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Hyung Sik Ryu

from Poway, CA
Age ~58

Hyung Ryu Phones & Addresses

  • Poway, CA
  • 1114 Mcintosh Creek Dr, San Jose, CA 95120 (408) 268-0572
  • 7252 Martwood Way, San Jose, CA 95120 (408) 268-0572
  • 313 Virginia Ave, Campbell, CA 95008 (408) 374-8643
  • 530 Mansion Ct, Santa Clara, CA 95054 (408) 567-9578
  • 654 Picasso Ter, Sunnyvale, CA 94087 (408) 736-5602
  • 7252 Martwood Way, San Jose, CA 95120

Work

Position: Precision Production Occupations

Emails

r***k@yahoo.com

Professional Records

Medicine Doctors

Hyung Ryu Photo 1

Hyung S. Ryu

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Specialties:
Gynecologic Oncology, Gynecology
Work:
Institute For Gynecologic Care
227 Saint Paul St FL 6, Baltimore, MD 21202
(410) 332-9200 (phone), (410) 783-5880 (fax)
Education:
Medical School
Georgetown University School of Medicine
Graduated: 2001
Procedures:
Colposcopy
D & C Dilation and Curettage
Hysterectomy
Ovarian Surgery
Tubal Surgery
Vaccine Administration
Bladder Repair
Cystoscopy
Destruction of Lesions on the Anus
Myomectomy
Vaginal Repair
Conditions:
Endometriosis
Genital HPV
Uterine Leiomyoma
Abnormal Vaginal Bleeding
Breast Disorders
Languages:
English
Korean
Description:
Dr. Ryu graduated from the Georgetown University School of Medicine in 2001. He works in Baltimore, MD and specializes in Gynecologic Oncology and Gynecology. Dr. Ryu is affiliated with Mercy Medical Center.

Publications

Us Patents

High-Voltage Bipolar-Cmos-Dmos Integrated Circuit Devices And Modular Methods Of Forming The Same

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US Patent:
20080067585, Mar 20, 2008
Filed:
Nov 5, 2007
Appl. No.:
11/982764
Inventors:
Richard Williams - Cupertino CA, US
Donald Disney - Cupertino CA, US
Jun-Wei Chen - Saratoga CA, US
Wai Chan - Hong Kong, CN
Hyung Ryu - San Jose CA, US
Assignee:
Advanced Analogic Technologies, Inc. - Santa Clara CA
Advanced Analogic Technologies (Hong Kong) Limited - Hong Kong
International Classification:
H01L 29/78
US Classification:
257330000, 257E29258
Abstract:
All low-temperature processes are used to fabricate a variety of semiconductor devices in a substrate the does not include an epitaxial layer. The devices include a non-isolated lateral DMOS, a non-isolated extended drain or drifted MOS device, a lateral trench DMOS, an isolated lateral DMOS, JFET and depletion-mode devices, and P-N diode clamps and rectifiers and junction terminations. Since the processes eliminate the need for high temperature processing and employ “as-implanted” dopant profiles, they constitute a modular architecture which allows devices to be added or omitted to the IC without the necessity of altering the processes used to produce the remaining devices.
Hyung Sik Ryu from Poway, CA, age ~58 Get Report