US Patent:
20210324270, Oct 21, 2021
Inventors:
- Tempe AZ, US
Krishna P. Murella - Phoenix AZ, US
Joseph D. Rose - Gilbert AZ, US
Hongjun Zhou - Chandler AZ, US
Mark Leonard O'Neill - Queen Creek AZ, US
Assignee:
Versum Materials US, LLC - Tempe AZ
International Classification:
C09K 13/00
C09K 13/02
C09K 13/06
H01L 21/3105
Abstract:
Chemical mechanical planarization (CMP) polishing compositions, methods and systems are provided to reduce oxide trench dishing and improve over-polishing window stability. High and tunable silicon oxide removal rates, low silicon nitride removal rates, and tunable SiO:SiN selectivity are also provided. The compositions use unique chemical additives, such as maltitol, lactitol, maltotritol, ribitol, D-sorbitol, mannitol, dulcitol, iditol, D-(−)-Fructose, sorbitan, sucrose, ribose, Inositol, glucose, D-arabinose, L-arabinose, D-mannose, L-mannose, meso-erythritol, beta-lactose, arabinose, or combinations thereof as oxide trench dishing reducing additives.