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Richard D Weale

from Owego, NY
Age ~65
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Also known as:
Richard D Wheale
Phone and address:
1977 State Route 17C, Flemingville, NY 13827
(607) 687-9926
Related to:
Daniel M Weale, 55Denise L Agnello, 57Roko Peros, 39Carol L Weale, 64Roko Peros, 40Andrea Peros, 39Andrea M Peros, 39Adam R Weale, 29
Connected to:
Carol A Weale, 85Gretchen M Wean, 51Robert E Wean, 56Kristin L Weand, 46Bradley W Weaner, 43David Weanie, 68Brittany Weans, 38Autumn R Weant, 43Danica L Weappa, 47Angel A Wear, 74

Richard Weale Phones & Addresses

  • 1977 State Route 17C, Owego, NY 13827 (607) 687-9926
  • 1977 State Route 17C APT 17C, Owego, NY 13827
  • 113 Orchard Ave, Owego, NY 13827 (607) 687-5230
  • Oswego, NY
  • Waverly, NY
  • 1977 State Route 17C, Owego, NY 13827

Work

Company: Lockheed martin Aug 2017 Position: Product quality enginneer

Education

Degree: Bachelors, Bachelor of Arts School / High School: Alfred University Specialities: Engineering

Skills

Manufacturing Engineering • Team Leadership • Configuration Management • Capa • Process Change Management • As9100 Fai • Auditor • Quality Systems • Root Cause Analysis • As9100 • Spc • Quality System • Quality Assurance • Quality Control • Six Sigma • Semiconductors • Minitab • Fmea • Electronics • Engineering • Iso • Dmaic • Process Capability • Cqe • Lean Manufacturing • Manufacturing • 5S • Product Development • Value Stream Mapping • Process Improvement • Failure Analysis • Kaizen • Design of Experiments • Continuous Improvement • Pcb Design • Testing • Materials • Process Control • Process Simulation • Process Engineering • Materials Science • Supplier Quality • Quality Management • Design For Manufacturing • Iso 9000 • Electronics Manufacturing • Engineering Management • Green Belt

Industries

Electrical/Electronic Manufacturing

Resumes

Resumes

Richard Weale Photo 1

Product Quality Enginneer

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Location:
Owego, NY
Industry:
Electrical/Electronic Manufacturing
Work:
Lockheed Martin
Product Quality Enginneer
Pall Corporation Dec 1, 2013 - Jul 2017
Senior Customer Quality Engineer
Endicott Interconnect Technologies, Inc. Mar 2004 - Jan 2013
Quality Engineer
Ibm & Endicott Interconnect Technologies Nov 1998 - Mar 2004
Lead Coating Engineer
Ibm 1995 - 1998
Manufacturing Engineer Flex Circuits Roll Line
Education:
Alfred University
Bachelors, Bachelor of Arts, Engineering
Skills:
Manufacturing Engineering
Team Leadership
Configuration Management
Capa
Process Change Management
As9100 Fai
Auditor
Quality Systems
Root Cause Analysis
As9100
Spc
Quality System
Quality Assurance
Quality Control
Six Sigma
Semiconductors
Minitab
Fmea
Electronics
Engineering
Iso
Dmaic
Process Capability
Cqe
Lean Manufacturing
Manufacturing
5S
Product Development
Value Stream Mapping
Process Improvement
Failure Analysis
Kaizen
Design of Experiments
Continuous Improvement
Pcb Design
Testing
Materials
Process Control
Process Simulation
Process Engineering
Materials Science
Supplier Quality
Quality Management
Design For Manufacturing
Iso 9000
Electronics Manufacturing
Engineering Management
Green Belt

Publications

Us Patents

Method For Metallizing Through Holes In Thin Film Substrates, And Resulting Devices

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US Patent:
52885410, Feb 22, 1994
Filed:
Oct 17, 1991
Appl. No.:
7/779411
Inventors:
Kim J. Blackwell - Owego NY
Pei C. Chen - Endicott NY
Stephen E. Deliman - Endicott NY
Allan R. Knoll - Endicott NY
George J. Matarese - Bradenton FL
Richard D. Weale - Owego NY
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
B32B 900
US Classification:
428209
Abstract:
A method for vapor phase depositing a thin seed layer of, for example, chromium and copper onto the side walls of through holes in thin film substrates of, for example, polyimide is disclosed. This method is useful in fabricating devices such as a thin film semiconductor chip carrier in which a semiconductor chip mounted on one major surface of the chip carrier is electrically connected to a ground plane and/or a power conductor on the other major surface of the chip carrier via one or more metallized through holes.

Process For Coating A Substrate With Metallic Layer

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US Patent:
62354116, May 22, 2001
Filed:
Jun 28, 1994
Appl. No.:
8/266783
Inventors:
Kim Joseph Blackwell - Owego NY
Pei Cheh Chen - Endwell NY
Allan Robert Knoll - Endicott NY
Luis Jesus Matienzo - Endicott NY
Richard Dean Weale - Owego NY
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
C23C 1434
B32B 1508
US Classification:
428666
Abstract:
A metallic layer is coated onto a polyimide substrate by sputtering a layer of chromium followed by a layer of copper whereby the rate of deposition of the chromium is about 4 angstroms/second or less.

Method For Metallizing Through Holes In Thin Film Substrates, And Resulting Devices

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US Patent:
55253695, Jun 11, 1996
Filed:
Nov 16, 1993
Appl. No.:
8/152512
Inventors:
Kim J. Blackwell - Owego NY
Pei C. Chen - Endicott NY
Stephen E. Deliman - Endicott NY
Allan R. Knoll - Endicott NY
George J. Matarese - Bradenton FL
Richard D. Weale - Owego NY
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
B05D 512
B05D 312
US Classification:
427171
Abstract:
A method for vapor phase depositing a thin seed layer of, for example, chromium and copper onto the side walls of through holes in thin film substrates of, for example, polyimide is disclosed. This method is useful in fabricating devices such as a thin film semiconductor chip carrier in which a semiconductor chip mounted on one major surface of the chip carrier is electrically connected to a ground plane and/or a power conductor on the other major surface of the chip carrier via one or more metallized through holes.

Method Of Forming A Microelectronic Package Having A Copper Substrate

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US Patent:
51280086, Jul 7, 1992
Filed:
Apr 10, 1991
Appl. No.:
7/682994
Inventors:
Pei C. Chen - Endicott NY
Richard D. Weale - Owego NY
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
C23C 1434
US Classification:
20419215
Abstract:
Disclosed is a method of fabricating a microelectronic package having least one layer formed of a copper surface core, e. g. , a copper-Invar-copper core, with a polymeric dielectric film. The method includes removing copper oxide from the copper surface of the metallic core or layer. After this step an adhesion layer, such as a chromium layer, a nickel layer, or chromium and nickel or chromium and copper bilayers, is sputter deposited onto the copper surface of metallic core or layer. A polymeric dielectric film is then applied atop the metallic adhesion layer.
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Richard D Weale from Owego, NY, age ~65 Get Report