Jong S Kim

7766495, Aug 3, 2010

Jun 24, 2008

12/213791

Martin F. Schubert - Troy NY, US
Sameer Chhajed - Troy NY, US
Jong Kyu Kim - Watervliet NY, US
E. Fred Schubert - Troy NY, US
Jaehee Cho - Suwon-si, KR

Samsung LED Co., Ltd. - Suwon

F21V 7/00

362 19, 36229607, 362347, 257 98

A light-emitting device including a light source that exhibits polarization anisotropy and a reflector that is shaped so that for light emitted in at least two directions from the light source, the angle between the dominant polarization directions after reflecting from the reflector is smaller than the angle between the dominant polarization directions before reflecting from the reflector. In the light-emitting device the light source may be a light-emitting diode chip or one of a plurality of light sources.

7819557, Oct 26, 2010

Jun 24, 2008

12/213790

Martin F. Schubert - Troy NY, US
Sameer Chhajed - Troy NY, US
Jong Kyu Kim - Watervliet NY, US
E. Fred Schubert - Troy NY, US
Cheolsoo Sone - Suwon-si, KR

Rensselaer Polytechnic Institute - Troy NY
Samsung Electro-Mechanics Co., Ltd. - Suwon

F21V 3/00
F21V 5/00

36231102, 362 19, 362255, 362293, 36231106, 257100

The light-emitting device includes a light source and a transparent encapsulating material that is shaped to modify the polarization anisotropy of light emitted by the light source in at least one direction.

8401154, Mar 19, 2013

Nov 4, 2009

12/612321

Piotr Boni - Providence RI, US
Michael Armstrong - Philadelphia PA, US
Henning Schulzrinne - Leonia NJ, US
Wonsang Song - New York NY, US
Jong Yul Kim - New York NY, US

Verizon Patent and Licensing Inc. - Basking Ridge NJ

H04M 11/04
H04N 7/52
H04W 4/12

379 45, 370352, 379 85, 455 6711, 4554041, 4554042, 455466, 600316, 709204, 709206, 709227, 715753, 715758, 725 33

A system includes one or more devices connected to or within one of a group of emergency services networks. The one or more devices may generate a text message that includes information identifying a user device, information identifying a geographic location of the user device, and information identifying a particular emergency services network of the group of emergency services networks; establish, based on the text message, a text-based communication session between the user device and a call taker device within the particular emergency services network; store session information regarding the text-based communication session; receive a subsequent text message; and transmit the subsequent text message to the call taker device based on the session information.

8502266, Aug 6, 2013

Sep 8, 2010

12/923195

Min-Ho Kim - Gyunggi-do, KR
Martin F. Schubert - Troy NY, US
Jong Kyu Kim - Watervliet NY, US
E. Fred Schubert - Troy NY, US
Yongjo Park - Gyunggi-do, KR
Cheolsoo Sone - Gyunggi-do, KR
Sukho Yoon - Seoul, KR

Samsung Electronics Co., Ltd. - Suwon-Si
Rensselaer Polytechnic Institute - Troy NY

H01L 33/00

257103

A nitride semiconductor light emitting device includes n-type and p-type nitride semiconductor layers, and an active layer disposed between the n-type and p-type nitride semiconductor layers and having a stack structure in which a plurality of quantum barrier layers and one or more quantum well layers are alternately stacked. A net polarization of the quantum barrier layer is smaller than or equal to a net polarization of the quantum well layer. A nitride semiconductor light emitting device can be provided, which can realize high efficiency even at high currents by minimizing the net polarization mismatch between the quantum barrier layer and the quantum well layer. Also, a high-efficiency nitride semiconductor light emitting device can be achieved by reducing the degree of energy-level bending of the quantum well layer.

