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Lauraine F Denault

from Lebanon, TN
Age ~68
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Also known as:
Lauraine A Denault, Laura F Denault
Related to:
John N Denault, 71Marianne D Connor, 72
Connected to:
Albert C Denault, 62Andrew D Denault, 36Clayton A Denault, 58Helen Denault, 97Jay E Denault, 69Jeannie M Denault, 54Mike Denault, 58Neil L Denault, 41Nicole C Denault, 55Rachel L Denault, 37

Lauraine Denault Phones & Addresses

  • Lebanon, TN
  • Cohoes, NY
  • Nassau, NY
  • Wakefield, MA
  • Topsfield, MA
  • Lowell, MA
  • 257 Mcclellan Rd, Nassau, NY 12123

Resumes

Resumes

Lauraine Denault Photo 1

Microscopist At Ge Global Research

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Location:
257 Mcclellan Rd, Nassau, NY 12123
Industry:
Research
Work:
Ge Global Research
Microscopist at Ge Global Research
Milliporesigma 1982 - 1997
Microscopist
Education:
University of Massachusetts Lowell
Skills:
Scanning Electron Microscopy
Characterization
Materials Science
Electron Microscopy
Nanotechnology
R&D
Thin Films
Spectroscopy
Design of Experiments
Powder X Ray Diffraction
Tem
Afm
Chemistry
Xps
Surface Chemistry
Microscopy
Semiconductors
Fluorescence
Polymers
Experimentation
Physics
Science
Nanomaterials
Xrf
Edx
Optical Microscopy
Materials
Image Analysis
Failure Analysis
Uv/Vis
Image Processing
Labview
Analytical Chemistry
Surface Analysis
Interests:
Scanning Electrion Microscopy
Tools of the Trade
Lauraine Denault Photo 2

Microscopist At Ge Global Research

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Position:
Microscopist at Ge Global Research
Location:
Albany, New York Area
Industry:
Research
Work:
Ge Global Research
Microscopist
Education:
University of Massachusetts at Lowell

Publications

Us Patents

Gated Nanorod Field Emitter Structures And Associated Methods Of Fabrication

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US Patent:
7326328, Feb 5, 2008
Filed:
Jul 19, 2005
Appl. No.:
11/185004
Inventors:
Heather Diane Hudspeth - Clifton Park NY, US
Ji Ung Lee - Niskayuna NY, US
Reed Roeder Corderman - Niskayuna NY, US
Anping Zhang - Niskayuna NY, US
Renee Bushey Rohling - Burnt Hills NY, US
Lauraine Denault - Nassau NY, US
Joleyn Eileen Balch - Clifton Park NY, US
Assignee:
General Electric Company - Niskayuna NY
International Classification:
C25D 5/02
US Classification:
205118, 313306, 427 77
Abstract:
The present invention relates to gated nanorod field emission devices, wherein such devices have relatively small emitter tip-to-gate distances, thereby providing a relatively high emitter tip density and low turn on voltage. Such methods employ a combination of traditional device processing techniques (lithography, etching, etc. ) with electrochemical deposition of nanorods. These methods are relatively simple, cost-effective, and efficient; and they provide field emission devices that are suitable for use in x-ray imaging applications, lighting applications, flat panel field emission display (FED) applications, etc.

Gated Nanorod Field Emitter Structures And Associated Methods Of Fabrication

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US Patent:
7411341, Aug 12, 2008
Filed:
Aug 8, 2007
Appl. No.:
11/835691
Inventors:
Heather Diane Hudspeth - Clifton Park NY, US
Reed Roeder Corderman - Niskayuna NY, US
Renee Bushey Rohling - Burnt Hills NY, US
Lauraine Denault - Nassau NY, US
Assignee:
General Electric Company - Niskayuna NY
International Classification:
H01J 1/30
H01J 1/02
US Classification:
313309, 313311, 313336, 313351, 313495, 445 24, 438 20
Abstract:
The present invention relates to gated nanorod field emission devices, wherein such devices have relatively small emitter tip-to-gate distances, thereby providing a relatively high emitter tip density and low turn on voltage. Such methods employ a combination of traditional device processing techniques (lithography, etching, etc. ) with electrochemical deposition of nanorods. These methods are relatively simple, cost-effective, and efficient; and they provide field emission devices that are suitable for use in x-ray imaging applications, lighting applications, flat panel field emission display (FED) applications, etc.

