Resumes
Resumes
Kelvin Lynn Phones & Addresses
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Salt Lake City, UT
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Temecula, CA
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780 Glenwood Ct, Pullman, WA 99163 (509) 332-4310 (509) 332-4749 (509) 334-4749
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935 NW Valley View Dr, Pullman, WA 99163 (509) 332-4310
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Center Moriches, NY
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Cardwell, MT
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Tucson, AZ
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East Moriches, NY
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780 SE Glenwood Ct, Pullman, WA 99163 (509) 331-4749
Work
Company:
Washington state university
Address:
2253 Country Club Rd, Pullman, WA 99163
Phones:
(509) 335-1338
Position:
Director
Industries:
Dry, Condensed, and Evaporated Dairy Products
Education
Degree:
Graduate or professional degree
Emails
Business Records
Name / Title
Company / Classification
Phones & Addresses
Director
Washington State University
Dry, Condensed, and Evaporated Dairy Products
Dry, Condensed, and Evaporated Dairy Products
2253 Country Club Rd, Pullman, WA 99163
Piezo Partners LLC
Research and Development of Piezo Electric Crystals
Research and Development of Piezo Electric Crystals
780 SE Glenwood Ct, Pullman, WA 99163
(509) 332-4310
(509) 332-4310
Publications
Us Patents
Force Activated, Piezoelectric, Electricity Generation, Storage, Conditioning And Supply Apparatus And Methods
View pageUS Patent:
6737789, May 18, 2004
Filed:
Dec 2, 2002
Appl. No.:
10/308358
Inventors:
Leon J. Radziemski - Tucson AZ, 85750
Kelvin G. Lynn - Pullman WA, 99163
Kelvin G. Lynn - Pullman WA, 99163
International Classification:
H01L 4104
US Classification:
310339, 310319
Abstract:
A force activated electrical power generator is provided using piezoelectric elements of preferred lead-magnesium-niobate lead titanate (PMN-PT). The circuitry is in preferred versions completely passive generating all power needed. Some circuitry limits voltage across the elements and provides a return charge channel to prevent depolarization. Transformers can be used to increase the output voltage and efficiency. Rectifiers are shown to rectify the output to a single polarity. Filtering, regulation and other conditioning components are also shown. The output from the generator and circuitry can store the electrical charge, such as in a capacitor and/or battery.
Radiation Detector
View pageUS Patent:
7192481, Mar 20, 2007
Filed:
Jun 10, 2003
Appl. No.:
10/516799
Inventors:
Csaba Szeles - Allison Park PA, US
Kelvin G. Lynn - Pullman WA, US
Kelvin G. Lynn - Pullman WA, US
Assignee:
II-VI Incorporated - Saxonburg PA
International Classification:
C30B 28/08
US Classification:
117 45, 117 43
Abstract:
A radiation detector made from a compound, or alloy, comprising CdxZn1−xTe (0=x=1), Pb in a concentration between 10 and 10,000 atomic parts per billion and at least one element selected from the group consisting of (i) Cl and (ii) elements in column III of the periodic table in a concentration between 10 and 10,000 atomic parts per billion. The radiation detector exhibits full electrical compensation, high-resistivity, full depletion under an applied electrical bias and excellent charge transport.
Semiconductive Materials And Associated Uses Thereof
View pageUS Patent:
8049178, Nov 1, 2011
Filed:
Aug 29, 2008
Appl. No.:
12/202026
Inventors:
Kelvin Lynn - Pullman WA, US
Kelly Jones - Colfax WA, US
Guido Ciampi - Waltham MA, US
Kelly Jones - Colfax WA, US
Guido Ciampi - Waltham MA, US
Assignee:
Washington State University Research Foundation - Pullman WA
International Classification:
G01T 1/26
US Classification:
250371, 25037011, 250361 R
Abstract:
High rate radiation detectors are disclosed herein. The detectors include a detector material disposed inside the container, the detector material containing cadmium, tellurium, and zinc, a first dopant containing at least one of aluminum, chlorine, and indium, and a second dopant containing a rare earth metal. The first dopant has a concentration of about 500 to about 20,000 atomic parts per billion, and the second dopant has a concentration of about 200 to about 20,000 atomic parts per billion.
Compositions Of Doped, Co-Doped And Tri-Doped Semiconductor Materials
View pageUS Patent:
8070987, Dec 6, 2011
Filed:
Mar 5, 2007
Appl. No.:
11/910504
Inventors:
Kelvin Lynn - Pullman WA, US
Kelly Jones - Colfax WA, US
Guido Ciampi - Watertown MA, US
Kelly Jones - Colfax WA, US
Guido Ciampi - Watertown MA, US
Assignee:
Washington State University Research Foundation - Pullman WA
International Classification:
H01B 1/06
US Classification:
2525194, 2525211, 25037012
Abstract:
Semiconductor materials suitable for being used in radiation detectors are disclosed. A particular example of the semiconductor materials includes tellurium, cadmium, and zinc. Tellurium is in molar excess of cadmium and zinc. The example also includes aluminum having a concentration of about 10 to about 20,000 atomic parts per billion and erbium having a concentration of at least 10,000 atomic parts per billion.
