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Mehran Nasser-Ghodsi

from South Hamilton, MA
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Connected to:
Abeer S Nasser, 55Adeelah Nasser, 42Ahm M Nasser, 58Alaa Nasser, 46Amal M Nasser, 76Amani Nasser, 66Badrudduza B Nasser, 70Bana R Nasser, 49Belal C Nasser, 52Devon A Nasser, 42

Mehran Nasser-Ghodsi Phones & Addresses

  • 42 Boardman Ln, South Hamilton, MA 01982

Publications

Us Patents

Methods And Apparatus For Defect Localization

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US Patent:
6664541, Dec 16, 2003
Filed:
Nov 21, 2001
Appl. No.:
09/990170
Inventors:
Mehran Nasser-Ghodsi - Hamilton MA
Jeffrey Reichert - San Jose CA
Assignee:
KLA Tencor Technologies Corporation - Milpitas CA
International Classification:
H01J 3728
US Classification:
250310, 250306, 250307, 2504922, 2504911
Abstract:
The present invention includes a system for localization of defects in test samples. A sample is scanned using a particle beam. Some particles interact with conductive elements and may cause the emission of x-rays. Other particles can pass through the sample entirely and generate a current that can be measured. A higher current generated indicates less conductive material at the scan target that may mean a void, dishing, or erosion is present. Localization of a defect can be confirmed using an x-ray emission detector.

Methods And Apparatus For Electron Beam Inspection Of Samples

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US Patent:
6677586, Jan 13, 2004
Filed:
Oct 8, 2002
Appl. No.:
10/272468
Inventors:
Mehran Nasser-Ghodsi - Hamilton MA
Michael Cull - Wilmington MA
Assignee:
KLA -Tencor Technologies Corporation - Milpitas CA
International Classification:
G01N 23225
US Classification:
250310, 250306, 250307, 250311, 2504921, 2504922, 2504923
Abstract:
Methods and apparatus are providing for inspecting a test sample. An electron beam is tuned to cause secondary electron emissions upon scanning a target area. Reactive substances are introduced to etch and remove materials and impurities from the scan target. Residual components are evacuated. In one example, a laser is used to irradiate and area to assist in the removal of residual components with poor vapor pressure.

Methods And Apparatus For Void Characterization

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US Patent:
6801596, Oct 5, 2004
Filed:
Nov 21, 2001
Appl. No.:
09/990171
Inventors:
Mehran Nasser-Ghodsi - Hamilton MA
Anne Testoni - Marlborough MA
Steve Oestreich - Mesa AZ
Assignee:
KLA-Tencor Technologies Corporation - Milpitas CA
International Classification:
G01N 2306
US Classification:
378 53, 378 54, 378 57
Abstract:
The present invention provides a system for characterizing voids in test samples. An x-ray emission inducer scans a target such as a via on a test sample. A metallization or thin film layer emits x-rays as a result of the scan. The x-ray emission intensity can be measured and compared against a control measurement. The information obtained can be used to characterize a void in the scan target.

Methods And Apparatus For Dishing And Erosion Characterization

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US Patent:
6810105, Oct 26, 2004
Filed:
Sep 12, 2002
Appl. No.:
10/242496
Inventors:
Mehran Nasser-Ghodsi - Hamilton MA
Phil Wood - Litchfield NH
Assignee:
KLA-Tencor Technologies Corporation - Milpitas CA
International Classification:
G01N 23223
US Classification:
378 44, 250306
Abstract:
The present invention includes a system for efficient and effective detection and characterization of dishing and/or erosion. An x-ray emission inducer is used to scan a target on a sample. The target can be scanned at an acute incident angle to allow characterization of the dishing and/or erosion and analysis of the metallization or thin film layer topology.

