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Larry E Frisa

from Pflugerville, TX
Age ~67
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Also known as:
Larry Edward Frisa, Lawrence E Frisa, Laurence E Frisa
Phone and address:
1802 Secluded Willow Cv, Pflugerville, TX 78660
(512) 341-2270
Related to:
Jeremy N Frisa, 30Linda L Frisa, 65Joshua H Frisa, 35
Connected to:
Marie C Frisa, 91Maria E Frisancho, 65Gary L Frisard, 51Jill K Frisard, 60Linda A Frisard, 60Raquel Frisardi, 40Roger V Frisario, 51Adrienne E Frisbee, 45Ann A Frisbee, 70Brandon A Frisbee, 37

Larry Frisa Phones & Addresses

  • 1802 Secluded Willow Cv, Pflugerville, TX 78660 (512) 341-2270
  • 2006 Spring Hollow Path, Round Rock, TX 78681 (512) 341-2270
  • Cedar Park, TX
  • Mendham, NJ
  • Austin, TX

Work

Company: Independent contractor 2014 to 2016 Position: Senior engineer and scientist

Education

Degree: Bachelors, Bachelor of Science School / High School: University of California, Davis Specialities: Physics

Skills

Process Engineering • R&D • Product Development • Design of Experiments • Semiconductor Industry • Engineering Project Management • New Equipment Development • International Experience • Problem Solver • Creative Ideas • Excellent Communication Skills • Statistical Process Control • Photography • Integrity • Process Simulation • Engineering Management • Testing • Problem Solving • Program Management • Six Sigma • Engineering • Process Improvement

Languages

English • German

Interests

Family • Church Ministries • Scottish Drumming • Photography

Emails

l***a@aol.com

Industries

Semiconductors

Resumes

Resumes

Larry Frisa Photo 1

Larry Frisa

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Location:
Round Rock, TX
Industry:
Semiconductors
Work:
Independent Contractor 2014 - 2016
Senior Engineer and Scientist
Toppan Photomasks, Inc. 2002 - 2014
Development and Process Engineer
Dupont Photomasks Schott Lithotec 2002 - 2003
Project Manager
Motorola 1992 - 2002
R and D Process Engineer
Semiconductor300 1998 - 2000
Cvd and Pvd Department Manager
Education:
University of California, Davis
Bachelors, Bachelor of Science, Physics Colorado State University
Master of Science, Masters, Physics
Skills:
Process Engineering
R&D
Product Development
Design of Experiments
Semiconductor Industry
Engineering Project Management
New Equipment Development
International Experience
Problem Solver
Creative Ideas
Excellent Communication Skills
Statistical Process Control
Photography
Integrity
Process Simulation
Engineering Management
Testing
Problem Solving
Program Management
Six Sigma
Engineering
Process Improvement
Interests:
Family
Church Ministries
Scottish Drumming
Photography
Languages:
English
German

Publications

Us Patents

Method And System For Determining A Thickness Of A Layer

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US Patent:
6472237, Oct 29, 2002
Filed:
Oct 26, 2001
Appl. No.:
10/033066
Inventors:
Larry Frisa - Round Rock TX
Karl Mautz - Round Rock TX
Assignee:
Motorola, Inc. - Schaumburg IL
International Classification:
G01R 3126
US Classification:
438 14, 356448
Abstract:
The present invention relates to a method of determining a thickness of at least one layer on at least one semiconductor wafer ( ), comprising the steps of: projecting a first laser pulse ( ) on a surface ( ) of the at least one layer ( ), thereby generating an acoustical wave due to heating of the surface of the at least one layer ( ); after a propagation time of the acoustical wave, projecting a series of second laser pulses ( ) on the surface ( ) of the at least one layer ( ); measuring reflected laser pulses ( ) of the second laser pulses ( ), thereby sensing the times of reflection property changes of the surface ( ) of the at least one layer ( ); and determining the thickness of the at least one layer ( ) by analyzing the times of reflection property changes. The present invention further relates to a system for determining a thickness of a layer ( ) on a semiconductor wafer ( ).

Method And System For Determining A Thickness Of A Layer

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US Patent:
6671059, Dec 30, 2003
Filed:
Sep 13, 2002
Appl. No.:
10/243460
Inventors:
Larry Frisa - Round Rock TX
Karl Mautz - Round Rock TX
Assignee:
Motorola, Inc. - Schaumburg IL
International Classification:
G01B 1106
US Classification:
356630, 356503, 25055927
Abstract:
The present invention relates to a method of determining a thickness of at least one layer on at least one semiconductor wafer ( ), comprising the steps of: projecting a first laser pulse ( ) on a surface ( ) of the at least one layer ( ), thereby generating an acoustical wave due to heating of the surface of the at least one layer ( ); after a propagation time of the acoustical wave, projecting a series of second laser pulses ( ) on the surface ( ) of the at least one layer ( ); measuring reflected laser pulses ( ) of the second laser pulses ( ), thereby sensing the times of reflection property changes of the surface ( ) of the at least one layer ( ); and determining the thickness of the at least one layer ( ) by analyzing the times of reflection property changes. The present invention further relates to a system for determining a thickness of a layer ( ) on a semiconductor wafer ( ).

