Resumes
Resumes
Rahul Panat Phones & Addresses
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Sewickley, PA
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Phoenix, AZ
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Pittsburgh, PA
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Pullman, WA
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833 W Elgin St, Chandler, AZ 85225
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361 S Silverbrush Dr, Chandler, AZ 85226 (480) 899-6205
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3939 Windmills Blvd, Chandler, AZ 85226 (480) 899-6205
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Champaign, IL
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Maricopa, AZ
Work
Position:
Professional/Technical
Education
Degree:
High school graduate or higher
Publications
Us Patents
Nanolithographic Method Of Manufacturing An Embedded Passive Device For A Microelectronic Application, And Microelectronic Device Containing Same
View pageUS Patent:
20090231777, Sep 17, 2009
Filed:
Mar 12, 2008
Appl. No.:
12/047277
Inventors:
Nachiket R. Raravikar - Gilbert AZ, US
Rahul Panat - Chandler AZ, US
Rahul Panat - Chandler AZ, US
International Classification:
H01G 4/005
H01G 4/00
H01G 4/00
US Classification:
361271, 216 6
Abstract:
A method of manufacturing an embedded passive device for a microelectronic application comprises steps of providing a substrate (), nanolithographically forming a first section () of the embedded passive device over the substrate, and nanolithographically forming subsequent sections () the embedded passive device adjacent to the first section. The resulting embedded passive device may contain features less than approximately 100 nm in size.
Nanolithographic Method Of Manufacturing An Embedded Passive Device For A Microelectronic Application, And Microelectronic Device Containing Same
View pageUS Patent:
20120050940, Mar 1, 2012
Filed:
Nov 9, 2011
Appl. No.:
13/292235
Inventors:
Nachiket Raravikar - Gilbert AZ, US
Rahul Panat - Chandler AZ, US
Rahul Panat - Chandler AZ, US
International Classification:
H01G 4/06
US Classification:
361311
Abstract:
A method of manufacturing an embedded passive device for a microelectronic application comprises steps of providing a substrate (), nanolithographically forming a first section () of the embedded passive device over the substrate, and nanolithographically forming subsequent sections () the embedded passive device adjacent to the first section. The resulting embedded passive device may contain features less than approximately 100 nm in size.
Nanowire-Mesh Templated Growth Of Out-Of-Plane Three-Dimensional Fuzzy Graphene
View pageUS Patent:
20210139332, May 13, 2021
Filed:
Apr 17, 2018
Appl. No.:
16/606055
Inventors:
- Pittsburgh PA, US
Sahil Kumar Rastogi - Pittsburgh PA, US
Daniel J. San Roman - Pittsburgh PA, US
Rahul Panat - Pittsburgh PA, US
Sahil Kumar Rastogi - Pittsburgh PA, US
Daniel J. San Roman - Pittsburgh PA, US
Rahul Panat - Pittsburgh PA, US
Assignee:
CARNEGIE MELLON UNIVERSITY - Pittsburgh PA
International Classification:
C01B 32/186
B33Y 80/00
C23C 16/50
C23C 16/26
C23C 16/52
B33Y 80/00
C23C 16/50
C23C 16/26
C23C 16/52
Abstract:
Disclosed herein are methods of synthesizing a hybrid nanomaterial comprising 3D out-of-plane single- to few-layer fuzzy graphene on a scaffold, such as a Si nanowire mesh through a plasma-enhanced chemical vapor deposition process. By varying graphene growth conditions (CH4 partial pressure and process time), the size, density, and electrical properties of the hybrid nanomaterial can be controlled. Porous nanowire-templated 3D graphene hybrid nanomaterials exhibit high electrical conductivity and also demonstrate exceptional electrochemical functionality.