Gated Nanorod Field Emitter Structures And Associated Methods Of Fabrication

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US Patent:
7902736, Mar 8, 2011
Filed:
Jan 9, 2008
Appl. No.:
11/971452
Inventors:
Heather Diane Hudspeth - Clifton Park NY, US
Ji Ung Lee - Niskayuna NY, US
Reed Roeder Corderman - Niskayuna NY, US
Anping Zhang - Niskayuna NY, US
Renee Bushey Rohling - Burnt Hills NY, US
Lauraine Denault - Nassau NY, US
Joleyn Eileen Balch - Clifton Park NY, US
Assignee:
General Electric Company - Niskayuna NY
International Classification:
H01J 1/62
US Classification:
313495, 313309
Abstract:
The present invention relates to gated nanorod field emission devices, wherein such devices have relatively small emitter tip-to-gate distances, thereby providing a relatively high emitter tip density and low turn on voltage. Such methods employ a combination of traditional device processing techniques (lithography, etching, etc. ) with electrochemical deposition of nanorods. These methods are relatively simple, cost-effective, and efficient; and they provide field emission devices that are suitable for use in x-ray imaging applications, lighting applications, flat panel field emission display (FED) applications, etc.

Anodized Aluminum Oxide Nanoporous Template And Associated Method Of Fabrication

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US Patent:
20060270229, Nov 30, 2006
Filed:
May 27, 2005
Appl. No.:
11/141613
Inventors:
Reed Corderman - Niskayuna NY, US
Heather Hudspeth - Clifton Park NY, US
Renee Rohling - Burnt Hills NY, US
Lauraine Denault - Nassau NY, US
Scott Miller - Clifton Park NY, US
International Classification:
H01L 21/302
H01L 21/461
US Classification:
438689000, 438719000
Abstract:
In some embodiments, the present invention is directed to nanoporous anodized aluminum oxide templates of high uniformity and methods for making same, wherein such templates lack a AAO barrier layer. In some or other embodiments, the present invention is directed to methods of electrodepositing nanorods in the nanopores of these templates. In still other embodiments, the present invention is directed to electrodepositing catalyst material in the nanopores of these templates and growing nanorods or other 1-dimensional nanostructures via chemical vapor deposition (CVD) or other techniques.

Gated Nanorod Field Emitter Structures And Associated Methods Of Fabrication

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US Patent:
20070085459, Apr 19, 2007
Filed:
Jul 19, 2005
Appl. No.:
11/185007
Inventors:
Heather Hudspeth - Clifton Park NY, US
Reed Corderman - Niskayuna NY, US
Renee Rohling - Burnt Hills NY, US
Lauraine Denault - Nassau NY, US
International Classification:
H01J 1/02
H01J 9/02
H01J 1/00
US Classification:
313309000, 313311000, 313310000
Abstract:
The present invention relates to gated nanorod field emission devices, wherein such devices have relatively small emitter tip-to-gate distances, thereby providing a relatively high emitter tip density and low turn on voltage. Such methods employ a combination of traditional device processing techniques (lithography, etching, etc.) with electrochemical deposition of nanorods. These methods are relatively simple, cost-effective, and efficient; and they provide field emission devices that are suitable for use in x-ray imaging applications, lighting applications, flat panel field emission display (FED) applications, etc.

