Janet M Kometani

57285063, Mar 17, 1998

Mar 11, 1996

8/614926

Janet Mihoko Kometani - Warren NJ

Lucent Technologies Inc. - Murray Hill NJ

G03C 516
G03C 1492

430311

The use of a terpolymer significantly enhances the properties of resists suitable for deep UV lithography in the manufacture of semiconductor devices. This terpolymer is one represented by the polymer formed from sulfur dioxide, an acid-sensitive monomer moiety and a monomer that imparts polarity to the final terpolymer.

59586540, Sep 28, 1999

Aug 25, 1997

8/918781

Mary Ellen Galvin-Donoghue - Titusville NJ
Francis Michael Houlihan - Millington NJ
Janet Mihoko Kometani - Warren NJ
Omkaram Nalamasu - Basking Ridge NJ
Thomas Xavier Neenan - Boston MA

Lucent Technologies Inc. - Murray Hill NJ

G03F 700

430313

A process for device fabrication is disclosed. In the process, an energy sensitive material is formed on a substrate. The energy sensitive resist material contains a polymer or a polymer blend in combination with an energy-sensitive material such as a photoacid generator. At least three substituents are distributed on the polymer blend. The first of these substituents is a hydroxyl (OH) group. The second of these substituents is an acid-sensitive or acid labile group which is cleaved in the presence of acid and replaced by an OH group. The third of these substituents forms hydrogen bonds with the first group. The ratio of the number of OH substituents relative to the number of substituents that hydrogen bond to the OH substituents (mole percent) is about 40:1 to at least about 1:1. The relative amounts of the first and third substituents is selected to provide a resist material with a glass transition temperature of at least about 60. degree. After a layer of the energy sensitive resist material is formed on the substrate, an image of a pattern is introduced into the energy-sensitive material via a patternwise exposure to radiation.

57416290, Apr 21, 1998

Oct 15, 1996

8/730560

Edwin Arthur Chandross - Murray Hill NJ
Janet Mihoko Kometani - Warren NJ
Omkaram Nalamasu - Basking Ridge NJ
Elsa Reichmanis - Westfield NJ
Kathryn Elizabeth Uhrich - Boston MA

Lucent Technologies Inc. - Murray Hill NJ

G03C 500

430326

Polymers suitable for chemically amplified resists based on styrene chemistry are advantageously formed with a meta substituent on the phenyl ring of the styrene moiety. Additionally, polymers for such applications including, but not limited to, meta substituted polymers are advantageously formed by reacting a first monomer having a first protective group with a second monomer having a second protective group. After polymerization, the second protective group is removed without substantially affecting the first protective group. For example, if the first protective group is an alkoxy carbonyl group, and the second protective group is a silyl ether group, treatment with a lower alcohol with trace amounts of acid transforms the silyl group into an OH-moiety without affecting the alkoxy carbonyl group.