Low-Cost Fiber Optic Sensor For Large Strains
View pageUS Patent:
20160305771, Oct 20, 2016
Filed:
Apr 14, 2016
Appl. No.:
15/098891
Inventors:
Rahul Panat - Pullman WA, US
Lei Li - Pullman WA, US
Lei Li - Pullman WA, US
Assignee:
Washington State University - Pullman WA
International Classification:
G01B 11/16
G02B 6/02
G02B 6/02
Abstract:
A fiber grating device of low cost and arbitrary length is formed on a portion of a portion or the entirety of a highly elastic fiber optic core having a low Young's modulus of elasticity by causing elongation of the fiber optic core and forming or depositing a hard skin or cladding on the elongated fiber optic core. When the stress is then released, the hard skin or cladding buckles (including elastic or plastic deformation or both) to form wrinkles at the interface of the fiber optic core and the hard skin or cladding which are oriented circumferentially and highly uniform in height and spacing which can be varied at will by choice of materials, stretching, and thickness and composition of the cladding. Since the elastic elongation of the fiber optic core portion may be 200% or greater, an unprecedented measurement range is provided.
Additive Manufacturing Of Porous Scaffold Structures
View pageUS Patent:
20160167132, Jun 16, 2016
Filed:
Dec 3, 2015
Appl. No.:
14/957849
Inventors:
- Pullman WA, US
Rahul Panat - Pullman WA, US
Rahul Panat - Pullman WA, US
International Classification:
B22F 3/105
B28B 17/00
B28B 1/00
B28B 17/00
B28B 1/00
Abstract:
Techniques for additive deposition are disclosed herein. In one embodiment, a method includes depositing a first portion of a precursor material onto a deposition platform, the precursor material including a suspension of nano-particles and forming a first solid structure of the nano-particles on the deposition platform from the deposited first layer of the precursor material. The method can also include depositing a second portion of the precursor material onto the formed first solid structure of the nano-particles and forming a second solid structure on the first solid structure from the deposited second layer of the precursor material. The three dimensional structure thus formed can be partly or fully cured or sintered during deposition or after deposition resulting in a controlled hierarchical porosity at multiple levels, from mesoscale (e.g., about 10 μm to about 250 μm) to nanoscale (e.g., about 900 nm or less) in the same structure.
Highly Stretchable Interconnect Devices And Systems
View pageUS Patent:
20160170447, Jun 16, 2016
Filed:
Aug 29, 2015
Appl. No.:
14/839933
Inventors:
- Pullman WA, US
Rahul Panat - Pullman WA, US
Rahul Panat - Pullman WA, US
International Classification:
G06F 1/16
H05K 1/03
H05K 3/46
H05K 3/14
H05K 3/22
H05K 1/02
H05K 1/09
H05K 1/03
H05K 3/46
H05K 3/14
H05K 3/22
H05K 1/02
H05K 1/09
Abstract:
Techniques for forming highly stretchable electronic interconnect devices are disclosed herein. In one embodiment, a method of fabricating an electronic interconnect device includes forming a layer of an adhesion material onto a surface of a substrate material capable of elastic and/or plastic deformation. The formed layer of the adhesion material has a plurality of adhesion material portions separated from one another on the surface of the substrate material. The method also includes depositing a layer of an interconnect material onto the formed layer of the adhesion material. The deposited interconnect material has regions that are not bonded or loosely bonded to corresponding regions of the substrate material, such that the interconnect material may be deformed more than the adhesion material attached to the substrate material. In certain embodiments, the interconnect material can also include a plurality of wrinkles on a surface facing away from the substrate material.
Three Dimensional Sub-Mm Wavelength Sub-Thz Frequency Antennas On Flexible And Uv-Curable Dielectric Using Printed Electronic Metal Traces
View pageUS Patent:
20160172741, Jun 16, 2016
Filed:
Dec 10, 2015
Appl. No.:
14/964635
Inventors:
Rahul Panat - Pullman WA, US
Deuk Hyoun Heo - Pullman WA, US
Deuk Hyoun Heo - Pullman WA, US
Assignee:
Washington State University - Pullman WA
International Classification:
H01P 11/00
Abstract:
Novel methods for micro-additive manufacturing three dimensional sub-millimeter components are disclosed herein. The methods can include dispensing a dielectric at positions on a substrate so as to provide dielectric structures having an aspect ratio of up to 1:20. The methods can also include in-situ curing of the dielectric structure upon dispensing of the dielectric wherein the dispensing and curing steps provide for three dimensional configurations. Direct printing a metal nanoparticle solution on the dielectric to create conductive traces and thereafter sintering the printed nanoparticle solution so as to cure the conductive traces enables three dimensional conductive (antenna) elements having a length and width scale of down to 1 μm.