Photomask And Method For Conveying Information Associated With A Photomask Substrate

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US Patent:
20060269851, Nov 30, 2006
Filed:
Aug 7, 2006
Appl. No.:
11/462876
Inventors:
Larry Frisa - Round Rock TX, US
Franklin Kalk - Austin TX, US
International Classification:
G03F 1/00
US Classification:
430005000, 430945000
Abstract:
A method for conveying information about a photomask substrate is disclosed. The method includes heating an area of a photomask substrate located between a top surface and a bottom surface of the photomask substrate with a laser. The heat applied to the area of the substrate forms a mark inside the substrate that stores information identifying the photomask substrate.

Apparatus And Method For Preventing Haze Growth On A Surface Of A Substrate

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US Patent:
20090004077, Jan 1, 2009
Filed:
Feb 12, 2007
Appl. No.:
12/279069
Inventors:
Larry E. Frisa - Round Rock TX, US
Ethan M. Frye - Westfield IL, US
International Classification:
A61L 2/20
US Classification:
422300, 422292
Abstract:
An apparatus and method for preventing haze growth on a surface of a substrate are disclosed. The apparatus includes a container operable to store a substrate and a gas source coupled to the container. The gas source is operable to dispense a gas into the container in order to prevent a haze from growing on a surface of the substrate.

Skm Ion Source

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US Patent:
48915254, Jan 2, 1990
Filed:
Nov 14, 1988
Appl. No.:
7/271241
Inventors:
Larry E. Frisa - Austin TX
Monroe L. King - Austin TX
Stephen E. Sampayan - Livermore CA
Assignee:
Eaton Corporation - Cleveland OH
International Classification:
H01J 2700
US Classification:
250423R
Abstract:
An ion source of the side extraction type which includes auxiliary electrodes surrounding the cathode at the ends of the anode, and insulators surrounding the auxiliary electrodes and electrically isolating them from the anode. The auxiliary electrodes essentially define the ends of the discharge chamber, leaving the anode confined to the cylindrical surface surrounding the filament. Each insulator is made up of an inner insulator and an outer insulator with an annular space defined between them. The inner and outer insulators are each in the form of a cylinder with a radially extending flange formed at one end, and interfit with the anode and with each other such that cylindrical spaces are defined between the outer flange portion and the anode and between the inner and outer flange portions. These and other features contribute to improve the electrical isolation between the auxiliary electrode and the anode, prolong source life, and improve beam purity.

Process For Fabricating A Semiconductor Device

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US Patent:
59617918, Oct 5, 1999
Filed:
Feb 26, 1997
Appl. No.:
8/804589
Inventors:
Larry E. Frisa - Cedar Park TX
Laura Pressley - Austin TX
Assignee:
Motorola, Inc. - Schaumburg IL
International Classification:
C23C 1434
US Classification:
2041921
Abstract:
A via 42 is formed in an ILD layer 40 of a semiconductor device 30, using an etch chemistry which is highly selective to an underlying transition metal oxy-nitride film 38. In one form, film 38 is a TiO. sub. x N. sub. y film which is graded in nitrogen and oxygen concentration, being nitrogen rich at the bottom and oxygen reach at the top of the film. One method for forming TiO. sub. x N. sub. y is to sputter deposit a titantium layer 34 onto the semiconductor device using a titanium target 52. Using the same target, a TiN layer 36 is deposited by flowing nitrogen into the deposition chamber. Consequently, a TiN layer 58 is deposited onto target 52. The TiN layer 58 is then sputtered off the target onto the semiconductor device until eventually pure titanium is again being sputtered onto the device. The resulting deposited film has a grade titanium concentration, which is then oxidized to form the graded TiO. sub. x N. sub. y film.

Method Of Forming An Interconnect Structure With A Graded Composition Using A Nitrided Target

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US Patent:
60280034, Feb 22, 2000
Filed:
Jul 3, 1997
Appl. No.:
8/887654
Inventors:
Larry E. Frisa - Cedar Park TX
Assignee:
Motorola, Inc. - Schaumburg IL
International Classification:
H01L 4900
US Classification:
438653
Abstract:
A method for forming an interconnect structure on a semiconductor wafer (114) begins by placing the wafer (114) in a process chamber (100). The process chamber (100) contains a titanium (Ti) target (102) having a thin titanium nitride (TiN) layer (104) formed thereon. An argon-based plasma (106) is used to sputter the layer (104) off of the target (102) and onto a top surface of the water (114) to form an Argon Uniquely Sputtered Titanium Nitride (AUSTiN) layer (116) which has a nitrogen concentration gradient therethrough. After forming the layer (116), an argon-nitrogen plasma (107) is initiated to reform the titanium nitride (TiN) layer (104) on the target and complete the interconnect structure by forming a top stoichiometric or near stoichiometric titanium nitride layer (118) over the layer (116).
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Larry E Frisa from Pflugerville, TX, age ~67 Get Report