Search

John E Latza

from Scranton, PA
Age ~46
Get Report
Also known as:
John E Latz, John Catza
Related to:
Chasity LatzaMolly M Reimers, 39Lillian LatzaEric Latza, 74Dawn Latza, 45Susan Latza, 81
Connected to:
Christopher K Latza, 50Dennis M Latza, 78James M Latza, 64Sabine D Latza, 54William D Latza, 69Vicki Latzel, 66Robert F Latzig, 48Carrie A Latzke, 50Heather M Latzke, 48Jeffrey S Latzke, 57

John Latza Phones & Addresses

  • Scranton, PA
  • 827 Country Place Dr, Tobyhanna, PA 18466
  • Lindenhurst, NY
  • Babylon, NY
  • Lake Worth, FL
  • Amityville, NY
  • West Palm Beach, FL
  • Brentwood, NY

Resumes

Resumes

John Latza Photo 1

Engineering And Management Consultant

View page
Location:
11 Bradish Ln, Babylon, NY 11702
Industry:
Management Consulting
Work:
Jml Associates
Engineering and Management Consultant
Skills:
Change Management
Organizational Design
Management Consulting
Strategic Planning
Business Transformation
Program Management
Leadership
Languages:
English
John Latza Photo 2

John Latza

View page
Location:
Tobyhanna, PA
Work:
Willow Run Foods, Inc. Jul 2018 - Aug 2019
Driver

Publications

Us Patents

Low Cost Method Of Fabricating Epitaxial Semiconductor Devices

View page
US Patent:
53605098, Nov 1, 1994
Filed:
Mar 8, 1993
Appl. No.:
8/021130
Inventors:
Gregory Zakaluk - Seaford NY
Dennis Garbis - Huntington Station NY
Joseph Y. Chan - Kings Park NY
John Latza - Lindenhurst NY
Lawrence LaTerza - Miller Place NY
Assignee:
GI Corporation - Hatboro PA
International Classification:
H01L 21306
US Classification:
156645
Abstract:
Significant reductions in the cost of fabrication of epitaxial semiconductor devices without sacrifice of functional characteristics is achieved by eliminating the conventional but costly polishing procedure, instead subjecting the substrate to grinding, cleaning and etching processes in which the grinding removes material from the surface to a depth of at least 65 microns and the etching further removes material to a depth of about 6-10 microns, the grinding preferably being carried out in two steps, the first being a coarse step and the second being a fine step, with the rotated grinding elements dwelling at their respective last grinding positions for a short period of time. The result is the equivalent of the prior art polishing procedure which took considerably longer to carry out and which therefore was much more costly. Complementing this grinding procedure is an improved and cost effective epitaxial process utilizing a unique two-step hydrochloric gas high temperature etch and a faster growth rate process with shorter cycle steps. In addition, oxygen control and "gettering" capabilities result in a total process improving the economics of formation of epitaxial semiconductor devices.

Gas Flow System For Cvd Reactor

View page
US Patent:
55713297, Nov 5, 1996
Filed:
Mar 28, 1995
Appl. No.:
8/411408
Inventors:
Joseph Chan - Kings Park NY
Dennis Garbis - Huntington Station NY
John Sapio - Huntington NY
John Latza - Lindenhurst NY
Assignee:
GI Corporation - Hatsboroa PA
International Classification:
C23C 1600
US Classification:
118715
Abstract:
To minimize contamination of gas flow lines and reactor surfaces from high impurity concentrations present in the CVD reactor, control of the dopant gas supply is located closely adjacent to the reactor input port and the dopant gas supply line is separately vented. First and second dopant gas supplies and a diluent gas supply are connected to branch lines which converge to form the dopant supply line. A solenoid valve is situated in the main dopant supply line as close to the input port as possible. A vent line is connected to the dopant supply line, prior to the solenoid valve. The etchant and silicon gas supplies are each connected to the reactor input by a separate supply line. The etchant and silicon gas supply lines are vented separately from the dopant gas supply line.
Control profile
John E Latza from Scranton, PA, age ~46 Get Report