Melvin Cook

43080782, Dec 29, 1981

Jun 6, 1980

6/156879

Melvin S. Cook - Saddle River NJ

H01L 21263

148 15

A method is disclosed for producing single-crystal semiconductor films. A thin layer of semiconductor single-crystal material is grown on a substrate having a lower melting point temperature than the layer material. The substrate and layer are heated in an oven to the melting point temperature of the substrate. Laser radiation of a wavelength absorbed by the layer is impinged on the layer, thereby generating heat in the layer and raising its temperature. Heat then flows to the substrate where it is absorbed, as is any transmitted radiation. Liquification of substrate material at the interface of the substrate with the layer results. Following such liquification, the layer is locally separated from the substrate. As the laser radiation is swept along the layer, the layer (film) is progressively removed from the substrate, until the film is entirely separated.

46330305, Dec 30, 1986

Aug 5, 1985

6/762200

Melvin S. Cook - Saddle River NJ

Holobeam, Inc. - Ridgewood NJ

H01L 3106
H01L 2502
H01L 2714

136246

A photovoltaic cell formed on a crystal substrate in which the lattice constant of the material of which the substrate is composed differs from the lattice constant of crystal material of which at least one component cell is composed. A lattice-graded bridging epilayer is formed over curved surface regions of the crystal substrate.

45978239, Jul 1, 1986

Sep 12, 1983

6/531230

Melvin S. Cook - Saddle River NJ

C30B 1902

156622

An apparatus and a method for growth of material on substrates. A substrate at temperature T. sub. 2 is placed with a surface in contact with solution in streamline flow through a narrow channel. The solution enters the channel with a temperature, T. sub. 1, which is above its saturation temperature, T. sub. s, T. sub. 2 is below T. sub. s, so material will deposit on the substrate surface. The flow of solution is maintained high enough to avoid the onset of constitutional supercooling.

43964567, Aug 2, 1983

Dec 21, 1981

6/332559

Melvin S. Cook - Saddle River NJ

C30B 3300

156602

A method is disclosed for peeling thin epitaxially grown crystalline layers (epilayers) from the substrates on which they have been grown. A thin layer of single-crystal is epitaxially grown on a substrate, where material at the interface of the epilayer and the substrate has a lower melting point temperature than does the epilayer. Heat is added to the lower melting point temperature material in order to liquify at least part of it. A voltage is applied between the epilayer and an adjacent structure in order to develop an electrical force on the epilayer to facilitate peeling of the epilayer away from the substrate.

39382664, Feb 17, 1976

Dec 13, 1973

5/424274

Melvin S. Cook - Saddle River NJ

Holobeam, Inc. - Paramus NJ

A43B 912
B32B 0000

36 195

An adhesive system is described as including an adhesive having dispersed metal particles whose function it is to emit heat for the purposes of breaking the bond formed by the adhesive when such action is desired. Specifically, metal particles are embedded within a suitable adhesive material which loses strength at a predetermined, relatively low temperature. When it is desired to break the bond formed by the adhesive, the metal-filled adhesive is placed in a rapidly varying magnetic or electromagnetic field so that the metallic inclusions transfer heat to the adhesive material, thereby raising it to a level which will break the bond formed thereby.

43459676, Aug 24, 1982

Mar 4, 1980

6/127114

Melvin S. Cook - Saddle River NJ

C30B 3300

156613

A method of producing thin single-crystal sheets is disclosed. A thin single-crystal layer is formed on a substrate, with the material of the layer having a different absorption coefficient for laser radiation than does the material of the substrate at their interface. The laser radiation is focused into a region contiguous to the interface and extending the width of the interface, and is swept across the entire interface region. The energy that is absorbed from the laser radiation in the focus region liquifies material in this region. The layer is progressively separated from the substrate as the laser radiation is swept across the interface, until the entire layer is separated from the substrate. The method is applicable to the production of thin single-crystal sheets of semiconductor material which may be used, for example, in the manufacture of solar cells or integrated circuits.

43034632, Dec 1, 1981

Sep 29, 1980

6/192063

Melvin S. Cook - Saddle River NJ

C30B 106

156603

A method is disclosed for peeling thin layers of crystal from the substrates on which they have been grown. A thin layer of single-crystal material is grown on a single-crystal substrate having a lower melting point temperature than the layer. The layer and substrate are then brought to the melting point temperature of the substrate material, and the layer is contacted to a hot object so that heat flows through the layer to the substrate for liquifying the substrate material contiguous to the layer. The layer is peeled from the substrate where such liquification has occurred.

45486581, Oct 22, 1985

Jan 30, 1985

6/696438

Melvin S. Cook - Saddle River NJ

H01L 2120
H01L 2926

148175

A method is disclosed for growing an epitaxial layer composed of semiconductor material belonging to the cubic crystal system on a substrate, where the lattice constant of the epitaxial layer is graded from an initial lattice constant adjacent to the substrate to a final lattice constant on the surface of the epitaxial layer. Growth surfaces are formed on the substrate, and the epitaxial layer is grown as its lattice constant changes from the initial lattice constant to the final lattice constant.