Richard T Ho

6762706, Jul 13, 2004

Jun 12, 2002

10/171005

Edison Fong - Sunnyvale CA
Richard M. Ho - San Jose CA

Freescale Semiconductor, Inc. - Austin TX

H03M 112

341155, 341167, 341166, 341161

A reduced power analog-to-digital (A/D) converter is disclosed herein. Reference current to an op-amp used in an A/D converter is reduced during later conversion cycles in an A/D conversion process. The reference current to the op-amp can be reduced without sacrificing overall accuracy of the output of the analog-to-digital converter, even though reducing the current to the op-amp reduces the accuracy of the op-amp. This is possible because the op-amp only needs to operate at maximum accuracy during the first conversion cycle, and can operate at reduced levels of accuracy during later conversion cycles.

20130129940, May 23, 2013

May 17, 2012

13/474076

Manchao Xiao - San Diego CA, US
Xinjian Lei - Vista CA, US
Bing Han - Beijing, CN
Mark Leonard O'Neill - San Marcos CA, US
Ronald Martin Pearlstein - San Marcos CA, US
Richard Ho - Anaheim CA, US
Haripin Chandra - Carlsbad CA, US
Agnes Derecskei-Kovacs - Macungie PA, US

AIR PRODUCTS AND CHEMICALS, INC. - Allentown PA

C07F 7/02

427578, 556410, 546 14, 548406, 544 69, 556412, 544229, 10628711, 42725528

Described herein are organoaminosilane precursors which can be used to deposit silicon containing films which contain silicon and methods for making these precursors. Also disclosed herein are deposition methods for making silicon-containing films or silicon containing films using the organoaminosilane precursors described herein. Also disclosed herein are the vessels that comprise the organoaminosilane precursors or a composition thereof that can be used, for example, to deliver the precursor to a reactor in order to deposit a silicon-containing film.

20130243968, Sep 19, 2013

Mar 12, 2013

13/795636

Ronald Martin Pearlstein - San Marcos CA, US
Agnes Derecskei-Kovacs - Macungie PA, US
Xinjian Lei - Vista CA, US
Richard Ho - Anaheim CA, US
Mark Leonard O'Neill - San Marcos CA, US
Daniel P. Spence - Carlsbad CA, US
Steven Gerard Mayorga - Oceanside CA, US

AIR PRODUCTS AND CHEMICALS, INC. - Allentown PA

C09D 5/00

427535, 42725528, 427553, 427551, 10628716, 10628714

A formulation comprising a first organosilane precursor and a halogenation reagent wherein at least a portion or all of the halogenation reagent reacts to provide the second organosilane precursor. Methods of generating such formulation in situ from readily available pure materials are also provided. Further provided are methods of using the formulations as the precursor for a flowable vapor deposition process.

54641292, Nov 7, 1995

May 27, 1994

8/249337

Richard K. Ho - Honolulu HI

B67D 560

222377

An improved pump spray bottle comprising a container for holding liquid therein. A pump head is on the container. A dip tube is coupled to the pump head. A structure is within the container for completely removing all of the liquid from within the container through the dip tube and out of the pump head.

20220234903, Jul 28, 2022

May 21, 2020

17/613624

- TEMPE AZ, US
MANCHAO XIAO - SAN DIEGO CA, US
RICHARD HO - TEMPE AZ, US
XINJIAN LEI - VISTA CA, US

VERSUM MATERIALS US, LLC - TEMPE AZ

C01B 33/12
C07F 7/10
C07F 7/08
C09D 1/00
C23C 16/40
C23C 16/455
C23C 16/44

A composition comprises at least one a composition comprising at least one organosilicon compound which has two or more silicon atoms connected to either a carbon atom or a hydrocarbon moiety.

20210407793, Dec 30, 2021

Sep 8, 2021

17/469211

- Tempe AZ, US
MANCHAO XIAO - SAN DIEGO CA, US
XINJIAN LEI - VISTA CA, US
RICHARD HO - ANAHEIM CA, US
HARIPIN CHANDRA - SAN MARCOS CA, US
MATTHEW R. MACDONALD - LAGUNA NIGUEL CA, US
MEILIANG WANG - SAN MARCOS CA, US

VERSUM MATERIALS US, LLC - Tempe AZ

H01L 21/02
C07F 7/10
C23C 16/24
C23C 16/455
C09D 5/24

Described herein are precursors and methods for forming silicon-containing films. In one aspect, the precursor comprises a compound represented by one of following Formulae A through E below:In one particular embodiment, the organoaminosilane precursors are effective for a low temperature (e.g., 350 C. or less), atomic layer deposition (ALD) or plasma enhanced atomic layer deposition (PEALD) of a silicon-containing film. In addition, described herein is a composition comprising an organoaminosilane described herein wherein the organoaminosilane is substantially free of at least one selected from the amines, halides (e.g., Cl, F, I, Br), higher molecular weight species, and trace metals.

20200308416, Oct 1, 2020

Jun 15, 2020

16/902101

- Tempe AZ, US
Meiliang Wang - Carlsbad CA, US
Matthew R. MacDonald - Laguna Niguel CA, US
Richard Ho - Tempe AZ, US
Manchao Xiao - San Diego CA, US
Suresh Kalpatu Rajaraman - San Marcos CA, US

Versum Materials US, LLC - Tempe AZ

C09D 1/00
C01B 33/12
C07F 7/02
C07F 7/10
C23C 16/40
C23C 16/455

Described herein are compositions and methods for forming silicon oxide films. In one aspect, the film is deposited from at least one silicon precursor compound, wherein the at least one silicon precursor compound is selected from the following Formulae A and B:as defined herein.

20200051811, Feb 13, 2020

Sep 24, 2019

16/580782

- Tempe AZ, US
Manchao Xiao - San Diego CA, US
Xinjian Lei - Vista CA, US
Richard Ho - Anaheim CA, US
Haripin Chandra - San Marcos CA, US
Matthew R. MacDonald - Laguna Niguel CA, US
Meiliang Wang - San Marcos CA, US

Versum Materials US, LLC - Tempe AZ

H01L 21/02
C09D 5/24
C23C 16/24
C07F 7/10

Described herein are precursors and methods for forming silicon-containing films. In one aspect, the precursor comprises a compound represented by one of following Formulae A through E below:In one particular embodiment, the organoaminosilane precursors are effective for a low temperature (e.g., 350 C. or less), atomic layer deposition (ALD) or plasma enhanced atomic layer deposition (PEALD) of a silicon-containing film. In addition, described herein is a composition comprising an organoaminosilane described herein wherein the organoaminosilane is substantially free of at least one selected from the amines, halides (e.g., Cl, F, I, Br), higher molecular weight species, and trace metals.