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Jonghoon Baek Phones & Addresses

  • San Diego, CA
  • 20485 Williams Ave, Saratoga, CA 95070 (408) 391-0027
  • 5263 Lassen Ave, San Jose, CA 95129 (408) 865-0563
  • 10300 Jollyville Rd, Austin, TX 78759 (512) 241-0490
  • 2501 Lake Austin Blvd, Austin, TX 78703 (512) 708-1841
  • 3543 Greystone Dr, Austin, TX 78731 (512) 794-0152
  • Santa Clara, CA

Work

Company: Applied materials Feb 2008 Address: Santa Clara, CA, USA Position: Mts (member of technical staff)

Education

Degree: Ph.D School / High School: The University of Texas at Austin 2001 to 2006 Specialities: Optical nano materials and semiconductor thin films

Skills

Plasma Physics • Semiconductors • Sputtering • Thin Films • Cvd • Pecvd • Pvd • Metrology • Plasma Enhanced Chemical Vapor Deposition • Mems • Rf Engineering • Silicon • Research and Development • Semiconductor Process • Optics • Fiber Optics • Nanotechnology • Nanomaterials • Laser Physics

Languages

English • Korean

Interests

Golf • Tennis

Industries

Semiconductors

Resumes

Resumes

Jonghoon Baek Photo 1

Director

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Location:
Sunnyvale, CA
Industry:
Semiconductors
Work:
Applied Materials - Santa Clara, CA, USA since Feb 2008
MTS (Member of Technical Staff)

Intevac - Santa Clara, CA, USA Jul 2006 - Feb 2008
MTS (Member of Technical Staff)

Korea Electric Power Corporation (KEPCO) - Deajon, South Korea Jan 1996 - Jul 2001
Senior research Engineer
Education:
The University of Texas at Austin 2001 - 2006
Ph.D, Optical nano materials and semiconductor thin films
Yonsei University 1994 - 1996
Master, Optical wave guide
Yonsei University 1990 - 1994
Bachelor, Physics
Skills:
Plasma Physics
Semiconductors
Sputtering
Thin Films
Cvd
Pecvd
Pvd
Metrology
Plasma Enhanced Chemical Vapor Deposition
Mems
Rf Engineering
Silicon
Research and Development
Semiconductor Process
Optics
Fiber Optics
Nanotechnology
Nanomaterials
Laser Physics
Interests:
Golf
Tennis
Languages:
English
Korean

Publications

Us Patents

Mixing Frequency At Multiple Feeding Points

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US Patent:
8312839, Nov 20, 2012
Filed:
Mar 24, 2010
Appl. No.:
12/730886
Inventors:
Jonghoon Baek - San Jose CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
C23C 16/50
US Classification:
118723MW, 118723 R, 31511121
Abstract:
Embodiments disclosed herein generally relate to obtaining a substantially uniform plasma distribution within a large area processing chamber. For large area processing chambers that utilize RF voltages, standing waves can lead to deposition and/or etching non-uniformities. By applying RF voltage in at least two separate locations at two separate, but close frequencies with or without phase modulation, the wave interference pattern moves across the electrode. By moving the standing wave across the electrode, the plasma generated in the chamber can, over time, be substantially uniform.

Rf Return Path For Large Plasma Processing Chamber

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US Patent:
20100089319, Apr 15, 2010
Filed:
Oct 9, 2009
Appl. No.:
12/576991
Inventors:
Carl A. Sorensen - Morgan Hill CA, US
John M. White - Hayward CA, US
Jozef Kudela - Sunnyvale CA, US
Jonghoon Baek - San Jose CA, US
Steve McPherson - Menlo Park CA, US
Soo Young Choi - Fremont CA, US
Robin L. Tiner - Santa Cruz CA, US
Assignee:
APPLIED MATERIALS, INC. - Santa Clara CA
International Classification:
C23C 16/00
US Classification:
118723 E
Abstract:
A method and apparatus having a RF return path with low impedance coupling a substrate support to a chamber wall in a plasma processing system is provided. In one embodiment, a processing chamber includes a chamber body having a chamber sidewall, a bottom and a lid assembly supported by the chamber sidewall defining a processing region, a substrate support disposed in the processing region of the chamber body, a shadow frame disposed on an edge of the substrate support assembly, and a RF return path having a first end coupled to the shadow frame and a second end coupled to the chamber sidewall.

Off-Center Ground Return For Rf-Powered Showerhead

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US Patent:
20110126405, Jun 2, 2011
Filed:
Sep 28, 2010
Appl. No.:
12/892892
Inventors:
Jonghoon Baek - San Jose CA, US
Beom Soo Park - San Jose CA, US
Sam Hyungsam Kim - San Ramon CA, US
International Classification:
H01R 43/00
H01L 21/02
US Classification:
29825, 15634534, 118723 E
Abstract:
An electrical ground () of an RF impedance matching network () is connected to a connection area () on the grounded chamber cover () of a plasma chamber. The connection area is offset away from the center of the chamber cover toward a workpiece passageway (). Alternatively, an RF power supply () has an electrically grounded output () that is connected to a connection area () on the chamber cover having such offset. Alternatively, an RF transmission line () has an electrically grounded conductor () that is connected between a grounded output of an RF power supply and a connection area () on the chamber cover having such offset.

