US Patent:
20040201101, Oct 14, 2004
Inventors:
Seung Kang - Macungie PA, US
Roland Krebs - Allentown PA, US
Kurt Steiner - Fogelsville PA, US
Michael Ayukawa - Zionsville PA, US
Sailesh Merchant - Breinigsville PA, US
International Classification:
H01L023/48
Abstract:
An integrated circuit device structure and a process for fabricating the structure wherein the power bus interconnect structure is formed in the aluminum pad or contact layer. An interconnect structure for interconnecting underlying levels of interconnect can also be formed in the aluminum pad layer.