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Kirstin M Alberi

from Denver, CO
Deceased
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Related to:
Michael R Alberi, 80Tom Alberi, 80Thomas Alberi
Connected to:
Amanda R Alberico, 40Jennifer M Alberico, 46Jessica M Alberici, 41Johnny Alberic, 45Larry M Alberici, 67Penny B Alberico, 70Brian M Alberino, 92Gero L Alberino, 31Mark A Alberini, 63Bernice A Albernaz, 80

Kirstin Alberi Phones & Addresses

  • 2954 N Race St, Denver, CO 80205
  • Woodland Park, CO
  • Berkeley, CA
  • 14 Waterhouse Rd, Cape Elizabeth, ME 04107 (207) 799-5390
  • Cape Eliz, ME

Work

Company: National renewable energy laboratory Apr 2008 Position: Senior scientist

Education

Degree: Doctorates, Doctor of Philosophy School / High School: University of California, Berkeley 2005 to 2008 Specialities: Philosophy

Resumes

Resumes

Kirstin Alberi Photo 1

Senior Scientist

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Location:
Denver, CO
Work:
National Renewable Energy Laboratory
Senior Scientist
Education:
University of California, Berkeley 2005 - 2008
Doctorates, Doctor of Philosophy, Philosophy

Publications

Us Patents

Methods Of Producing Free-Standing Semiconductors Using Sacrificial Buffer Layers And Recyclable Substrates

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US Patent:
20130256751, Oct 3, 2013
Filed:
Dec 1, 2010
Appl. No.:
13/990756
Inventors:
Aaron Joseph Ptak - Littleton CO, US
Yong Lin - Albuquerque NM, US
Andrew Norman - Evergreen CO, US
Kirstin Alberi - Denver CO, US
Assignee:
ALLIANCE FOR SUSTAINABLE ENERGY, LLC - Golden CO
International Classification:
H01L 21/02
H01L 29/04
US Classification:
257190, 438479
Abstract:
A method of producing semiconductor materials and devices that incorporate the semiconductor materials are provided. In particular, a method is provided of producing a semiconductor material, such as a III-V semiconductor, on a spinel substrate using a sacrificial buffer layer, and devices such as photovoltaic cells that incorporate the semiconductor materials. The sacrificial buffer material and semiconductor materials may be deposited using lattice-matching epitaxy or coincident site lattice-matching epitaxy, resulting in a close degree of lattice matching between the substrate material and deposited material for a wide variety of material compositions. The sacrificial buffer layer may be dissolved using an epitaxial liftoff technique in order to separate the semiconductor device from the spinel substrate, and the spinel substrate may be reused in the subsequent fabrication of other semiconductor devices. The low-defect density semiconductor materials produced using this method result in the enhanced performance of the semiconductor devices that incorporate the semiconductor materials.

High Bandgap Iii-V Alloys For High Efficiency Optoelectronics

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US Patent:
20130221326, Aug 29, 2013
Filed:
Oct 12, 2011
Appl. No.:
13/878738
Inventors:
Kirstin Alberi - Denver CO, US
Angelo Mascarenhas - Lakewood CO, US
Mark Wanlass - Golden CO, US
Assignee:
Alliance for Substainable Energy, LLC - Golden CO
International Classification:
H01L 33/04
H01L 33/00
US Classification:
257 13, 438 47
Abstract:
High bandgap alloys for high efficiency optoelectronics are disclosed. An exemplary optoelectronic device may include a substrate, at least one AlInP layer, and a step-grade buffer between the substrate and at least one AlInP layer. The buffer may begin with a layer that is substantially lattice matched to GaAs, and may then incrementally increase the lattice constant in each sequential layer until a predetermined lattice constant of AlInP is reached.

Superstrate Sub-Cell Voltage-Matched Multijunction Solar Cells

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US Patent:
20140209149, Jul 31, 2014
Filed:
Apr 2, 2014
Appl. No.:
14/243320
Inventors:
- Golden CO, US
Kirstin ALBERI - Denver CO, US
Assignee:
Alliance for Sustainable Energy, LLC - Golden CO
International Classification:
H01L 31/0687
H01L 31/05
US Classification:
136249, 438 74
Abstract:
Voltage-matched thin film multijunction solar cell and methods of producing cells having upper CdTe pn junction layers formed on a transparent substrate which in the completed device is operatively positioned in a superstate configuration. The solar cell also includes a lower pn junction formed independently of the CdTe pn junction and an insulating layer between CdTe and lower pn junctions. The voltage-matched thin film multijunction solar cells further include a parallel connection between the CdTe pn junction and lower pn junctions to form a two-terminal photonic device. Methods of fabricating devices from independently produced upper CdTe junction layers and lower junction layers are also disclosed.
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Kirstin M Alberi from Denver, CODeceased Get Report