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Krishna P Murella

from Phoenix, AZ
Age ~59

Krishna Murella Phones & Addresses

  • 15043 47Th St, Phoenix, AZ 85044
  • 1250 Grove Pkwy, Tempe, AZ 85283
  • 3730 Mill Ave, Tempe, AZ 85282
  • 15043 S 47Th Way, Phoenix, AZ 85044

Publications

Us Patents

Two-Step Chemical-Mechanical Planarization For Damascene Structures On Semiconductor Wafers

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US Patent:
6555466, Apr 29, 2003
Filed:
Mar 29, 1999
Appl. No.:
09/280767
Inventors:
Thomas Laursen - Tempe AZ
Malcolm K. Grief - Chandler AZ
Krishna P. Murella - Tempe AZ
Sanjay Basak - Chandler AZ
Assignee:
Speedfam Corporation - Chandler AZ
International Classification:
H01L 214763
US Classification:
438626
Abstract:
A method of improving planarity of semiconductor wafer surfaces containing damascene and dual-damascene circuitry using chemical-mechanical polishing techniques. The method includes using a first polishing step to substantially remove excess surface metal up to a detected end point. After rinsing, a second step of chemical-mechanical polishing is applied, using a second slurry that has a higher selectivity for dielectric than metal, preferably from 1. 8 to 4 or more times greater. The second step of polishing, in accordance with the invention, has been found to substantially eliminate dishing and improve planarity.

Method For Polishing Copper On A Workpiece Surface

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US Patent:
20060255016, Nov 16, 2006
Filed:
Jul 19, 2006
Appl. No.:
11/489874
Inventors:
Julia Svirchevski - Santa Clara CA, US
Saket Chadda - Phoenix AZ, US
Ismail Emesh - Gilbert AZ, US
Thomas Laursen - New Haven CT, US
Bentley Palmer - Chandler AZ, US
Sanjay Basak - Phoenix AZ, US
Krishna Murella - Phoenix AZ, US
International Classification:
C03C 15/00
H01L 21/461
US Classification:
216088000, 438692000
Abstract:
A method for polishing a metal layer on a workpiece is provided wherein relative motion is produced between the metal layer and a polishing surface and wherein the metal layer has a polish resistant film thereon. The metal layer is first pre-treated to substantially remove the polish resistant film. Next, the metal layer is polished at low pressure between the metal layer and the polishing surface in the presence of a polishing solution. The pretreating may be accomplished by, for example, sputtering, polishing the polish-resistant film in the presence of abrasive polishing solution, polishing the polish-resistant film at higher pressures between the film and the polishing surface, maintaining the temperature of the pretreating step to be substantially between 10 degrees Centigrade and 30 degrees Centigrade, and chemically removing the film.

Pad Conditioning For Copper-Based Semiconductor Wafers

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US Patent:
6387188, May 14, 2002
Filed:
Mar 3, 1999
Appl. No.:
09/261868
Inventors:
Thomas Laursen - Tempe AZ
Malcolm K. Grief - Chandler AZ
Krishna P. Murella - Tempe AZ
Sanjay Basak - Chandler AZ
Assignee:
SpeedFam-IPEC Corporation - Chandler AZ
International Classification:
B08B 304
US Classification:
134 3, 134 2, 134 26, 134 28, 252 791, 252 794, 252 795
Abstract:
A method of conditioning pads used in the polishing of semiconductor wafers containing copper circuitry. The method includes applying a treatment solution that contains a reactant for particulate copper-containing debris on the pad resulting from the copper circuitry. Preferably, the reactant is a carboxylic acid present in a concentration of from about 0. 1 to about 10 weight percent in a solution. The pH of the solution may be adjusted to the range from about 1 to about 6 with a compatible base.

High Oxide Film Removal Rate Shallow Trench (Sti) Chemical Mechanical Planarization (Cmp) Polishing

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US Patent:
20230020073, Jan 19, 2023
Filed:
Dec 2, 2020
Appl. No.:
17/756514
Inventors:
- Tempe AZ, US
Krishna P. Murella - Phoenix AZ, US
Joseph D. Rose - Gilbert AZ, US
Hongjun Zhou - Chandler AZ, US
Mark Leonard O'Neill - Queen Creek AZ, US
Assignee:
Versum Materials US, LLC - Tempe AZ
International Classification:
C09G 1/02
C09K 3/14
B24B 37/04
H01L 21/3105
Abstract:
High oxide film removal rate Shallow Trench Isolation (STI) chemical mechanical planarization (CMP) polishing compositions, methods, and systems of use therefore are provided. The CMP polishing composition comprises abrasives of ceria coated inorganic oxide particles, such as ceria-coated silica; and a chemical additive for providing a high oxide film removal rate. The chemical additive is a gelatin molecule possessing negative and positive charges on the same molecule.