8546846, Oct 1, 2013

Mar 9, 2011

13/064186

Min-Ho Kim - Gyunggi-do, KR
Martin F. Schubert - Troy NY, US
Jong Kyu Kim - Watervliet NY, US
F. Fred Schubert - Troy NY, US
Yongio Park - Gyunggi-do, KR
Cheolsoo Sone - Gyunggi-do, KR
Sukho Yoon - Seoul, KR

Samsung Electronics Co., Ltd. - Suwon
Rensselaer Polytechnic Institute - Troy NY

H01L 33/00

257103

A nitride semiconductor light emitting device includes n-type and p-type nitride semiconductor layers; an active layer disposed between the n-type and p-type nitride semiconductor layers and having a structure in which a plurality of quantum barrier layers and one or more quantum well layers are alternately stacked; and an electron blocking layer disposed between the active layer and the p-type nitride semiconductor layer. The electron blocking layer has a superlattice structure in which two or more layers having different compositions are alternately stacked. An absolute value of a net polarization mismatch between a material, the material having a composition corresponding to an average composition of the superlattice structure, and a quantum barrier layer adjacent to the electron blocking layer among the plurality of quantum barrier layers is less than ⅔ of an absolute value of a net polarization mismatch between AlGN(0

8565384, Oct 22, 2013

Jan 28, 2008

12/524034

Henning G. Schulzrinne - Leonia NJ, US
Wonsang Song - New York NY, US
Jong Yul Kim - New York NY, US

The Trustees of Columbia University in the City of New York - New York NY

H04M 11/00

379 52, 455416

Systems, methods, and media for connecting emergency communications are provided. For example, the methods can include: receiving an emergency communication at a particular public safety answering point from a caller directed to the particular public safety answering point by a location-to-service system; creating a conference on a conference system in response to the particular public safety answering point accepting the emergency communication; selecting a particular call-taker of a plurality of call-takers; sending the particular call-taker an invitation to accept the emergency communication; in response to receiving an indication that the particular call-taker has accepted the emergency communication, connecting the selected call-taker to the conference; connecting the caller to the conference; determining the location of the caller; querying the location-to-service system to identify at least one particular emergency responder of a plurality of emergency responders; and connecting at least one of the at least one particular emergency responder to the conference.

20090050874, Feb 26, 2009

Aug 20, 2008

12/195077

Min-Ho Kim - Suwon, KR
Martin F. Schubert - Troy NY, US
Jong Kyu Kim - Watervliet NY, US
E. Fred Schubert - Troy NY, US
Yongjo Park - Yongin, KR
Cheolsoo Sone - Anyang, KR
Sukho Yoon - Seoul, KR

SAMSUNG ELECTRO-MECHANICS CO., LTD. - Suwon
RENSSELAER POLYTECHNIC INSTITUTE - Troy NY

H01L 33/00

257 13, 257E33023

A nitride semiconductor light emitting device includes n-type and p-type nitride semiconductor layers, an active layer disposed between the n-type and p-type nitride semiconductor layers and having a structure in which a plurality of quantum barrier layers and one or more quantum well layers are alternately stacked, and an electron blocking layer disposed between the active layer and the p-type nitride semiconductor layer. The electron blocking layer has greater bandgap energy than a quantum barrier layer adjacent to the electron blocking layer among the plurality of quantum barrier layers, and has a net polarization equal to or smaller than that of the quantum barrier layer adjacent thereto. The nitride semiconductor light emitting device can achieve high efficiency in every current region by minimizing a net polarization mismatch between a quantum barrier layer and an electron blocking layer.

20090050875, Feb 26, 2009

Aug 20, 2008

12/195088

Min-Ho Kim - Suwon, KR
Martin F. Schubert - Troy NY, US
Jong Kyu Kim - Watervliet NY, US
E. Fred Schubert - Troy NY, US
Yongjo Park - Yongin, KR
Cheolsoo Sone - Anyang, KR
Sukho Yoon - Seoul, KR

SAMSUNG ELECTRO-MECHANICS CO., LTD. - Suwon
RENSSELAER POLYTECHNIC INSTITUTE - Troy NY

H01L 33/00

257 13, 257E3301

A nitride semiconductor light emitting device includes n-type and p-type nitride semiconductor layers, and an active layer disposed between the n-type and p-type nitride semiconductor layers and having a stack structure in which a plurality of quantum barrier layers and one or more quantum well layers are alternately stacked. A net polarization of the quantum barrier layer is smaller than or equal to a net polarization of the quantum well layer. A nitride semiconductor light emitting device can be provided, which can realize high efficiency even at high currents by minimizing the net polarization mismatch between the quantum barrier layer and the quantum well layer. Also, a high-efficiency nitride semiconductor light emitting device can be achieved by reducing the degree of energy-level bending of the quantum well layer.