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Mao D Lim

from San Jose, CA
Age ~53
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Also known as:
Mao Rosa Lim, Mao D Im, Mau D Lim, Lin D Mao
Phone and address:
7219 Longhill Way, San Jose, CA 95138
(408) 270-7534
Related to:
Kheang C Lim, 65Dao T Lim, 80Derek S Han, 68Kelly Leang, 48Meily Lim, 38Tony Sovann Vath, 70Rosa I MarquezTony Sovann Vath, 87Martha J Marquez, 84Rosa I Lim, 51Meily Lin, 38Kim L Vath, 42Kim VathKim Lim, 90Jesus S Marquez, 82
Connected to:
Aesop L Lim, 61Aina H Lim, 47Alan R Lim, 58Albert J Lim, 40Alexis Lim, 43Alexson Lim, 35Alfian Lim, 50Allyn T Lim, 35Alma R Lim, 66Alvyn Y Lim, 35

Mao Lim Phones & Addresses

  • 7219 Longhill Way, San Jose, CA 95138 (408) 270-7534
  • 3131 Peanut Brittle Dr, San Jose, CA 95148 (408) 270-7534
  • Whittier, CA
  • Tracy, CA
  • Long Beach, CA

Work

Company: Applied materials Position: Engineer

Languages

English

Industries

Semiconductors

Resumes

Resumes

Mao Lim Photo 1

Engineer

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Location:
7219 Longhill Way, San Jose, CA 95138
Industry:
Semiconductors
Work:
Applied Materials
Engineer
Languages:
English

Publications

Us Patents

Computer-Readable Medium That Contains Software For Executing A Method For Cleaning A Cvd Chamber

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US Patent:
7465357, Dec 16, 2008
Filed:
Jun 23, 2006
Appl. No.:
11/426154
Inventors:
Maosheng Zhao - Santa Clara CA, US
Juan Carlos Rocha-Alvarez - Sunnyvale CA, US
Inna Shmurun - Foster City CA, US
Mao D. Lim - San Jose CA, US
Shankar Venkataraman - Santa Clara CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
C23C 16/00
H01L 21/00
US Classification:
118663, 118723 E, 15634547, 15634524, 134 11
Abstract:
The present invention is a method and apparatus for cleaning a chemical vapor deposition (CVD) chamber using cleaning gas energized to a plasma in a gas mixing volume separated by an electrode from a reaction volume of the chamber. In one embodiment, a source of RF power is coupled to a lid of the chamber, while a switch is used to couple a showerhead to ground terminals or the source of RF power.

Method And Apparatus For Cleaning A Cvd Chamber

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US Patent:
7500445, Mar 10, 2009
Filed:
Jan 27, 2003
Appl. No.:
10/354214
Inventors:
Maosheng Zhao - Santa Clara CA, US
Juan Carlos Rocha-Alvarez - Sunnyvale CA, US
Inna Shmurun - Foster City CA, US
Mao D. Lim - San Jose CA, US
Shankar Venkataraman - Santa Clara CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
C23C 16/00
H01L 21/00
US Classification:
118723E, 15634547, 134 11
Abstract:
The present invention is a method and apparatus for cleaning a chemical vapor deposition (CVD) chamber using cleaning gas energized to a plasma in a gas mixing volume separated by an electrode from a reaction volume of the chamber. In one embodiment, a source of RF power is coupled to a lid of the chamber, while a switch is used to couple a showerhead to ground terminals or the source of RF power.

Method And Apparatus For Cleaning A Cvd Chamber

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US Patent:
7654224, Feb 2, 2010
Filed:
Feb 17, 2009
Appl. No.:
12/372312
Inventors:
Maosheng Zhao - Santa Clara CA, US
Juan Carlos Rocha-Alvarez - Sunnyvale CA, US
Inna Shmurun - Foster City CA, US
Mao D. Lim - San Jose CA, US
Shankar Venkataraman - Santa Clara CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 21/00
C23C 16/00
US Classification:
118723E, 15634547
Abstract:
The present invention is a method and apparatus for cleaning a chemical vapor deposition (CVD) chamber using cleaning gas energized to a plasma in a gas mixing volume separated by an electrode from a reaction volume of the chamber. In one embodiment, a source of RF power is coupled to a lid of the chamber, while a switch is used to couple a showerhead to ground terminals or the source of RF power.

