Inventors:
Bin Li - Fairfax VA
Livia L. Zien - Fredericksburg VA
David C. Lawson - Fredericksburg VA
Tatia B. Butts - Manassas VA
Tri M. Hoang - Clifton VA
Assignee:
Lockheed Martin Corporation - Bethesda MD
International Classification:
G11C 1100
Abstract:
A single event upset hardened multiport memory cell to be utilized in a register file is disclosed. The single event upset hardened multiport memory cell includes a storage cell, a write bitline, a read bitline. The storage cell, which is utilized for storing data, includes first and second sets of cross-coupled transistors and first and second sets of isolation transistors. The first and second sets of isolation transistors are respectively coupled to the first and second set of cross-coupled transistors such that two inversion paths are formed between the two sets of cross-coupled transistors and the two sets of isolation transistors. Coupled to the storage cell, the write bitline inputs write data to the storage cell. Also coupled to the storage cell, the read bitline outputs read data from the storage cell.