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Mark M Hytros

from Chicago, IL
Age ~51
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Also known as:
Mark Matthew Hytros
Phone and address:
3310 N Claremont Ave, Chicago, IL 60618
Related to:
Thomas J Chace, 57Karen L Weaver, 76Scott Weaver, 66Michael Weaver, 60Jill Weaver, 64
Connected to:
Kellen J Hytry, 41Aaron M Hyttsten, 38Andy K Hyun, 60Ashley J Hyun, 30Bo R Hyun, 43Do Y Hyun, 84Hea Hyun, 47Jae Hyun, 48Jamie Hyun, 28Janet Hyun, 55

Mark Hytros Phones & Addresses

  • 3310 N Claremont Ave, Chicago, IL 60618
  • 777 Michigan St, Chicago, IL 60611 (312) 643-1568
  • 1717 W Newport Ave #5, Chicago, IL 60657
  • 310 Marcella Rd, Mount Prospect, IL 60056
  • Lake in the Hills, IL
  • 592 Mill Creek Ln, Santa Clara, CA 95054 (408) 855-8997
  • Lake in the Hills, IL
  • Cambridge, MA

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Mark Hytros

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Location:
Greater Chicago Area
Industry:
Financial Services
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Mark Hytros

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Publications

Us Patents

Apparatus And Method For Plasma Assisted Deposition

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US Patent:
6998014, Feb 14, 2006
Filed:
Jul 16, 2002
Appl. No.:
10/197940
Inventors:
Chen-An Chen - Milpitas CA, US
Avgerinos Gelatos - Redwood City CA, US
Michael X. Yang - Palo Alto CA, US
Ming Xi - Milpitas CA, US
Mark M. Hytros - Lake In The Hills IL, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
C23F 1/00
H01L 21/306
US Classification:
15634534, 15634533, 15634543, 15634544, 15634547, 118723 R, 118723 E, 118723 ER
Abstract:
Embodiments of the present invention relate to an apparatus and method of plasma assisted deposition by generation of a plasma adjacent a processing region. One embodiment of the apparatus comprises a substrate processing chamber including a top shower plate, a power source coupled to the top shower plate, a bottom shower plate, and an insulator disposed between the top shower plate and the bottom shower plate. In one aspect, the power source is adapted to selectively provide power to the top shower plate to generate a plasma from the gases between the top shower plate and the bottom shower plate. In another embodiment, a power source is coupled to the top shower plate and the bottom shower plate to generate a plasma between the bottom shower plate and the substrate support. One embodiment of the method comprises performing in a single chamber one or more of the processes including, but not limited to, cyclical layer deposition, combined cyclical layer deposition and plasma-enhanced chemical vapor deposition; plasma-enhanced chemical vapor deposition; and/or chemical vapor deposition.

Apparatus And Method For Plasma Assisted Deposition

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US Patent:
7779784, Aug 24, 2010
Filed:
Jun 6, 2005
Appl. No.:
11/146309
Inventors:
Chen-An Chen - Milpitas CA, US
Avgerinos Gelatos - Redwood City CA, US
Michael X. Yang - Palo Alto CA, US
Ming Xi - Milpitas CA, US
Mark M. Hytros - Lake In The Hills IL, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
C23C 16/00
C23F 1/00
H01L 21/306
US Classification:
118723E, 15634547
Abstract:
Embodiments of the present invention relate to an apparatus and method of plasma assisted deposition by generation of a plasma adjacent a processing region. One embodiment of the apparatus comprises a substrate processing chamber including a top shower plate, a power source coupled to the top shower plate, a bottom shower plate, and an insulator disposed between the top shower plate and the bottom shower plate. In one aspect, the power source is adapted to selectively provide power to the top shower plate to generate a plasma from the gases between the top shower plate and the bottom shower plate. In another embodiment, a power source is coupled to the top shower plate and the bottom shower plate to generate a plasma between the bottom shower plate and the substrate support. One embodiment of the method comprises performing in a single chamber one or more of the processes including, but not limited to, cyclical layer deposition, combined cyclical layer deposition and plasma-enhanced chemical vapor deposition; plasma-enhanced chemical vapor deposition; and/or chemical vapor deposition.

Dual-Gas Delivery System For Chemical Vapor Deposition Processes

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US Patent:
20030124842, Jul 3, 2003
Filed:
Dec 27, 2001
Appl. No.:
10/033544
Inventors:
Mark Hytros - Santa Clara CA, US
Truc Tran - Fremont CA, US
Salvador Umotoy - Antioch CA, US
Lawrence Lei - Milpitas CA, US
Avgerinos Gelatos - Redwood City CA, US
Tong Zhang - Palo Alto CA, US
Assignee:
APPLIED MATERIALS, INC.
International Classification:
C23F001/00
C23C016/00
H01L021/306
H01L021/44
US Classification:
438/680000, 156/345330, 118/715000
Abstract:
Embodiments of the present invention generally relate to an apparatus and method for delivering two separate gas flows to a processing region. One embodiment of a substrate processing chamber adapted to deliver two separate gas flows to a processing region comprises a substrate support having a substrate receiving surface and a showerhead disposed over the substrate receiving surface. The showerhead includes a first passageway having a plurality of first passageway holes and a second passageway having a plurality of second passageway holes. The first passageway is adapted to deliver a first gas flow through the first passageway holes to the substrate receiving surface. The second passageway is adapted to deliver a second gas flow through the second passageway holes to the substrate receiving surface. The substrate processing chamber further includes a plasma power source. The plasma power source may be in electrical communication with the showerhead or with the substrate support to generate a plasma from gases between the showerhead and the substrate support. One embodiment of a method of delivering two separate gas flows to a processing region comprises performing one or more of processes from the group including forming a titanium layer by plasma enhanced chemical vapor deposition, forming a passivation layer by a nitrogen plasma treatment of a titanium layer, forming a composite titanium/titanium nitride layer by an alternating plasma enhanced chemical vapor deposition and a nitrogen plasma treatment, forming a titanium nitride layer by thermal chemical vapor deposition, and plasma treating a titanium nitride layer.

Showerhead Assembly For A Processing Chamber

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US Patent:
20030132319, Jul 17, 2003
Filed:
Jan 15, 2002
Appl. No.:
10/047076
Inventors:
Mark Hytros - Santa Clara CA, US
Truc Tran - Fremont CA, US
Hongbee Teoh - Saratoga CA, US
Lawrence Lei - Milipitas CA, US
Avgerinos Gelatos - Redwood City CA, US
Salvador Umotoy - Antioch CA, US
International Classification:
B05B001/14
US Classification:
239/548000
Abstract:
A showerhead assembly for distributing gases within a processing chamber is provided. In one embodiment, the showerhead assembly includes a cylindrical member having a faceplate coupled thereto. The cylindrical member has an outwardly extending first flange at a first end. The faceplate is coupled to a second end of the cylindrical member and has a plurality of holes formed though a center region of the faceplate. The joint between the cylindrical member and the faceplate allow for relative movement when subjected to thermal stresses. In another embodiment, at least one clamp member retains the faceplate to the second end of the cylindrical member.
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Mark M Hytros from Chicago, IL, age ~51 Get Report