Method And Apparatus For Cleaning A Cvd Chamber

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US Patent:
20100095891, Apr 22, 2010
Filed:
Jan 7, 2010
Appl. No.:
12/684039
Inventors:
Maosheng Zhao - Santa Clara CA, US
Juan Carlos Rocha-Alvarez - Sunnyvale CA, US
Inna Shmurun - Foster City CA, US
Mao D. Lim - San Jose CA, US
Shankar Venkataraman - Santa Clara CA, US
International Classification:
H01L 21/465
US Classification:
118723 E, 257E21485
Abstract:
The present invention is a method and apparatus for cleaning a chemical vapor deposition (CVD) chamber using cleaning gas energized to a plasma in a gas mixing volume separated by an electrode from a reaction volume of the chamber. In one embodiment, a source of RF power is coupled to a lid of the chamber, while a switch is used to couple a showerhead to ground terminals or the source of RF power.

Method For Cleaning A Cvd Chamber

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US Patent:
7464717, Dec 16, 2008
Filed:
Jun 19, 2006
Appl. No.:
11/424959
Inventors:
Maosheng Zhao - Santa Clara CA, US
Juan Carlos Rocha-Alvarez - Sunnyvale CA, US
Inna Shmurun - Foster City CA, US
Mao D. Lim - San Jose CA, US
Shankar Venkataraman - Santa Clara CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
C23C 16/00
H01L 21/00
US Classification:
134 11, 118723 E, 15634547
Abstract:
The present invention is a method and apparatus for cleaning a chemical vapor deposition (CVD) chamber using cleaning gas energized to a plasma in a gas mixing volume separated by an electrode from a reaction volume of the chamber. In one embodiment, a source of RF power is coupled to a lid of the chamber, while a switch is used to couple a showerhead to ground terminals or the source of RF power.

Method And Apparatus For Cleaning A Cvd Chamber

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US Patent:
20170121813, May 4, 2017
Filed:
Jan 17, 2017
Appl. No.:
15/408065
Inventors:
- Santa Clara CA, US
Juan Carlos ROCHA-ALVAREZ - San Carlos CA, US
Inna SHMURUN - Foster City CA, US
Soovo SEN - Sunnyvale CA, US
Mao D. LIM - San Jose CA, US
Shankar VENKATARAMAN - San Jose CA, US
Ju-Hyung LEE - San Jose CA, US
International Classification:
C23C 16/44
C23C 16/458
H01L 21/67
C23C 16/46
Abstract:
The present invention is a method and apparatus for cleaning a chemical vapor deposition (CVD) chamber using cleaning gas energized to a plasma in a gas mixing volume separated by an electrode from a reaction volume of the chamber. In one embodiment, a source of RF power is coupled to a lid of the chamber, while a switch is used to couple a showerhead to ground terminals or the source of RF power.

Method And Apparatus For Cleaning A Cvd Chamber

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US Patent:
20140158048, Jun 12, 2014
Filed:
Feb 12, 2014
Appl. No.:
14/179143
Inventors:
- Santa Clara CA, US
Inna SHMURUN - Foster City CA, US
Soovo SEN - Sunnyvale CA, US
Mao D. LIM - San Jose CA, US
Shankar VENKATARAMAN - Santa Clara CA, US
Ju-Hyung LEE - San Jose CA, US
Assignee:
APPLIED MATERIALS, INC. - Santa Clara CA
International Classification:
C23C 16/44
US Classification:
118723 E, 118 70, 118 50
Abstract:
The present invention is a method and apparatus for cleaning a chemical vapor deposition (CVD) chamber using cleaning gas energized to a plasma in a gas mixing volume separated by an electrode from a reaction volume of the chamber. In one embodiment, a source of RF power is coupled to a lid of the chamber, while a switch is used to couple a showerhead to ground terminals or the source of RF power.
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Mao D Lim from San Jose, CA, age ~53 Get Report