High Performance Heat Transfer Device, Methods Of Manufacture Thereof And Articles Comprising The Same

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US Patent:
20100294467, Nov 25, 2010
Filed:
May 22, 2009
Appl. No.:
12/470624
Inventors:
Kripa Kiran Varanasi - Cambridge MA, US
Pramod Chamarthy - Niskayuna NY, US
Hendrik Pieter Jacobus de Bock - Clifton Park NY, US
Lauraine Denault - Nassau NY, US
Tao Deng - Clifton Park NY, US
Aaron Jay Knobloch - Mechanicville NY, US
Ambarish Jayant Kulkarni - Niskayuna NY, US
Brian Magann Rush - Niskayuna NY, US
Boris Alexander Russ - Niskayuna NY, US
Assignee:
GENERAL ELECTRIC COMPANY - Schenectady NY
International Classification:
F28F 13/00
B05D 7/00
B05D 1/36
B21D 53/02
US Classification:
165108, 427212, 427470, 165135, 2989003
Abstract:
Disclosed herein is an heat transfer device that includes a shell; the shell being an enclosure that prevents matter from within the shell from being exchanged with matter outside the shell; the shell having an outer surface and an inner surface; and a particle layer disposed on the inner surface of the shell; the particle layer having a thickness effective to enclose a region for transferring a fluid between opposing faces; the particle layer including a first layer and a second layer; the second layer being disposed upon the first layer; the first layer having average particle sizes of about 10 to about 10,000,000 nanometers; the second layer having average particle sizes of about 10 to about 10,000 nanometers.

Method Of Forming An Oxide Coating That Reduces Accumulation Of Radioactive Species On A Metallic Surface

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US Patent:
20120315496, Dec 13, 2012
Filed:
Jun 7, 2011
Appl. No.:
13/154702
Inventors:
Young Jin Kim - Clifton Park NY, US
Anthony Yu-Chung Ku - Rexford NY, US
Rebecca Christine Malish - Schenectady NY, US
Thomas Alfred Caine - San Jose CA, US
Lauraine Denault - Nassau NY, US
Anthony Thomas Barbuto - Troy NY, US
Catherine Procik Dulka - West Chester PA, US
Patrick Daniel Willson - Latham NY, US
Peter Louis Andresen - Schenectady NY, US
Assignee:
GENERAL ELECTRIC COMPANY - Schenectady NY
International Classification:
B05D 3/02
B32B 15/04
B82Y 30/00
US Classification:
428469, 427380, 977773
Abstract:
A method of forming an oxide coating for reducing the accumulation of radioactive species on a metallic surface exposed to fluids containing charged particles is disclosed. The method includes preparing an aqueous colloidal suspension containing about 0.5 to about 35 weight percent of nanoparticles that contain at least one of titania and zirconia, and about 0.1% to about 10% 2-[2-(2-methoxyethoxy)ethoxy]acetic acid (CHO) or polyfluorosufonic acid in water, depositing the aqueous colloidal suspension on the metallic surface, drying the aqueous colloidal suspension to form a green coating, and then heating the green coating to a temperature of up to 500 C. to densify the green coating to form an oxide coating having a zeta potential less than or equal to the electrical polarity of the charged particles so as to minimize deposition of the charged particles on the metallic surface. The nanoparticles have a diameter of up to about 200 nanometers.

Article For High Temperature Service

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US Patent:
20150159507, Jun 11, 2015
Filed:
Dec 6, 2013
Appl. No.:
14/098864
Inventors:
- SCHENECTADY NY, US
Lauraine Denault - Nassau NY, US
Larry Steven Rosenzweig - Clifton Park NY, US
Assignee:
GENERAL ELECTRIC COMPANY - SCHENECTADY NY
International Classification:
F01D 25/00
Abstract:
Articles for high temperature service, especially where enhanced strain tolerance coupled with resistance to ingested dust and debris (CMAS) is desirable, are provided herein. The article comprises a substrate and a multi-layered coating system disposed over the substrate. The coating system comprises a first layer comprising a first material and a second layer comprising a second material, with the first layer disposed between the second layer and the substrate. The second material is more resistant to infiltration by a nominal CMAS composition relative to 8 weight percent yttria-stabilized zirconia at a temperature of 1300 degrees Celsius. The second layer comprises a plurality of through-thickness cracks, wherein at least 90 percent of the cracks have a mean crack opening displacement, measured in a distal surface region, of up to about 5 micrometers.
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Lauraine F Denault from Lebanon, TN, age ~68 Get Report