Jee Yeon Kim

D558204, Dec 25, 2007

Jun 12, 2007

29/288497

Jee Kim - San Francisco CA, US
Gary Lau - Kowloon, HK
Andy Murrer - Alamo CA, US
Erwin Del Pinal - Albany CA, US

1402

D14403

D562917, Feb 26, 2008

Jan 31, 2007

29/272139

Erwin del Pinal - Albany CA, US
Jee Kim - San Francisco CA, US

2101

D21566

D565808, Apr 1, 2008

Feb 22, 2007

29/272986

Jee Kim - San Francisco CA, US
Gary Lau - Siu Lek Yuen Shatin, NT, HK
Erwin del Pinal - Albany CA, US

3099

D30160, D21606

D621103, Aug 3, 2010

Feb 17, 2009

29/332448

Jee Kim - San Francisco CA, US

Worldwise, Inc. - San Rafael CA

3099

D30160

8178430, May 15, 2012

Apr 8, 2009

12/420258

Jee Hwan Kim - White Plains NY, US
Stephen W. Bedell - Wappingers Falls NY, US
Siegfried Maurer - Stormville NY, US
Devendra K. Sadana - Pleasantville NY, US

International Business Machines Corporation - Armonk NY

H01L 21/265
H01L 21/425

438527, 438919, 257E21335

A method for generating n-type carriers in a semiconductor is disclosed. The method includes supplying a semiconductor having an atomic radius. Implanting an n-type dopant species into the semiconductor, which n-type dopant species has a dopant atomic radius. Implanting a compensating species into the semiconductor, which compensating species has a compensating atomic radius. Selecting the n-type dopant species and the compensating species in such manner that the size of the semiconductor atomic radius is inbetween the dopant atomic radius and the compensating atomic radius. A further method is disclosed for generating n-type carriers in germanium (Ge). The method includes setting a target concentration for the carriers, implanting a dose of an n-type dopant species into the Ge, and selecting the dose to correspond to a fraction of the target carrier concentration. Thermal annealing the Ge in such manner as to activate the n-type dopant species and to repair a least a portion of the implantation damage. Repeating the implantation and the thermal annealing until the target n-type carrier concentration has been reached.

8343863, Jan 1, 2013

Jan 25, 2012

13/357656

Jee Hwan Kim - White Plains NY, US
Stephen W. Bedell - Wappingers Falls NY, US
Siegfried Maurer - Stormville NY, US
Devendra K. Sadana - Pleasantville NY, US

International Business Machines Corporation - Armonk NY

H01L 21/265
H01L 21/336

438529, 257E21336, 25049221, 427523

A method for generating n-type carriers in a semiconductor is disclosed. The method includes supplying a semiconductor having an atomic radius. Implanting an n-type dopant species into the semiconductor, which n-type dopant species has a dopant atomic radius. Implanting a compensating species into the semiconductor, which compensating species has a compensating atomic radius. Selecting the n-type dopant species and the compensating species in such manner that the size of the semiconductor atomic radius is inbetween the dopant atomic radius and the compensating atomic radius. A further method is disclosed for generating n-type carriers in germanium (Ge). The method includes setting a target concentration for the carriers, implanting a dose of an n-type dopant species into the Ge, and selecting the dose to correspond to a fraction of the target carrier concentration. Thermal annealing the Ge in such manner as to activate the n-type dopant species and to repair a least a portion of the implantation damage. Repeating the implantation and the thermal annealing until the target n-type carrier concentration has been reached.

8476152, Jul 2, 2013

Mar 31, 2012

13/436850

Jee Hwan Kim - White Plains NY, US
Stephen W. Bedell - Wappingers Falls NY, US
Siegfried Maurer - Stormville NY, US
Devendra K. Sadana - Pleasantville NY, US

International Business Machines Corporation - Armonk NY

H01L 21/265

438514, 438919, 117936, 257E21335, 257E21336

A method includes epitaxially growing a germanium (Ge) layer onto a Ge substrate and incorporating a compensating species with a compensating atomic radius into the Ge layer. The method includes implanting an n-type dopant species with a dopant atomic radius into the Ge layer. The method includes selecting the n-type dopant species and the compensating species in such manner that the size of the Ge atomic radius is inbetween the n-type dopant atomic radius and the compensating atomic radius.

8642431, Feb 4, 2014

Apr 2, 2012

13/437036

Jee Hwan Kim - White Plains NY, US
Stephen W. Bedell - Wappingers Falls NY, US
Siegfried Maurer - Stormville NY, US
Devendra K. Sadana - Pleasantville NY, US

International Business Machines Corporation - Armonk NY

H01L 21/336

438285, 438300, 438569, 257E21431, 257E21619

A field effect transistor (FET) has a channel hosted in Ge. The FET has silicon-germanium (SiGe) source and drain formed by selective epitaxy. The SiGe source and drain exert a tensile stress onto the Ge channel. During forming of the SiGe source and drain, an n-type dopant species and a compensating species are being incorporated into the SiGe source and drain. The n-type dopant species and the compensating species are so selected that the size of the SiGe atomic radius is inbetween the dopant atomic radius and the compensating species atomic radius.