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Norman H Tolk

from Woodland Hills, UT
Age ~87
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Also known as:
Norman N Tolk, Norman Tolk Revocable Living
Related to:
Jennifer D Tolk, 56Cynthia V Richards, 76Howard D Clark, 55J T BentleyJeffrey S Tolk, 61Lisa H Tolk, 53Madeleine Anne TolkMarilyn N Tolk, 88Kirk Richards, 48Bentley J Tolk, 59David H Tolk, 55Roger S Tuminez
Connected to:
Elaine W Tolk, 81Louis L Tolka, 75Kevin Tolkan, 46Samantha J Tolken, 37Brian J Tolkin, 53Emma C Tolkin, 33Axel Tolksdorf, 55Michael J Tolksdorf, 72Alexander E Toll, 33Aron Toll, 95

Norman Tolk Phones & Addresses

  • Woodland Hills, UT
  • 913 Center Ridge Ct, Brentwood, TN 37027 (615) 373-4977 (615) 661-5566 (615) 430-9316
  • 314 Appomattox Dr, Brentwood, TN 37027 (615) 373-4977
  • Nashville, TN
  • New York, NY

Resumes

Resumes

Norman Tolk Photo 1

Professor Of Physics At Vanderbilt University

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Location:
913 Center Ridge Ct, Brentwood, TN 37027
Industry:
Research
Work:
Vanderbilt University
Professor of Physics at Vanderbilt University
Telcordia Technologies 1983 - 1984
Member Technical Staff
Nokia Bell Labs 1968 - 1983
Member Technical Staff
Education:
Columbia University In the City of New York 1960 - 1966
Doctorates, Doctor of Philosophy, Physics Harvard University 1956 - 1960
Bachelors, Bachelor of Arts, Physics
Languages:
English
Norman Tolk Photo 2

Professor Of Physics At Vanderbilt University

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Position:
Professor of Physics at Vanderbilt University
Location:
Greater Nashville Area
Industry:
Research
Work:
Vanderbilt University
Professor of Physics
Education:
Harvard University 1956 - 1960

Publications

Us Patents

Contactless Optical Probe For Use In Semiconductor Processing Metrology

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US Patent:
6856159, Feb 15, 2005
Filed:
Mar 15, 2000
Appl. No.:
10/363347
Inventors:
Norman H. Tolk - Brentwood TN, US
Gunter Leupke - Williamsburg VA, US
Wei Wang - Austin TX, US
Assignee:
Vanderbilt University - Nashville TN
International Classification:
G01R031/02
US Classification:
324765, 324752
Abstract:
A method and/or device () for determining first and second band offsets () at a semiconductor/dielectric heterointerface (), which includes the semiconductor/dielectric heterointerface () exposed to incident photons () from a light source (); a detector () for generating a signal by detecting emitted photons () from the semiconductor/dielectric heterointerface (); and an element () for changing the energy of incident photons () to monitor the first and second band offsets ().

Apparatus And Methods Of Using Second Harmonic Generation As A Non-Invasive Optical Probe For Interface Properties In Layered Structures

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US Patent:
7158284, Jan 2, 2007
Filed:
Dec 21, 2004
Appl. No.:
11/019906
Inventors:
Michael Lee Alles - Nashville TN, US
Norman H. Tolk - Brentwood TN, US
Bongim Jun - Nashville TN, US
Robert Pasternak - Nashville TN, US
Ron Schrimpf - Franklin TN, US
Sorin Cristoloveanu - Seyssinet-Pariset, FR
Assignee:
Vanderbilt University - Nashville TN
International Classification:
G02F 1/37
G01R 31/308
US Classification:
359328, 324752
Abstract:
A method for non-invasively probing at least one interface property in a layered structure having at least one interface. In one embodiment, the method includes the steps of exposing the layered structure to an incident photon beam at an incident angle to produce a reflection beam, measuring intensities of the second harmonic generation signals from the reflection beam, and identifying an initial second harmonic generation intensity and a time evolution of second harmonic generation intensity from the measured second harmonic generation intensities so as to determine the at least one interface property of the layered structure.

Method And Apparatus For Producing Neutral Atomic And Molecular Beams

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US Patent:
47757892, Oct 4, 1988
Filed:
Mar 19, 1986
Appl. No.:
6/841142
Inventors:
Royal G. Albridge - Nashville TN
Richard F. Haglund - Brentwood TN
Kenneth J. Snowdon - Nashville TN
Norman H. Tolk - Brentwood TN
International Classification:
H01J 3726
US Classification:
250251
Abstract:
A method and apparatus for producing a neutral beam of oxygen or other gas for use in testing of materials and for heavy particle etching is disclosed. A beam of positively ionized gas is accelerated and filtered to produce a beam having ions of a selected energy. The beam is decelerated to an energy of the level required and directed toward a photo emissive surface at a grazing incidence angle causing electrons to be contributed to the beam thereby neutralizing part of the ionized atoms and molecules of the beam. The beam is directed through electrostatic deflection plates which separate out remaining ionized particles producing a neutral beam.

Method And Apparatus For Surface Characterization And Process Control Utilizing Radiation From Desorbed Particles

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US Patent:
43933114, Jul 12, 1983
Filed:
May 21, 1982
Appl. No.:
6/380702
Inventors:
Leonard C. Feldman - Berkeley Heights NJ
Joseph S. Kraus - Stirling NJ
Norman H. Tolk - Mendham NJ
Morton M. Traum - Warren NJ
John C. Tully - Berkeley Heights NJ
Assignee:
Bell Telephone Laboratories, Incorporated - Murray Hill NJ
International Classification:
G01N 2322
H01J 3726
US Classification:
2504591
Abstract:
Emission of characteristic electromagnetic radiation in the infrared, visible, or UV from excited particles, typically ions, molecules, or neutral atoms, desorbed from solid surfaces by an incident beam of low-momentum probe radiation has been observed. Disclosed is a method for characterizing solid surfaces based on the observed effect, with low-momentum probe radiation consisting of electrons or photons. Further disclosed is a method for controlling manufacturing processes that is also based on the observed effect. The latter method can, for instance, be advantageously applied in integrated circuit-, integrated optics-, and magnetic bubble device manufacture. Specific examples of applications of the method are registering of masks, control of a direct-writing processing beam, end-point detection in etching, and control of a processing beam for laser- or electron-beam annealing or ion implantation.

Apparatus And Methods For Probing A Material As A Function Of Depth Using Depth-Dependent Second Harmonic Generation

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US Patent:
20170205377, Jul 20, 2017
Filed:
Jul 13, 2015
Appl. No.:
15/324100
Inventors:
- Nashiville TN, US
Halina Krzyzanowska - Nashville TN, US
Norman H. Tolk - Brentwood TN, US
International Classification:
G01N 29/24
G01N 29/44
G01N 29/04
Abstract:
A method for non-invasively probing at least one physics property of a solid material. In one embodiment, the method has the steps of splitting a photon beam into a first photon beam and a second photon beam, exposing the solid material to the first photon beam to generate a coherent acoustic phonon wave in the solid material at time t, and exposing the solid material to the second photon beam at a time t+Δt, where t+Δt≧t, to generate corresponding second harmonic generation signals, where from the corresponding second harmonic generation signals, the at least one physics property of the solid material is determinable.
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Norman H Tolk from Woodland Hills, UT, age ~87 Get Report