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Julia Svirchevski

from San Jose, CA
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Also known as:
Julia S Svirchevski, Julia Svirchevski Drewery, Julia Svirschevski, Julie Svirchevski
Phone and address:
1073 Mckay Dr, San Jose, CA 95131
(408) 428-9727
Connected to:
Delores S Svireff, 77Pavel A Svirid, 34Alex Sviridov, 64Richard H Sviridoff, 64Ekaterina Svirina, 53Olga Svirskaia, 47Karen S Svirsky, 76Ruslan M Svistunov, 33Heather Svitak, 36Jodi L Svitak, 58

Julia Svirchevski Phones & Addresses

  • 1073 Mckay Dr, San Jose, CA 95131 (408) 428-9727
  • Glendale, AZ
  • 875 River Pkwy, Santa Clara, CA 95054 (408) 588-1671
  • Florence, AZ
  • Kansas City, MO
  • Pioneer, CA
  • Gilbert, AZ
  • Pinedale, AZ

Work

Company: Novellus systems Position: Senior manager , marketing

Industries

Semiconductors

Resumes

Resumes

Julia Svirchevski Photo 1

Senior Manager , Marketing

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Location:
San Francisco, CA
Industry:
Semiconductors
Work:
Novellus Systems
Senior Manager , Marketing

Business Records

Name / Title
Company / Classification
Phones & Addresses
Julia Svirchevski
Principal
Kla Tencor Corp
Mfg Electrical Measuring Instruments
875 E Riv Pkwy, Santa Clara, CA 95054

Publications

Us Patents

Method And System For Cleaning A Chemical Mechanical Polishing Pad

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US Patent:
6352595, Mar 5, 2002
Filed:
May 28, 1999
Appl. No.:
09/322198
Inventors:
Julia S. Svirchevski - San Jose CA
Katrina A. Mikhaylich - San Jose CA
Assignee:
Lam Research Corporation - Fremont CA
International Classification:
B08B 302
US Classification:
134 3, 134 2, 216 52, 438756
Abstract:
A method and a system are provided for cleaning a CMP pad. The method starts by applying chemicals onto the surface of the CMP pad. The chemicals are then allowed to react with a residue that may be on the pad to produce by-products. Next, the pad surface is rinsed to substantially remove the by-products. A mechanical conditioning operation is then performed on the surface of the pad. In one example, the wafer surface can be a metal, such as copper. Where the wafer surface is copper, the chemical is most preferably HCl, and a solution includes HCl and DI water. Where the wafer surface is oxide, the chemical is most preferably NH OH, and the solution includes NH OH and DI water. Generally, the CMP pad can be in the form of a linear belt, in the form of an round disk, or in any other mechanical or physical configuration.

Method And System Of Cleaning A Wafer After Chemical Mechanical Polishing Or Plasma Processing

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US Patent:
6405399, Jun 18, 2002
Filed:
Jun 25, 1999
Appl. No.:
09/344671
Inventors:
Jeffrey J. Farber - Delmar NY
Julia S. Svirchevski - San Jose CA
Assignee:
Lam Research Corporation - Fremont CA
International Classification:
B08B 302
US Classification:
15 77, 15 883, 134 64 R, 134122 R, 134172, 134902
Abstract:
A method and system are provided for cleaning a surface of a semiconductor wafer following a fabrication operation. The system includes a brush box, which has a fluid manifold and at least one nozzle. The nozzle is connected to the fluid manifold by a flexible conduit. The nozzle is configured to spray a liquid onto the surface of the wafer at an application angle and at a fan angle. The application angle is defined between a plane of the surface of the wafer and a spraying plane of the liquid. The fan angle and the application angle are configured such that the spraying liquid covers the surface of the wafer in a quiescent manner.

Wafer Scrubbing Brush Core

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US Patent:
6543084, Apr 8, 2003
Filed:
May 22, 2001
Appl. No.:
09/863781
Inventors:
Tanlin Dickey - Sunnyvale CA
Julia S. Svirchevski - San Jose CA
Donald E. Anderson - Morgan Hill CA
Mike Ravkin - Sunnyvale CA
Helmuth W. Treichel - Milpitas CA
Roy Winston Pascal - Union City CA
Douglas S. Gardner - Milpitas CA
Assignee:
Lam Research Corporation - Fremont CA
International Classification:
A46B 1106
US Classification:
15179, 15 883, 492 33
Abstract:
A brush core and the method for making a brush core for use in substrate scrubbing are provided. The substrate can be any substrate that may need to undergo a scrubbing operation to complete a cleaning operation, etching operation, or other preparation. For instance, the substrate can be a semiconductor wafer, a disk, or any other type of work piece that will benefit from a brush core that can deliver uniform controlled amounts of fluid through the brush along an entire length of the brush core. The brush core is defined by a tubular core having a length that extends between a first end and a second end. The first end has an opening into a bore that is defined through a middle of the tubular core and extends along an inner length of the tubular core. A first plurality of holes are oriented along a plurality of first lines that extend in the direction of the length of the tubular core, and each of the first plurality of holes define paths to the bore of the tubular core. A second plurality of holes are oriented along a plurality of second lines that extend in the direction of the length of the tubular core, and each of the second plurality of holes define paths to the core of the tubular core.