Methods And Apparatus For Electron Beam Inspection Of Samples

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US Patent:
6943350, Sep 13, 2005
Filed:
Oct 8, 2002
Appl. No.:
10/272467
Inventors:
Mehran Nasser-Ghodsi - Hamilton MA, US
Michael Cull - Wilmington MA, US
Assignee:
KLA-Tencor Technologies Corporation - Milpitas CA
International Classification:
G01N023/225
C23C015/00
B68B003/12
H01L021/66
US Classification:
250310, 250306, 250307, 250311, 2504921, 2504922, 2504923
Abstract:
Methods and apparatus are providing for inspecting a test sample. An electron beam is tuned to cause secondary electron emissions upon scanning a target area. Reactive substances are introduced to etch and remove materials and impurities from the scan target. Residual components are evacuated. In one example, a laser is used to irradiate and area to assist in the removal of residual components with poor vapor pressure.

Integrated Electron Beam And Contaminant Removal System

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US Patent:
7078689, Jul 18, 2006
Filed:
Dec 17, 2004
Appl. No.:
11/016074
Inventors:
David L. Adler - San Jose CA, US
Mehran Nasser-Ghodsi - Hamilton MA, US
Assignee:
KLA-Tencor Technologies Corporation - Milpitas CA
International Classification:
H01J 37/30
H01L 21/66
US Classification:
250306, 250307, 250310, 250311, 250431, 2504431, 438 14
Abstract:
One embodiment disclosed relates to an integrated electron beam inspection and contaminant removal tool. An electron beam column is configured to image an area on a substrate being inspected. A contaminant removal subsystem is integrated with the electron beam column and configured to remove contamination from a surface of the substrate. Means is advantageously included by which the substrate is kept from being exposed to air between the contaminant removal subsystem and the electron beam column.

Methods And Systems For Preparing A Copper Containing Substrate For Analysis

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US Patent:
7148073, Dec 12, 2006
Filed:
Mar 15, 2005
Appl. No.:
11/082039
Inventors:
David Soltz - San Jose CA, US
Mehran Nasser-Ghodsi - Hamilton MA, US
Harold Winters - San Jose CA, US
John W. Coburn - San Jose CA, US
Alexander Gubbens - Redwood City CA, US
Gabor Toth - San Jose CA, US
Assignee:
KLA-Tencor Technologies Corp. - Milpitas CA
International Classification:
H01L 21/302
US Classification:
438 4, 438 8, 438 16, 438708, 438711, 438720, 216 66, 216 78
Abstract:
Methods and systems for preparing a substrate for analysis are provided. One method includes removing a portion of a copper structure on the substrate using an etch chemistry in combination with an electron beam. The etch chemistry is substantially inert with respect to the copper structure except in the presence of the electron beam. Other methods involve forming masking layers on a substrate that will protect the substrate during etching. For example, one method includes exposing a first portion of the substrate to an electron beam. A second portion of the substrate not exposed to the electron beam includes a copper structure. The method also includes exposing the substrate to a fluorine containing chemical. The fluorine containing chemical bonds to the first portion but not the second portion to form a fluorine containing layer on the first portion.

Methods And Systems For Measuring A Characteristic Of A Substrate Or Preparing A Substrate For Analysis

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US Patent:
7365321, Apr 29, 2008
Filed:
Mar 22, 2005
Appl. No.:
11/086048
Inventors:
Mehran Nasser-Ghodsi - Hamilton MA, US
Mark Borowicz - San Jose CA, US
Assignee:
KLA-Tencor Technologies Corp. - Milpitas CA
International Classification:
H01J 37/06
US Classification:
250310, 250306, 250307
Abstract:
Methods and systems for measuring a characteristic of a substrate or preparing a substrate for analysis are provided. One method for measuring a characteristic of a substrate includes removing a portion of a feature on the substrate using an electron beam to expose a cross-sectional profile of a remaining portion of the feature. The feature may be a photoresist feature. The method also includes measuring a characteristic of the cross-sectional profile. A method for preparing a substrate for analysis includes removing a portion of a material on the substrate proximate to a defect using chemical etching in combination with an electron beam. The defect may be a subsurface defect or a partially subsurface defect. Another method for preparing a substrate for analysis includes removing a portion of a material on a substrate proximate to a defect using chemical etching in combination with an electron beam and a light beam.
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Mehran Nasser-Ghodsi from South Hamilton, MA Get Report