Low Oxide Trench Dishing Chemical Mechanical Polishing

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US Patent:
20210324270, Oct 21, 2021
Filed:
Jun 22, 2021
Appl. No.:
17/354311
Inventors:
- Tempe AZ, US
Krishna P. Murella - Phoenix AZ, US
Joseph D. Rose - Gilbert AZ, US
Hongjun Zhou - Chandler AZ, US
Mark Leonard O'Neill - Queen Creek AZ, US
Assignee:
Versum Materials US, LLC - Tempe AZ
International Classification:
C09K 13/00
C09K 13/02
C09K 13/06
H01L 21/3105
Abstract:
Chemical mechanical planarization (CMP) polishing compositions, methods and systems are provided to reduce oxide trench dishing and improve over-polishing window stability. High and tunable silicon oxide removal rates, low silicon nitride removal rates, and tunable SiO:SiN selectivity are also provided. The compositions use unique chemical additives, such as maltitol, lactitol, maltotritol, ribitol, D-sorbitol, mannitol, dulcitol, iditol, D-(−)-Fructose, sorbitan, sucrose, ribose, Inositol, glucose, D-arabinose, L-arabinose, D-mannose, L-mannose, meso-erythritol, beta-lactose, arabinose, or combinations thereof as oxide trench dishing reducing additives.

Low Oxide Trench Dishing Chemical Mechanical Polishing

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US Patent:
20210309885, Oct 7, 2021
Filed:
Jun 21, 2021
Appl. No.:
17/353236
Inventors:
- Tempe AZ, US
Krishna P. Murella - Phoenix AZ, US
Joseph D. Rose - Gilbert AZ, US
Hongjun Zhou - Chandler AZ, US
Mark Leonard O'Neill - Queen Creek AZ, US
Assignee:
Versum Materials US, LLC - Tempe AZ
International Classification:
C09G 1/02
H01L 21/321
Abstract:
Chemical mechanical planarization (CMP) polishing compositions, methods and systems are provided to reduce oxide trench dishing and improve over-polishing window stability. High and tunable silicon oxide removal rates, low silicon nitride removal rates, and tunable SiO: SiN selectivity are also provided. The compositions use a unique combination of abrasives such as ceria coated silica particles and chemical additives such as maltitol, lactitol, maltotritol or combinations as oxide trench dishing reducing additives.

Shallow Trench Isolation Chemical And Mechanical Polishing Slurry

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US Patent:
20200270479, Aug 27, 2020
Filed:
Jan 22, 2020
Appl. No.:
16/749625
Inventors:
- Tempe AZ, US
Xiabo Shi - Chandler AZ, US
Hongjun Zhou - Chandler AZ, US
Krishna P. Murella - Phoenix AZ, US
Assignee:
Versum Materials US, LLC - Tempe AZ
International Classification:
C09G 1/02
H01L 21/321
Abstract:
Shallow Trench Isolation (STI) chemical mechanical planarization (CMP) compositions, methods of using the composition and systems for using the composition are provided. The compositions comprise abrasive particles, and two different groups of chemical additives; a non-ionic organic surfactant molecule including polysorbate-type surfactants formed by the ethoxylation of the sorbitan and non-ionic organic molecules with multi hydroxyl functional groups in the same molecule. The compositions provide high silicon oxide removal rate (RR) and suppressed SiN removal rate (RR). A good pattern performance are provided by the compositions which offer desired silicon oxide RR at a reasonable DF and showing the high SiN RR suppression at an even higher DF from the blanket wafer data.

Shallow Trench Isolation (Sti) Chemical Mechanical Planarization (Cmp) Polishing With Low Abrasive Concentration And A Combination Of Chemical Additives

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US Patent:
20200239735, Jul 30, 2020
Filed:
Jan 8, 2020
Appl. No.:
16/737083
Inventors:
- Tempe AZ, US
Krishna P. Murella - Phoenix AZ, US
Joseph D. Rose - Gilbert AZ, US
Hongjun Zhou - Chandler AZ, US
Mark Leonard O'Neill - Queen Creek AZ, US
Assignee:
Versum Materials US, LLC - Tempe AZ
International Classification:
C09G 1/02
C09K 3/14
H01L 21/3105
Abstract:
Shallow Trench Isolation (STI) chemical mechanical planarization (CMP) polishing compositions, methods and systems of use therefore are provided. The CMP polishing composition comprises abrasives of ceria coated inorganic metal oxide particles, such as ceria-coated silica; and dual chemical additives for providing high oxide film removal rate. The dual chemical additives comprise gelatin compounds possessing negative and positive charges on the same molecule, and non-ionic organic molecules having multi hydroxyl functional groups in the same molecule.
Krishna P Murella from Phoenix, AZ, age ~59 Get Report