Method And System For Cleaning A Chemical Mechanical Polishing Pad

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US Patent:
6994611, Feb 7, 2006
Filed:
Oct 30, 2001
Appl. No.:
10/000494
Inventors:
Julia S. Svirchevski - San Jose CA, US
Katrina A. Mikhaylich - San Jose CA, US
Assignee:
Lam Research Corporation - Fremont CA
International Classification:
B24B 1/00
US Classification:
451 56, 451443, 451444, 438692, 15634512, 134 2, 134 3
Abstract:
A method and a system are provided for cleaning a CMP pad. The method starts by applying chemicals onto the surface of the CMP pad. The chemicals are then allowed to react with a residue that may be on the pad to produce by-products. Next, the pad surface is rinsed to substantially remove the by-products. A mechanical conditioning operation is then performed on the surface of the pad. In one example, the wafer surface can be a metal, such as copper. Where the wafer surface is copper, the chemical is most preferably HCl, and a solution includes HCl and DI water. Where the wafer surface is oxide, the chemical is most preferably NHOH, and the solution includes NHOH and DI water. Generally, the CMP pad can be in the form of a linear belt, in the form of an round disk, or in any other mechanical or physical configuration.

Chemical Dilution System For Semiconductor Device Processing System

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US Patent:
7063455, Jun 20, 2006
Filed:
Jan 6, 2003
Appl. No.:
10/338249
Inventors:
Younces Achkire - Los Gatos CA, US
Julia Svirchevski - San Jose CA, US
Jonathan S. Frankel - San Jose CA, US
Assignee:
Applied Materials - Santa Clara CA
International Classification:
B01F 15/04
US Classification:
3661522, 3661621
Abstract:
A dilution stage is adapted to supply a dilute chemistry to a semiconductor device processing apparatus. The dilution stage includes a first vessel adapted to store the chemistry after dilution and a second vessel adapted to store the chemistry prior to dilution. The dilution stage may also include a control mechanism which is adapted to selectively control flowing of the chemistry and a dilutant to the first vessel. The control mechanism may be operative to fill the second vessel with the chemistry, and to flow the dilutant to the first vessel via the second vessel.

Method And System For Chemical Mechanical Polishing Pad Cleaning

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US Patent:
7270597, Sep 18, 2007
Filed:
Oct 21, 2005
Appl. No.:
11/256293
Inventors:
Julia S. Svirchevski - San Jose CA, US
Katrina A. Mikhaylich - San Jose CA, US
Assignee:
Lam Research Corporation - Fremont CA
International Classification:
B24B 1/00
US Classification:
451 56, 451 41, 451443, 451444, 438692, 15634512, 134 2, 134 3
Abstract:
In one embodiment, a method for cleaning a chemical mechanical polishing (CMP) pad is provided. The CMP pad surface has a residue thereon. Chemicals are applied onto the surface of the CMP pad and the pad surface is rinsed so as to substantially remove by-product produced by the chemicals. A mechanical conditioning operation is performed on the surface of the pad. The wafer surface includes copper and oxide during the CMP operation.

Chemical Dilution System For Semiconductor Device Processing System

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US Patent:
7364349, Apr 29, 2008
Filed:
May 22, 2006
Appl. No.:
11/439303
Inventors:
Younes Achkire - Los Gatos CA, US
Julia Svirchevski - San Jose CA, US
Jonathan S. Frankel - San Jose CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
B01F 15/04
US Classification:
3661522, 3661621
Abstract:
A dilution stage is adapted to supply a dilute chemistry to a semiconductor device processing apparatus. The dilution stage includes a first vessel adapted to store the chemistry after dilution and a second vessel adapted to store the chemistry prior to dilution. The dilution stage may also include a control mechanism which is adapted to selectively control flowing of the chemistry and a dilutant to the first vessel. The control mechanism may be operative to fill the second vessel with the chemistry, and to flow the dilutant to the first vessel via the second vessel.

Pad-Assisted Electropolishing

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US Patent:
7686935, Mar 30, 2010
Filed:
Aug 26, 2005
Appl. No.:
11/213190
Inventors:
Steven T. Mayer - Lake Oswego OR, US
Julia Svirchevski - Santa Clara CA, US
John Stephen Drewery - Santa Clara CA, US
Assignee:
Novellus Systems, Inc. - San Jose CA
International Classification:
B23H 5/06
US Classification:
205662, 205668
Abstract:
Pad-assisted electropolishing of the substrate is conducted by performing anodic dissolution of metal at a first portion of the substrate and simultaneously mechanically buffing a second portion of the substrate with a buffing pad. Anodic dissolution includes forming a thin liquid layer of electropolishing liquid between the anodic substrate and a cathodic electropolishing head. The location of electrical contacts between the substrate and power supply allow peripheral edge regions of the substrate to be mechanically buffed with the pad. Preferably, a substrate is further planararized using an isotropic material-removal technique. An apparatus includes an electropolishing head that is movable to a position proximate to a first portion of a substrate to form a thin gap, and a buffing pad that mechanically buffs a second portion of the substrate using minimal pressure.
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Julia Svirchevski from San Jose, CA Get Report