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Jingbao Liu

from Castro Valley, CA
Age ~39
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Related to:
Mei L LiXuqing Liu, 29Yemei Liu, 24
Connected to:
Adela Liu, 73Alec X Liu, 38Alpha T Liu, 45Amon Y Liu, 58Andrea Y Liu, 45Anqi Liu, 39Arden K Liu, 64Ba S Liu, 62Bailu Liu, 35Ban Liu, 47

Jingbao Liu Phones & Addresses

  • 18328 Joseph Dr, Castro Valley, CA 94546 (858) 232-8458
  • El Cerrito, CA
  • Emeryville, CA
  • San Francisco, CA
  • Willimantic, CT
  • San Diego, CA
  • La Jolla, CA

Publications

Us Patents

Magnetically Enhanced Plasma Etch Process Using A Heavy Fluorocarbon Etching Gas

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US Patent:
6451703, Sep 17, 2002
Filed:
Mar 10, 2000
Appl. No.:
09/522374
Inventors:
Jingbao Liu - Sunnyvale CA
Takehiko Komatsu - Chiba, JP
Hongqing Shan - Cupertino CA
Keji Horioka - Mihama, JP
Bryan Y Pu - San Jose CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 21302
US Classification:
438710, 438711, 438714, 438723
Abstract:
An oxide etch process practiced in magnetically enhanced reactive ion etch (MERIE) plasma reactor. The etching gas includes approximately equal amounts of a hydrogen-free fluorocarbon, most preferably C F , and oxygen and a much larger amount of argon diluent gas. The magnetic field is preferably maintained above about 50 gauss and the pressure at 40 milliTorr or above with chamber residence times of less than 70 milliseconds. A two-step process may be used for etching holes with very high aspect ratios. In the second step, the magnetic filed and the oxygen flow are reduced. Other fluorocarbons may be substituted which have F/C ratios of less than 2 and more preferably no more than 1. 6 or 1. 5.

Magnetically Enhanced Plasma Oxide Etch Using Hexafluorobutadiene

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US Patent:
6613689, Sep 2, 2003
Filed:
May 13, 2002
Appl. No.:
10/144365
Inventors:
Jingbao Liu - Sunnyvale CA
Takehiko Komatsu - Chiba, JP
Hongqing Shan - San Jose CA
Keji Horioka - Mihama, JP
Bryan Y Pu - San Jose CA
Assignee:
Applied Materials, Inc - Santa Clara CA
International Classification:
H01L 21302
US Classification:
438712, 438706, 438710, 438711, 438723
Abstract:
An oxide etch process practiced in a plasma etch reactor, such as a magnetically enhanced reactive ion etch (MERIE) reactor. The etching gas includes approximately equal amounts of a hydrogen-free fluorocarbon, most preferably C F , and oxygen and a much larger amount of argon diluent gas. The magnetic field is preferably maintained above about 50 gauss and the pressure at 40 milliTorr or above with chamber residence times of less than 70 milliseconds. A two-step process may be used for etching holes with very high aspect ratios. In the second step, the magnetic filed and the oxygen flow are reduced. Other fluorocarbons may be substituted which have F/C ratios of less than 2 and more preferably no more than 1. 6 or 1. 5.

Flash Step Preparatory To Dielectric Etch

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US Patent:
6787475, Sep 7, 2004
Filed:
Jun 5, 2002
Appl. No.:
10/163812
Inventors:
Zhuxu Wang - Cupertino CA, 95014
Jingbao Liu - Sunnyvale CA, 94087
Claes H. Bjorkman - Mountain View CA, 94041
Bryan Pu - San Jose CA, 95135
International Classification:
H01L 21302
US Classification:
438710, 438712, 438714, 438717, 438723, 438724
Abstract:
A dielectric plasma etch method particularly useful for assuring that residue does not form in large open pad areas used for monitoring etching of narrow via and contact holes. The main dielectric etch of the via and contact holes uses a highly polymerizing chemistry, preferably of a low-F/C fluorocarbon such as C F in conjunction with O and Ar. A short flash step precedes the main plasma etch using a plasma of a gas less polymerizing than the gas of the main etch, and the plasma is not extinguished between the flash and main steps. The flash step may be used to remove an anti-reflection coating (ARC) covering the dielectric layer and use a lean fluorocarbon, such as CF , perhaps together with O and Ar. In the absence of ARC, an argon flash may be used.

