Jun Ho Lee

6423410, Jul 23, 2002

Aug 2, 1999

09/365506

Irving Sucholeiki - Watertown MA
Jun Young Lee - Medford MA

MDS Proteomics, Inc. - Toronto

B32B 516

428403, 428407, 524202

A composite paramagnetic particle and method of making are provided. In one aspect of the invention, a particle comprising a multitude of submicron polymer bead aggregates covalently cross-linked to each other to form larger diameter particles is presented. Distributed throughout the composite paramagnetic particle are vacuous cavities. Each submicron polymer bead has distributed throughout its interior and surface submicron magnetite crystals. In another aspect of the invention, composite particles are made using high energy ultrasound during polymerization of one or more vinyl monomers. In one embodiment, high energy ultrasound is used during an emulsification step and during the early stages of the polymerization process to produce micron sized composite paramagnetic particles. The particles according to the invention exhibit a high percent magnetite incorporation and water and organic solvent stability.

6682660, Jan 27, 2004

May 14, 2002

10/143903

Irving Sucholeiki - Watertown MA
Jun Young Lee - Medford MA

MDS Proteomics, Inc. - Toronto

H01F 100

252 6254, 523205, 523202, 523210

A composite paramagnetic particle and method of making are provided. In one aspect of the invention, a particle comprising a multitude of submicron polymer bead aggregates covalently cross-linked to each other to form larger diameter particles is presented. Distributed throughout the composite paramagnetic particle are vacuous cavities. Each submicron polymer bead has distributed throughout its interior and surface submicron magnetite crystals. In another aspect of the invention, composite particles are made using high energy ultrasound during polymerization of one or more vinyl monomers. In one embodiment, high energy ultrasound is used during an emulsification step and during the early stages of the polymerization process to produce micron sized composite paramagnetic particles. The particles according to the invention exhibit a high percent magnetite incorporation and water and organic solvent stability.

20090055019, Feb 26, 2009

May 8, 2008

12/117389

Walter Dan Stiehl - Somerville MA, US
Cynthia Breazeal - Cambridge MA, US
Jun Ki Lee - Cambridge MA, US
Allan Z. Maymin - Cos Cob CT, US
Heather Knight - Lexington MA, US
Robert L. Toscano - Chula Vista CA, US
Iris M. Cheung - Rochester MN, US

Massachusetts Institute of Technology - Cambridge MA

B25J 9/16
B25J 13/08
B25J 19/02
B25J 9/04
B25J 13/02

700249, 700264, 700254, 700258, 700259, 700260, 901 10, 901 17, 901 20, 901 30, 901 47, 901 50

An interactive system for interacting with a sentient being. The system includes a robotic companion of which the sentient being may be a user and an entity which employs the robot as a participant in an activity involving the user. The robotic companion responds to inputs from an environment that includes the user during the activity. The robotic companion is capable of social and affective behavior either under control of the entity or in response to the environment. The entity may provide an interface by which an operator may control the robotic companion. Example applications for the interactive system include as a system for communicating with patients that have difficulties communicating verbally, a system for teaching remotely-located students or students with communication difficulties, a system for facilitating social interaction between a remotely-located relative and a child, and systems in which the user and the robot interact with an entity such as a smart book. Also disclosed are control interfaces for the robotic companion, techniques for rendering the robotic companion sensitive to touch and responding to those touches, and techniques for providing quiet, back-drivable motion to components of the robotic companion.

20210384041, Dec 9, 2021

Aug 19, 2021

17/406183

- Santa Clara CA, US
Timothy J. Miller - Ipswich MA, US
Jun Seok Lee - Andover MA, US
Il-Woong Koo - Andover MA, US
Deven Raj Mittal - Middleton MA, US

H01L 21/322
H01L 21/263

A method of processing and passivating an implanted workpiece is disclosed, wherein, after passivation, the fugitive emissions of the workpiece are reduced to acceptably low levels. This may be especially beneficial when phosphorus, arsine, germane or another toxic species is the dopant being implanted into the workpiece. In one embodiment, a sputtering process is performed after the implantation process. This sputtering process is used to sputter the dopant at the surface of the workpiece, effectively lowering the dopant concentration at the top surface of the workpiece. In another embodiment, a chemical etching process is performed to lower the dopant concentration at the top surface. After this sputtering or chemical etching process, a traditional passivation process can be performed.

