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Ian S Currier

from Muncie, IN
Age ~50
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Also known as:
Ian Scott Currier, Ian S Currire, Ian S Cirrier, Charles Vesely, Ian R, Jon Lindberg
Related to:
Denise M Vesely, 61Crystal N Vesely, 35Matthew P Snow, 48Shannon M Vesely, 32Alexis R Snow, 45Charles R Vesely, 37Benjamin D Masters, 43Erika A Rankin, 53David A Masters, 77Robert J Vesely, 82Helen M Currier
Connected to:
Alfred J Currier, 96Angela M Currier, 38Angeline M Currier, 97Annette C Currier, 80Austin Currier, 33Brandi Currier, 33Brendan M Currier, 40Briana L Currier, 38Bridget M Currier, 59Carolyn M Currier, 84

Ian Currier Phones & Addresses

  • Muncie, IN
  • 3309 Donner Trl, Wake Forest, NC 27587 (847) 970-0494
  • Van Nuys, CA
  • Ruskin, FL
  • Butler, PA
  • Lake Bluff, IL
  • Schaumburg, IL
  • Wesley Chapel, FL
  • Brandon, FL
  • Flanders, NJ
  • 225 Beechwood Blvd, Butler, PA 16001

Work

Company: Ii-vi incorporated Oct 2007 Position: Pcvd process engineer

Education

School / High School: United States Military Academy at West Point 1992 to 1996

Industries

Semiconductors

Resumes

Resumes

Ian Currier Photo 1

Pcvd Process Engineer

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Location:
3309 Donner Trl, Wake Forest, NC 27587
Industry:
Semiconductors
Work:
Ii-Vi Incorporated
Pcvd Process Engineer
Ii-Vi Wbg Jul 2006 - Sep 2007
Senior Fabrication Engineer
United States Air Force 1996 - 2001
Program Engineer
Education:
United States Military Academy at West Point 1992 - 1996

Publications

Us Patents

Highly Twinned, Oriented Polycrystalline Diamond Film And Method Of Manufacture Thereof

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US Patent:
20190326030, Oct 24, 2019
Filed:
Jul 3, 2019
Appl. No.:
16/502590
Inventors:
- Saxonburg PA, US
Chao Liu - Butler PA, US
Charles J. Kraisinger - Saxonburg PA, US
Charles D. Tanner - Saxonburg PA, US
Ian Currier - Butler PA, US
David Sabens - Harmony PA, US
Elgin E. Eissler - Renfrew PA, US
Thomas E. Anderson - Morristown NJ, US
International Classification:
H01B 1/04
C23C 16/52
C01B 32/25
C23C 16/27
Abstract:
In a method of chemical vapor deposition (CVD) growth of a polycrystalline diamond film in a CVD reactor, a gas mixture of gaseous hydrogen and a gaseous hydrocarbon is introduced into the CVD reactor. A plasma formed from the gas mixture is maintained above a surface of a conductive substrate disposed in the CVD reactor and causes a polycrystalline diamond film to grow on the surface of the conductive substrate. A temperature T at the center of the polycrystalline diamond film is controlled during growth of the polycrystalline diamond film. The CVD grown polycrystalline diamond film includes diamond crystallites that can have a percentage of orientation along a [110] diamond lattice direction≥70% of the total number of diamond crystallites forming the polycrystalline diamond film.

Highly Twinned, Oriented Polycrystalline Diamond Film And Method Of Manufacture Thereof

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US Patent:
20160130725, May 12, 2016
Filed:
Aug 4, 2015
Appl. No.:
14/817704
Inventors:
- Saxonburg PA, US
Chao Liu - Butler PA, US
Charles J. Kraisinger - Saxonburg PA, US
Charles D. Tanner - Saxonburg PA, US
Ian Currier - Butler PA, US
David Sabens - Harmony PA, US
Elgin E. Eissler - Renfrew PA, US
Thomas E. Anderson - Morristown NJ, US
International Classification:
C30B 28/14
C30B 29/60
C30B 29/04
C01B 31/06
H01B 1/04
Abstract:
In a method of chemical vapor deposition (CVD) growth of a polycrystalline diamond film in a CVD reactor, a gas mixture of gaseous hydrogen and a gaseous hydrocarbon is introduced into the CVD reactor. A plasma formed from the gas mixture is maintained above a surface of a conductive substrate disposed in the CVD reactor and causes a polycrystalline diamond film to grow on the surface of the conductive substrate. A temperature T at the center of the polycrystalline diamond film is controlled during growth of the polycrystalline diamond film. The CVD grown polycrystalline diamond film includes diamond crystallites that can have a percentage of orientation along a [110] diamond lattice direction ≧70% of the total number of diamond crystallites forming the polycrystalline diamond film.
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Ian S Currier from Muncie, IN, age ~50 Get Report