Ashable Layers For Reducing Critical Dimensions Of Integrated Circuit Features

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US Patent:
7105442, Sep 12, 2006
Filed:
May 22, 2002
Appl. No.:
10/154532
Inventors:
Hongching Shan - Cupertino CA, US
Kenny L. Doan - San Jose CA, US
Jingbao Liu - Sunnyvale CA, US
Michael S. Barnes - San Ramon CA, US
Hong D. Nguyen - San Jose CA, US
Christopher Dennis Bencher - San Jose CA, US
Christopher S. Ngai - Burlingame CA, US
Wendy H. Yeh - Mountain View CA, US
Eda Tuncel - Menlo Park CA, US
Claes H. Bjorkman - Mountain View CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 21/44
H01L 21/31
H01L 21/469
US Classification:
438681, 438758
Abstract:
A method is described for decreasing the critical dimensions of integrated circuit features in which a first masking layer () is deposited, patterned and opened in the manner of typical feature etching, and a second masking layer () is deposited thereon prior to etching the underlying insulator. The second masking layer is advantageously coated in a substantially conformal manner. Opening the second masking layer while leaving material of the second layer on the sidewalls of the first masking layer as spacers leads to reduction of the feature critical dimension in the underlying insulator. Ashable masking materials, including amorphous carbon and organic materials are removable without CMP, thereby reducing costs. Favorable results are also obtained utilizing more than one masking layer () underlying the topmost masking layer () from which the spacers are formed. Embodiments are also described in which slope etching replaces the addition of a separate spacer layer.

Apparatus For Uniformly Etching A Dielectric Layer

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US Patent:
7316761, Jan 8, 2008
Filed:
Feb 3, 2003
Appl. No.:
10/357652
Inventors:
Kenny L. Doan - San Jose CA, US
Yunsang Kim - San Jose CA, US
Mahmoud Dahimene - Gaithersburg MD, US
Jingbao Liu - Sunnyvale CA, US
Bryan Pu - San Jose CA, US
Hongqing Shan - Cupertino CA, US
Don Curry - Meridian ID, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 21/306
H01L 21/3065
C23C 16/00
C23C 16/455
C23C 16/50
C23C 16/503
US Classification:
15634547, 118715, 118723 E, 15634534, 15634543
Abstract:
Apparatus for plasma etching a layer of material upon a substrate comprising an anode having a first region protruding from a second region, wherein the second region defines a plane and the first region extends from said plane. In one embodiment, at least one solenoid is disposed near the apparatus to magnetize the plasma.

Method And Apparatus For Shaping A Magnetic Field In A Magnetic Field-Enhanced Plasma Reactor

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US Patent:
7422654, Sep 9, 2008
Filed:
Feb 13, 2004
Appl. No.:
10/778933
Inventors:
Roger Alan Lindley - Santa Clara CA, US
Jingbao Liu - Sunnyvale CA, US
Bryan Y. Pu - San Jose CA, US
Keiji Horioka - Chiba, JP
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
C23F 1/00
H01L 21/306
C23C 16/00
US Classification:
15634546, 118723 E
Abstract:
A magnetic field generator which provides greater control over the magnetic field is provided. The magnetic field generator has a plurality of overlapping main magnetic coil sections for forming a magnetic field generally parallel to the top surface of the supporting member. In other embodiments, sub-magnetic coil sections are placed symmetrically around the main magnetic coil sections.

Plasma Control Using Dual Cathode Frequency Mixing And Controlling The Level Of Polymer Formation

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US Patent:
7736914, Jun 15, 2010
Filed:
Nov 29, 2007
Appl. No.:
11/947663
Inventors:
Jingbao Liu - Sunnyvale CA, US
Taeho Shin - San Jose CA, US
Bryan Y. Pu - San Jose CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 21/00
H01L 21/66
H01L 21/20
US Classification:
438 8, 438 14, 438394
Abstract:
Methods for processing a substrate in a processing chamber using dual RF frequencies are provided herein. In some embodiments, a method of processing a substrate includes forming a plasma of a polymer forming chemistry to etch a feature into a substrate disposed on a substrate support in a process chamber while depositing a polymer on at least portions of the feature being etched. A low frequency and a high frequency RF signal are applied to an electrode disposed in the substrate support. The method further includes controlling the level of polymer formation on the substrate, wherein controlling the level of polymer formation comprises adjusting a power ratio of the high frequency to the low frequency RF signal.

Halogen-Free Amorphous Carbon Mask Etch Having High Selectivity To Photoresist

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US Patent:
7807064, Oct 5, 2010
Filed:
Mar 21, 2007
Appl. No.:
11/689389
Inventors:
Jong Mun Kim - San Jose CA, US
Judy Wang - Cupertino CA, US
Ajey M. Joshi - San Jose CA, US
Jingbao Liu - Sunnyvale CA, US
Bryan Y. Pu - San Jose CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
B44C 1/22
US Classification:
216 40, 216 37, 216 58, 216 67, 216 89, 438706, 438710, 438712, 438745
Abstract:
In one embodiment of the present invention, a halogen-free plasma etch processes is used to define a feature in a multi-layered masking stack including an amorphous carbon layer. In a particular embodiment, oxygen (O), nitrogen (N), and carbon monoxide (CO) are utilized to etch the amorphous carbon layer to form a mask capable of producing sub-100 nm features in a substrate film having a reduced line edge roughness value. In another embodiment, the present invention employs an Oplasma pretreatment preceding the halogen-free amorphous carbon etch to first form an oxidized silicon region in a patterned photoresist layer to increase the selectivity of the amorphous carbon etch relative to a patterned photoresist layer containing unoxidized silicon.
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Jingbao Liu from Castro Valley, CA, age ~39 Get Report