James T Degenford

53251296, Jun 28, 1994

Jun 7, 1993

8/072388

Howell G. Henry - Baltimore MD
Russell R. Shaller - Brooklyn Park MD
Ronald G. Freitag - Baltimore MD
Marvin Cohn - Baltimore MD
David A. Blackwell - Jessup MD
James E. Degenford - Dayton MD

Westinghouse Electric Corporation - Pittsburgh PA

H04N 544

348571

The present invention provides a monolithic superheterodyne detector pixel operable to receive a radio frequency (RF) signal at millimeter wavelength and produce a video output signal with many orders of improved sensitivity when compared with the prior art. This sensitivity improvement is achieved by translating the received RF signal to a intermediate frequency (IF) signal before detection of the video signal. At the lower frequency of the IF signal, monolithic amplification circuitry can be fabricated more easily to provide necessary gain than would be achievable if simple amplification of the RF signal were attempted. Detector pixels constructed in accordance with the invention each contain an antenna for receiving the RF signal. Local oscillator (LO) signal circuitry likewise apply an externally generated LO signal to the pixel. The RF signal and LO signal are then applied by interconnecting conductors to appropriate mixer means to produce the IF signal.

61917540, Feb 20, 2001

Mar 18, 1999

9/271833

Harvey C. Nathanson - Pittsburgh PA
Thomas J. Smith - Greensburgh PA
Carl B. Freidhoff - New Freedom PA
F. William Hopwood - Severna Park MD
James E. Degenford - Ellicott City MD
J. Douglas Adam - Murrysville PA

Northrop Grumman Corporation - Los Angeles CA

H01Q 324

343876

An electronically steerable antenna array which includes time delay units connected to individual antenna elements for time delaying a microwave signal to and/or from the antenna elements. Each time delay unit includes small mercury wetted switches for controlling signal flow via a time delay path or a bypass path, through the time delay unit from a signal input to a signal output.

46125205, Sep 16, 1986

Jun 3, 1985

6/740355

Daniel C. Boire - Ferndale MD
James E. Degenford - Ellicott City MD
Marvin Cohn - Baltimore MD

Westinghouse Electric Corp. - Pittsburgh PA

H01P 118

333156

A wideband 180-degree digital phase shifter bit is provided which is operable independently of input rf frequency over a predetermined bandwidth of interest. The phase shifter bit comprises a coupled transmission line segment and a pi network segment, with switching means for alternatively connecting the rf input and rf output first to the coupled transmission line segments, and then to the pi network.

47499699, Jun 7, 1988

Jul 17, 1987

7/075190

Daniel C. Boire - Ferndale MD
James E. Degenford - Ellicott City MD

Westinghouse Electric Corp. - Pittsburgh PA

H01P 522

333120

A hybrid ring structure 180. degree. phase shifting apparatus or device capable of taking a single electrical input signal of predetermined frequency, splitting said signal into two isolated independent output signals utilizing engraving upon the substrate on one side only wherein said device is fully operable and compatible to operate in hybrid micro-electronic functions.

59126060, Jun 15, 1999

Aug 18, 1998

9/135747

Harvey C. Nathanson - Pittsburgh PA
Thomas J. Smith - Greensburgh PA
Carl B. Freidhoff - Murrysville PA
F. William Hopwood - Severna Park MD
James E. Degenford - Ellicott City MD
J. Douglas Adam - Murrysville PA

Northrop Grumman Corporation - Los Angeles CA

H01H 2900

335 47

A switch having spaced apart conductors with a high resistivity gate member therebetween. First and second mercury droplets are respectively connected to the ends of the conductors. When a control signal is applied to the gate member, the mercury droplets are drawn to it and establish electrical connection between the conductors to close the switch. Upon removal of the control signal the mercury droplets separate and assume their initial droplet form thus opening the switch.

52528421, Oct 12, 1993

Jul 26, 1991

7/736670

Daniel C. Buck - Hanover MD
James E. Degenford - Dayton MD
Soong H. Lee - Seoul, KR
Scott A. Imhoff - Pasadena MD
Dale E. Dawson - Glen Burnie MD

Westinghouse Electric Corp. - Pittsburgh PA

H01L 2980
H01L 2964
H01L 29205
H01L 2906

257280

A semiconductor device has material removed from the back of the substrate and a manufacturing process is provided for manufacturing these devices. In the exemplary embodiment, a GaAs FET chip is formed by a process including the step of etching the GaAs substrate from the back of the chip in a defined removal region to reduce the dielectric constant in the region of the source-to-drain path. A buffer layer of differing material provided between the active layers and the substrate prevents etching of the active layers during the removal process. To allow simplified etching patterns, the source-to-drain path may be laid out on the surface of the chip in a variety of patterns, including "packed" patterns concentrating a large path area in a small surface area of the chip. Optionally, this buffer layer may also be etched away in a further processing step. An insulating layer of material may be added to the back side of the chip in the etched region to increase structural strength, and a pressure relief ventilation path may be provided connecting the removal region to the outside at an edge or at the surface of the chip.

45786291, Mar 25, 1986

Sep 9, 1983

6/530809

James E. Degenford - Ellicott City MD
Daniel C. Boire - Ferndale MD

Westinghouse Electric Corp. - Pittsburgh PA

H03F 326

323217

A phase inverter generates two signals 180. degree. out-of-phase at microwave frequencies in response to an input microwave signal incorporating a semiconductor substrate such as gallium arsenide, a transistor having a drain, source and gate electrode, an ion-implanted resistor coupled between the drain electrode and a voltage source, a second ion-implanted resistor coupled between the source electrode and ground potential, a compensation network such as a capacitor coupled between the source electrode and ground potential, and a biasing network for establishing a bias voltage on the gate electrode. The phase inverter which may be monolithic overcomes the problem of the size of quarter wavelength slot lines to generate signals with 180. degree. phase relationship.

45477450, Oct 15, 1985

Feb 28, 1983

6/470650

Ronald G. Freitag - Ellicott City MD
James E. Degenford - Ellicott City MD
Daniel C. Boire - Glen Burnie MD

Westinghouse Electric Corp. - Pittsburgh PA

H03F 360
H03F 316
H01P 512

330286

A power combiner has been described incorporating N transmission lines each having a quarter wavelength or multiple thereof for a frequency within a predetermined frequency range where the input of each transmission line has a resistor coupled thereto with the other ends of the resistors coupled together using inductance and capacitance to compensate for the distances between the resistors to provide a floating node which is low impedance in the predetermined frequency range. A composite amplifier is described on gallium arsenide wherein a power divider and power combiner are coupled to a plurality of MESFET's and wherein each input and output of the power combiner and power divider have a resistive load with respect to the MESFET while including a matching circuit and wherein each input of the combiner has a resistor coupled to a first floating node and each output of the divider has a resistor coupled to a second floating node. The invention overcomes the problem of a composite amplifier where many elemental amplifiers must be driven and their output signals combined at frequencies where the physical layout would provide phase differences such as in a layout of parallel cells on a flat surface of a substrate.