Semiconductive Materials And Associated Uses Thereof
View pageUS Patent:
8283637, Oct 9, 2012
Filed:
Jan 13, 2011
Appl. No.:
13/006050
Inventors:
Kelvin Lynn - Pullman WA, US
Kelly Jones - Colfax WA, US
Guido Ciampi - Waltham MA, US
Kelly Jones - Colfax WA, US
Guido Ciampi - Waltham MA, US
Assignee:
Washington State University Research Foundation - Pullman WA
International Classification:
G01T 1/24
H01L 31/115
H01L 31/115
US Classification:
250361R, 25037011
Abstract:
High rate radiation detectors are disclosed herein. The detectors include a detector material disposed inside the container, the detector material containing cadmium, tellurium, and zinc, a first dopant containing at least one of aluminum, chlorine, and indium, and a second dopant containing a rare earth metal. The first dopant has a concentration of about 500 to about 20,000 atomic parts per billion, and the second dopant has a concentration of about 200 to about 20,000 atomic parts per billion.
Force Activated, Piezoelectric, Electricity Generation, Storage, Conditioning And Supply Apparatus And Methods
View pageUS Patent:
20040212280, Oct 28, 2004
Filed:
May 18, 2004
Appl. No.:
10/848952
Inventors:
Leon Radziemski - Tucson AZ, US
Kelvin Lynn - Pullman WA, US
Kelvin Lynn - Pullman WA, US
International Classification:
H01L041/08
US Classification:
310/339000
Abstract:
A force activated electrical power generator is provided using piezoelectric elements of preferred lead-magnesium-niobate lead titanate (PMN-PT). The circuitry is in preferred versions completely passive generating all power needed. Some circuitry limits voltage across the elements and provides a return charge channel to prevent depolarization. Transformers can be used to increase the output voltage and efficiency. Rectifiers are shown to rectify the output to a single polarity. Filtering, regulation and other conditioning components are also shown. The output from the generator and circuitry can store the electrical charge, such as in a capacitor and/or battery.
Apparatus And Method To Generate Electricity
View pageUS Patent:
20050206275, Sep 22, 2005
Filed:
May 13, 2005
Appl. No.:
11/128482
Inventors:
Leon Radziemski - Tucson AZ, US
Kelvin Lynn - Pullman WA, US
Kelvin Lynn - Pullman WA, US
International Classification:
H01L041/113
US Classification:
310339000
Abstract:
A source of electric power is disclosed. The power source comprises a piezoelectric element configured to generate an electric charge responsive to an applied stress, where that piezoelectric element is selected from the group consisting of (1-x)Pb(ANb)O-xPbTiO, 0.5[(1-x)PbYbNbO-xPbTiO]-0.5PbZrO, and Pb(YbNb)O—PbTiO, wherein A is selected from the group comprising Zn and Mg, and wherein x is a number greater than 0 and less than 1. In these embodiments, Applicants' power source further comprises a rectifier, and a charge return path interconnected to the piezoelectric element and to the rectifier, wherein the charge return path conducts electrical charge to the piezoelectric element to prevent depolarization or stiffening from occurring after repeated cycles of piezoelectric charge generation. When the piezo element provides voltages below a few volts, a transformer may beneficially be added between the piezoelement and the rectifier to reduce rectifier losses.
Nd:yv04 Laser Crystal And Method Of Growth And Use Thereof
View pageUS Patent:
20080151954, Jun 26, 2008
Filed:
Jul 12, 2007
Appl. No.:
11/827608
Inventors:
Kelvin G. Lynn - Pullman WA, US
Elgin E. Eissler - Renfrew PA, US
Xiaoming Li - Allison Park PA, US
Elgin E. Eissler - Renfrew PA, US
Xiaoming Li - Allison Park PA, US
Assignee:
II-VI Incorporated - Saxonburg PA
International Classification:
H01S 3/16
C01F 17/00
C30B 15/00
C01F 17/00
C30B 15/00
US Classification:
372 41, 117 73, 117 13, 423263
Abstract:
In a method of forming an Nd:YVOlaser crystal, a melt of Nd:YVOin a vacuum is provided and an Nd:YVOseed crystal is provided in the vacuum with its c-axis oriented perpendicular to a surface of the melt. While in the vacuum, Nd:YVOfrom the melt is caused to adhere to the Nd:YVOseed crystal thereby forming an Nd:YVOboule with its c-axis oriented perpendicular to the surface of the melt. A portion of the boule can be removed therefrom to become an Nd:YVOlaser crystal having no sub-grain boundaries and/or ghost veils in a cross section thereof perpendicular to the c-axis. This c-axis grown Nd:YVOcrystal can be used as the lasing element of a laser.