Balancing Rf Bridge Assembly

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US Patent:
20110185972, Aug 4, 2011
Filed:
Jan 26, 2011
Appl. No.:
13/014113
Inventors:
Jonghoon Baek - San Jose CA, US
Sam H. Kim - San Ramon CA, US
Beom Soo Park - San Jose CA, US
Assignee:
APPLIED MATERIALS, INC. - SANTA CLARA CA
International Classification:
C23C 16/505
C23C 16/455
US Classification:
118723 R
Abstract:
Embodiments disclosed herein generally relate to a PECVD apparatus. When the RF power source is coupled to the electrode at multiple locations, the current and voltage may be different at the multiple locations. In order to ensure that both the current and voltage are substantially identical at the multiple locations, an RF bridge assembly may be coupled between the multiple locations at a location just before connection to the electrode. The RF bridge assembly substantially equalizes the voltage distribution and current distribution between multiple locations. Therefore, a substantially identical current and voltage is applied to the electrode at the multiple locations.

Anti-Arc Zero Field Plate

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US Patent:
20110197814, Aug 18, 2011
Filed:
Dec 30, 2010
Appl. No.:
12/982843
Inventors:
JONGHOON BAEK - San Jose CA, US
Edwin C. Suarez - Fremont CA, US
Tsutomu Tanaka - Santa Clara CA, US
Jeonghoon Oh - San Jose CA, US
Assignee:
APPLIED MATERIALS, INC. - Santa Clara CA
International Classification:
C23C 4/00
US Classification:
118723 E
Abstract:
Embodiments of the present invention generally relate to apparatus for reducing arcing and parasitic plasma in substrate processing chambers. The apparatus generally include a processing chamber having a substrate support, a backing plate, and a showerhead disposed therein. A showerhead suspension electrically couples the backing plate to the showerhead. An electrically conductive bracket is coupled to the backing plate and spaced apart from the showerhead. The electrically conductive bracket may include a plate, a lower portion, an upper portion, and a vertical extension. The electrically conductive bracket contacts an electrical isolator.

Tightly Fitted Ceramic Insulator On Large Area Electrode

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US Patent:
20110284100, Nov 24, 2011
Filed:
May 18, 2011
Appl. No.:
13/110184
Inventors:
JOZEF KUDELA - SUNNYVALE CA, US
JONGHOON BAEK - SAN JOSE CA, US
JOHN M. WHITE - HAYWARD CA, US
ROBIN TINER - SANTA CRUZ CA, US
SUHAIL ANWAR - SAN JOSE CA, US
GAKU FURUTA - SUNNYVALE CA, US
Assignee:
APPLIED MATERIALS, INC. - SANTA CLARA CA
International Classification:
F16L 3/00
US Classification:
137343
Abstract:
Embodiments of the invention generally include shield frame assembly for use with a showerhead assembly, and a showerhead assembly having a shield frame assembly that includes an insulator that tightly fits around the perimeter of a showerhead in a vacuum processing chamber. In one embodiment, a showerhead assembly includes a gas distribution plate and a multi-piece frame assembly that circumscribes a perimeter edge of the gas distribution plate. The multi-piece frame assembly allows for expansion of the gas distribution plate without creating gaps which may lead to arcing. In other embodiments, the insulator is positioned to be have the electric fields concentrated at the perimeter of the gas distribution plate located therein, thereby reducing arcing potential.

Plasma Monitoring And Minimizing Stray Capacitance

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US Patent:
20130071581, Mar 21, 2013
Filed:
Sep 19, 2012
Appl. No.:
13/622955
Inventors:
Jonghoon Baek - San Jose CA, US
Sam H. Kim - San Ramon CA, US
Beom Soo Park - San Jose CA, US
John M. White - Hayward CA, US
Shinichi Kunita - San Jose CA, US
Hsiao-Lin Yang - San Jose CA, US
International Classification:
H05H 1/46
US Classification:
427569, 31511121
Abstract:
The present invention generally relates to a capacitively coupled plasma (CCP) processing chamber, a manner to reduce or prevent stray capacitance, and a manner to measure plasma conditions within the processing chamber. As CCP processing chambers increase in size, there is a tendency for stray capacitance to negatively impact the process. Additionally, RF ground straps may break. By increasing the spacing between the chamber backing plate and the chamber wall, stray capacitance may be minimized. Additionally, the plasma may be monitored by measuring the conditions of the plasma at the backing plate rather than at the match network. In so measuring, the plasma harmonic data may be analyzed to reveal plasma processing conditions within the chamber.

Semiconductor Processing With Dc Assisted Rf Power For Improved Control

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US Patent:
20140057447, Feb 27, 2014
Filed:
Mar 14, 2013
Appl. No.:
13/829669
Inventors:
Applied Materials, Inc. - , US
Xinglong Chen - San Jose CA, US
Soonam Park - Mountain View CA, US
Jonghoon Baek - San Jose CA, US
Saurabh Garg - Santa Clara CA, US
Shankar Venkataraman - Santa Clara CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 21/3065
H01L 21/67
US Classification:
438711, 15634544
Abstract:
Semiconductor processing systems are described including a process chamber. The process chamber may include a lid assembly, grid electrode, conductive insert, and ground electrode. Each component may be coupled with one or more power supplies operable to produce a plasma within the process chamber. Each component may be electrically isolated through the positioning of a plurality of insulation members. The one or more power supplies may be electrically coupled with the process chamber with the use of switching mechanisms. The switches may be switchable to electrically couple the one or more power supplies to the components of the process chamber.
Jonghoon Baek from San Diego, CA, age ~54 Get Report