy. A critical amount of phosphorus initially in growth solution is depleted with consequent grading of lattice constant and bandgap in the epitaxially grown layer. The substrate and graded layer as a subassembly are well suited for use in electronic devices such as double heterostructure lasers, light-emitting diodes, Schottky barrier diodes, and p-n junction photodiodes in the near-infrared low loss region of optical fibers.

Semiconductor Heterostructure Having A Capping Layer Preventing Deleterious Effects Of As-P Exchange

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US Patent:
53028473, Apr 12, 1994
Filed:
Jun 4, 1993
Appl. No.:
8/072634
Inventors:
Rajaram Bhat - Red Bank NJ
Maria J. S. P. Brasil - Red Bank NJ
Robert E. Nahory - Lincroft NJ
William E. Quinn - Boulder CO
Maria C. Tamargo - Plainfield NJ
Assignee:
Bell Communications Research, Inc. - Livingston NJ
International Classification:
H01L 2920
US Classification:
257615
Abstract:
A III-V semiconductor heterojunction in which a capping layer (14) is formed between the two layers (10, 16) of the heterojunction to prevent any deleterious effects due to As-P exchange. When InAlAs is grown on InP, the capping layer is AlP. When GaAs is grown on GaInP, the capping layer is GaP.

Growth And Operation Of A Step-Graded Ternary Iii-V Heterojunction P-N Diode Photodetector

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US Patent:
39953033, Nov 30, 1976
Filed:
Jun 5, 1975
Appl. No.:
5/583964
Inventors:
Robert Edward Nahory - Middletown NJ
Thomas Perine Pearsall - Navesink NJ
Martin Alan Pollack - Westfield NJ
Assignee:
Bell Telephone Laboratories, Incorporated - Murray Hill NJ
International Classification:
H01L 2714
H01L 29164
US Classification:
357 30
Abstract:
In an infrared photodetection apparatus a photodetector diode is used which comprises a heterojunction of two epitaxial layers of differing compositions of a ternary III-V semiconductive alloy, such that the outer layer will serve as a radiation-admitting window as well as physical protection for the underlying absorbing layer in the so called direct photodetector diode configuration. The ternary alloy illustratively includes two metallic group III elements such as indium and gallium; but the principle can be extended to ternary alloys including two group V elements, such as arsenic and antimony. Further, quaternary alloys of III-V elements can be employed. The absorbing layer is selected to be substantially intrinsic. The latter is the case for an N-type layer of In. sub. x Ga. sub. (1. sub. -x) As. Matching of this absorbing layer to a gallium arsenide substrate is achieved by a plurality of step-graded composition layers of indium gallium arsenide.

Growth Of Iii-V Layers Containing Arsenic, Antimony And Phosphorus

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US Patent:
40725448, Feb 7, 1978
Filed:
Mar 29, 1977
Appl. No.:
5/782354
Inventors:
John C. DeWinter - Howell Township, Monmouth County NJ
Robert E. Nahory - Lincroft NJ
Martin A. Pollack - Westfield NJ
Assignee:
Bell Telephone Laboratories, Incorporated - Murray Hill NJ
International Classification:
H01L 21208
US Classification:
148171
Abstract:
Gallium arsenide antimonide phosphide (GaAsSbP) has been successfully grown on a gallium arsenide substrate by liquid phase epitaxy. A critical amount of phosphorus initially in growth solution is depleted with consequent grading of lattice constant and bandgap in the epitaxially grown layer. The substrate and graded layer as a subassembly are well suited for use in electronic devices such as double heterostructure lasers, light-emitting diodes, Schottky barrier diodes, and p-n junction photodiodes in the near-infrared low loss region of optical fibers.

Low Noise Multistage Avalanche Photodetector

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US Patent:
42031249, May 13, 1980
Filed:
Oct 6, 1978
Appl. No.:
5/949057
Inventors:
James P. Gordon - Rumson NJ
Robert E. Nahory - Lincroft NJ
Martin A. Pollack - Westfield NJ
John M. Worlock - Fair Haven NJ
Assignee:
Bell Telephone Laboratories, Incorporated - Murray Hill NJ
International Classification:
H01L 2990
US Classification:
357 13
Abstract:
Devices constructed according to the present invention provide low noise avalanche photodetectors. The devices are comprised of a sequence of at least four layers of semiconductor material of alternating opposed conductivity. In a first embodiment the layers form alternating homojunctions and heterojunctions at the interface between adjacent layers, and the bandgap of the layers on either side of the homojunctions decreases in the direction of the propagating signal. In another embodiment the layers form heterojunctions at the interfaces between adjacent layers; the layers are grouped into a sequence of pairs of layers where the bandgap of the two layers in each pair are substantially equal; and the bandgap of the layers in the sequence of pairs of layers decreases in the direction of the propagating signal. The effect of the structure of the multilayer device is to create traps for one sign of carrier and to prevent the trapped carrier from avalanching through amplification regions of the device.

Capping Layer Preventing Deleterious Effects Of As--P Exchange

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US Patent:
52468780, Sep 21, 1993
Filed:
Mar 27, 1992
Appl. No.:
7/859120
Inventors:
Rajaram Bhat - Red Bank NJ
Maria J. S. P. Brasil - Red Bank NJ
Robert E. Nahory - Lincroft NJ
William E. Quinn - Boulder CO
Maria C. Tamargo - Plainfield NJ
Assignee:
Bell Communications Research, Inc. - Livingston NJ
International Classification:
H01L 2120
US Classification:
437133
Abstract:
A III-V semiconductor heterojunction in which a capping layer (14) is formed between the two layers (10, 16) of the heterojunction to prevent any deleterious effects due to As--P exchange. When InAlAs is grown on InP, the capping layer is AlP. When GaAs is grown on GaInP, the capping layer is GaP.

Method Of Growing Oxide Layer On Indium Gallium Arsenide

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US Patent:
43748678, Feb 22, 1983
Filed:
Nov 6, 1981
Appl. No.:
6/318803
Inventors:
Robert E. Nahory - Lincroft NJ
Benjamin Tell - Aberdeen NJ
Assignee:
Bell Telephone Laboratories, Incorporated - Murray Hill NJ
International Classification:
B05D 314
B05D 512
B05D 724
US Classification:
427 38
Abstract:
A method of growing a water insoluble native plasma oxide on an In. sub. 53 Ga. sub. 47 As layer of the type that is useful in the fabrication of MOS type devices is disclosed. Oxygen is bubbled through a water chamber in order to introduce water vapor into the growth chamber during the growing process. The InGaAs layer is first sputter etched in the oxygen plasma while a negative potential is applied to the semiconductor structure. The pressure is then increased and the oxides are grown while a positive potential is applied to the semiconductor structure.

Isbn (Books And Publications)

Lasers : Harnessing the Atom's Light

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Author

Robert E. Nahory

ISBN #

0716750813

Robert E Nahory from Lincroft, NJ Get Report