20210032746, Feb 4, 2021

Jul 30, 2019

16/526310

- Santa Clara CA, US
Cuiyang Wang - Andover MA, US
Jun Seok Lee - Andover MA, US

C23C 16/44
G05B 23/02
G06K 9/62

A system for determining when a cleaning process has completed is disclosed. This system relies on an increase in the amount of gas in the processing chamber that occurs when the cleaning is complete. This increase in the amount of gas may be detected in several ways. In one embodiment, a downstream pendulum valve is used to maintain the pressure within the processing chamber at a predetermined value. An increase in the size of the opening in the pendulum valve is indicative of the amount of gas in the system. In another embodiment, a sensor may be used to monitor the pressure within the processing chamber, while the incoming and outgoing flow rates are held constant. An increase in the pressure is indicative of an increase in the amount of gas in the processing chamber. This increase in the amount of gas is used to terminate the cleaning process.

20200373170, Nov 26, 2020

May 21, 2019

16/417853

- Santa Clara CA, US
Timothy J. Miller - Ipswich MA, US
Jun Seok Lee - Andover MA, US
Il-Woong Koo - Andover MA, US
Deven Raj Mittal - Middleton MA, US

H01L 21/322

A method of processing and passivating an implanted workpiece is disclosed, wherein, after passivation, the fugitive emissions of the workpiece are reduced to acceptably low levels. This may be especially beneficial when phosphorus, arsine, germane or another toxic species is the dopant being implanted into the workpiece. In one embodiment, a sputtering process is performed after the implantation process. This sputtering process is used to sputter the dopant at the surface of the workpiece, effectively lowering the dopant concentration at the top surface of the workpiece. In another embodiment, a chemical etching process is performed to lower the dopant concentration at the top surface. After this sputtering or chemical etching process, a traditional passivation process can be performed.

20190273011, Sep 5, 2019

Mar 1, 2018

15/909602

- Gloucester MA, US
Naushad K. Variam - Marblehead MA, US
Sony Varghese - Manchester MA, US
Johannes Van Meer - Middleton MA, US
Jae Young Lee - Bedford MA, US
Jun Lee - Andover MA, US

Varian Semiconductor Equipment Associates, Inc. - Gloucester MA

H01L 21/762
H01L 21/02
H01L 21/265

A method of forming a semiconductor device. The method may include providing a device structure, where the device structure comprises a masked portion and a cut portion. The masked portion may comprise a mask covering at least one semiconductor fin of a fin array, and the cut portion may comprise a trench, where the trench exposes a semiconductor fin region of the fin array. The method may further include providing an exposure of the trench to oxidizing ions, the oxidizing ions to transform a semiconductor material into an oxide.

20140272182, Sep 18, 2014

Feb 28, 2014

14/193758

- Gloucester MA, US
Jun Lee - Andover MA, US
Aseem K. Srivastava - Andover MA, US

C23C 14/54
C23C 14/48

427523

Methods of decreasing the dose per pulse implanted into a workpiece disposed in a process chamber are disclosed. According to one embodiment, the plasma is generated by a RF power supply. This RF power supply may have two different modes, a first, referred to as continuous wave mode, where the RF power supply is continuously outputting a voltage. This mode allows creation of the plasma within the process chamber. During the second mode, referred to as pulsed plasma mode, the RF power supply outputs two different power levels. The platen bias voltage may be a more negative value when the lower RF power level is being applied. This pulsed (or multi-setpoint) plasma also assists in reducing dopant deposition on the wafer during the time when CW plasma is on but the bias voltage pulse is in the off-state. In a further embodiment, a delay is introduced between the transition to the pulsed plasma mode and the initiation of the implanting process. In yet another embodiment the plasma is generated at a location in the chamber more judicious to reducing the dose impinging on the wafer, thereby increasing the process time to allow adequate control of the process.