US Patent:
20070042601, Feb 22, 2007
Inventors:
Xikun Wang - Sunnyvale CA, US
Wei Liu - San Jose CA, US
Yan Du - Santa Clara CA, US
Mei Shen - Fremont CA, US
International Classification:
H01L 21/302
H01L 21/461
US Classification:
438689000, 438706000, 438707000, 438710000, 438712000, 438722000, 257E21214
Abstract:
In one implementation, a method is provided for etching a high k dielectric material in a plasma etch reactor, the method comprising plasma etching the high k dielectric material with a first plasma gas reactant mixture having BCl. The high k dielectric material may include AlOin a stack having a silicon layer. The etching may include supplying a passivation gas, for example CH, and may further include supplying a diluent gas such as a noble gas, for example He. In some implementations, the etching may be performed with a reactive ion etch process.