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James Seruto Phones & Addresses

  • Victorville, CA
  • 410 Union Ave, Santa Maria, CA 93455
  • 1566 Avenida Colina, San Dimas, CA 91773 (626) 967-1966
  • 7056 Madera Dr, Goleta, CA 93117
  • Santa Barbara, CA
  • San Clemente, CA
  • Durham, NC
  • 1566 Avenida Colina, San Dimas, CA 91773 (909) 967-1966

Emails

Business Records

Name / Title
Company / Classification
Phones & Addresses
James Seruto
Shareholder
Encal Specialties Inc
Marketing Service · Management Consulting Services
400 N Mtn Ave, Upland, CA 91786
(626) 962-2008

Publications

Us Patents

Wafer Level Phosphor Coating Method And Devices Fabricated Utilizing Method

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US Patent:
20080173884, Jul 24, 2008
Filed:
Jan 22, 2007
Appl. No.:
11/656759
Inventors:
Ashay Chitnis - Santa Barbara CA, US
James Ibbetson - Santa Barbara CA, US
Arpan Chakraborty - Goleta CA, US
Eric J. Tarsa - Goleta CA, US
Bernd Keller - Santa Barbara CA, US
James Seruto - Orcutt CA, US
Yankun Fu - Raleigh NC, US
International Classification:
H01L 33/00
US Classification:
257 98, 438 29, 257E33061
Abstract:
Methods for fabricating light emitting diode (LED) chips comprising providing a plurality of LEDs typically on a substrate. Pedestals are deposited on the LEDs with each of the pedestals in electrical contact with one of the LEDs. A coating is formed over the LEDs with the coating burying at least some of the pedestals. The coating is then planarized to expose at least some of the buried pedestals while leaving at least some of said coating on said LEDs. The exposed pedestals can then be contacted such as by wire bonds. The present invention discloses similar methods used for fabricating LED chips having LEDs that are flip-chip bonded on a carrier substrate and for fabricating other semiconductor devices. LED chip wafers and LED chips are also disclosed that are fabricated using the disclosed methods.

Wafer Level Phosphor Coating Method And Devices Fabricated Utilizing Method

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US Patent:
20080179611, Jul 31, 2008
Filed:
Sep 7, 2007
Appl. No.:
11/899790
Inventors:
Ashay Chitnis - Goleta CA, US
James Ibbetson - Santa Barbara CA, US
Bernd Keller - Santa Barbara CA, US
David T. Emerson - Chapel Hill NC, US
John Edmond - Cary NC, US
Michael J. Bergmann - Chapel Hill NC, US
Jasper S. Cabalu - Cary NC, US
Jeffrey C. Britt - Cary NC, US
Arpan Chakraborty - Goleta CA, US
Eric Tarsa - Goleta CA, US
James Seruto - Goleta CA, US
Yankun Fu - Raleigh NC, US
International Classification:
H01L 33/00
US Classification:
257 98, 438 27, 257E33061
Abstract:
Methods for fabricating light emitting diode (LED) chips comprising providing a plurality of LEDs typically on a substrate. Pedestals are deposited on the LEDs with each of the pedestals in electrical contact with one of the LEDs. A coating is formed over the LEDs with the coating burying at least some of the pedestals. The coating is then planarized to expose at least some of the buried pedestals while leaving at least some of said coating on said LEDs. The exposed pedestals can then be contacted such as by wire bonds. The present invention discloses similar methods used for fabricating LED chips having LEDs that are flip-chip bonded on a carrier substrate and for fabricating other semiconductor devices. LED chip wafers and LED chips are also disclosed that are fabricated using the disclosed methods.

Saturated Phosphor Solid State Emitter

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US Patent:
20040012027, Jan 22, 2004
Filed:
Jun 12, 2003
Appl. No.:
10/461561
Inventors:
Bernd Keller - Santa Barbara CA, US
James Ibbetson - Santa Barbara CA, US
Yankun Fu - Santa Barbara CA, US
James Seruto - Goleta CA, US
Jayesh Bharathan - Cary NC, US
Assignee:
CREE LIGHTING COMPANY
International Classification:
H01L027/15
US Classification:
257/079000
Abstract:
A high efficiency, high yield solid state emitter package is disclosed exhibiting limited wavelength variations between batches and consistent wavelength and emission characteristics with operation. One embodiment of an emitter package according to the present invention comprises a semiconductor emitter and a conversion material. The conversion material is arranged to absorb substantially all of the light emitting from the semiconductor emitter and re-emit light at one or more different wavelength spectrums of light The conversion material is also arranged so that there is not an excess of conversion material to block the re-emitted light as it emits from the emitter package. The emitter package emitting light at one or more wavelength spectrums from the conversion material's re-emitted light. The semiconductor emitter is preferably a light emitting diode (LED) or laser diode
James Byron Seruto from Victorville, CA, age ~47 Get Report