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Rajshree R Kothari

from Aurora, IL
Age ~57
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Also known as:
Rajshree K Kothari
Related to:
Meera K Bumb, 75Manu Bumb, 46Lokendra S KothariLalit Kothari, 59Rishabh Kothari
Connected to:
Abhineet Kothari, 49Anai N Kothari, 38Anjana K Kothari, 63Ankit Kothari, 35Anurag Kothari, 45Aruna J Kothari, 76Bharti H Kothari, 69Bhavin B Kothari, 40Dakshesh R Kothari, 48Danesh K Kothari, 41

Rajshree Kothari Phones & Addresses

  • Aurora, IL
  • Naperville, IL
  • 744 Edinburgh Ct, Barrington, IL 60010
  • Inverness, IL
  • 2515 Red Cedar Ln, Boise, ID 83716 (208) 424-6812
  • Potsdam, NY

Work

Company: Cabot microelectronics Jan 1, 2008 Position: Senior cmp engineer

Education

Degree: Master of Science, Masters School / High School: Clarkson University;Ms, Chemistry, 1998;; Specialities: Chemistry

Skills

Semiconductors • Microelectronics

Industries

Semiconductors

Resumes

Resumes

Rajshree Kothari Photo 1

Senior Cmp Engineer

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Location:
75 Market St, Potsdam, NY 13676
Industry:
Semiconductors
Work:
Cabot Microelectronics
Senior Cmp Engineer
Micron Technology 2004 - 2007
Cmp Development Engineer
Micron Technology 2003 - 2004
Metrology Coordinator
Micron Technology 2002 - 2003
Pilot Line Process Engineer
Micron Technology 2000 - 2002
Chemist
Education:
Clarkson University;Ms, Chemistry, 1998;;
Master of Science, Masters, Chemistry Clarkson University
Master of Science, Masters, Chemistry
Skills:
Semiconductors
Microelectronics

Publications

Us Patents

Methods And Tools For Controlling The Removal Of Material From Microfeature Workpieces

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US Patent:
7988529, Aug 2, 2011
Filed:
Mar 25, 2009
Appl. No.:
12/410984
Inventors:
Nagasubramaniyan Chandrasekaran - Boise ID, US
Rajshree Kothari - Boise ID, US
Gundu M. Sabde - Boise ID, US
James J. Hofmann - Boise ID, US
Assignee:
Micron Technology, Inc. - Boise ID
International Classification:
B24B 7/22
B24B 49/12
US Classification:
451 6, 451 41
Abstract:
Methods and apparatus for controlling the removal of material from microfeature workpieces in abrasive removal processes. An embodiment of such a method comprises irradiating a periodic structure of the workpiece and obtaining an intensity distribution of radiation returning from the periodic structure. The workpiece can be irradiated with a wide spectrum of wavelengths (e. g. , white light), or the workpiece can be irradiated with a laser or lamp at specific wavelengths. The intensity distribution can be an image or other signal from which a dimension or other physical parameter of the periodic structure can be determined. For example, the intensity distribution can be an intensity signal of radiation returning from the workpiece in a selected bandwidth (e. g. , 200 nm-900 nm) or an image of a diffraction pattern of radiation that has been scattered by the periodic structure. The method further includes outputting a control signal based on the obtained intensity distribution.

Methods And Tools For Controlling The Removal Of Material From Microfeature Workpieces

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US Patent:
20080051007, Feb 28, 2008
Filed:
Aug 28, 2006
Appl. No.:
11/511689
Inventors:
Nagasubramaniyan Chandrasekaran - Boise ID, US
Rajshree Kothari - Boise ID, US
Gundu M. Sabde - Boise ID, US
James J. Hofmann - Boise ID, US
Assignee:
Micron Technology, Inc. - Boise ID
International Classification:
B24B 51/00
B24B 7/30
US Classification:
451 5, 451 41
Abstract:
Methods and apparatus for controlling the removal of material from microfeature workpieces in abrasive removal processes. An embodiment of such a method comprises irradiating a periodic structure of the workpiece and obtaining an intensity distribution of radiation returning from the periodic structure. The workpiece can be irradiated with a wide spectrum of wavelengths (e.g., white light), or the workpiece can be irradiated with a laser or lamp at specific wavelengths. The intensity distribution can be an image or other signal from which a dimension or other physical parameter of the periodic structure can be determined. For example, the intensity distribution can be an intensity signal of radiation returning from the workpiece in a selected bandwidth (e.g., 200 nm-900 nm) or an image of a diffraction pattern of radiation that has been scattered by the periodic structure. The method further includes outputting a control signal based on the obtained intensity distribution. For example, the control signal can be an endpoint signal indicating the actual endpoint of the abrasive removal process.
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Rajshree R Kothari from Aurora, IL, age ~57 Get Report