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Chung Lee Phones & Addresses

  • Fremont, CA
  • Pensacola, FL
  • Newark, CA
  • Rancho Cordova, CA
  • San Francisco, CA
  • Sacramento, CA

Professional Records

Medicine Doctors

Chung Lee Photo 1

Dr. Chung H Lee, Oakland CA - MD (Doctor of Medicine)

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Specialties:
Diagnostic Radiology
Address:
110 Starview Ct, Oakland, CA 94618
Languages:
English
Hospitals:
110 Starview Ct, Oakland, CA 94618

Community Hospital
901 Macarthur Boulevard, Munster, IN 46321
Education:
Medical School
Yonsei University / College of Medicine
Chung Lee Photo 2

Dr. Chung U Lee, Oakland CA - MD (Doctor of Medicine)

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Specialties:
Pediatrics
Age:
44
Address:
280 W Macarthur Blvd, Oakland, CA 94611
(510) 752-1375 (Phone), (510) 752-1571 (Fax)
Languages:
English
Education:
Medical School
University of Illinois At Chicago / College of Medicine
Graduated: 2007
Chung Lee Photo 3

Chung S. Lee

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Specialties:
Gastroenterology, Internal Medicine
Work:
Saint Joseph's Medical GroupSaint Joseph Medical Group
2622 Lk Ave, Fort Wayne, IN 46805
(260) 422-6251 (phone), (260) 425-3604 (fax)

Saint Joseph's Medical GroupSaint Joseph Medical Group
2622 Lk Ave, Fort Wayne, IN 46805
(260) 425-3100 (phone), (260) 425-3604 (fax)
Education:
Medical School
Natl Taiwan Univ Coll of Med, Taipei, Taiwan (385 02 Prior 1/71)
Graduated: 1969
Languages:
Chinese
English
Description:
Dr. Lee graduated from the Natl Taiwan Univ Coll of Med, Taipei, Taiwan (385 02 Prior 1/71) in 1969. He works in Fort Wayne, IN and 1 other location and specializes in Gastroenterology and Internal Medicine. Dr. Lee is affiliated with Bluffton Regional Medical Center, duPont Hospital and St Joseph Hospital.
Chung Lee Photo 4

Chung K. Lee

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Specialties:
Diagnostic Radiology, Radiation Oncology
Work:
University Minnesota PhysiciansUniversity Of Minnesota Medical Center Radiation Oncology
500 Harvard St SE STE J1-140, Minneapolis, MN 55455
(612) 273-6700 (phone), (612) 273-8459 (fax)

Jane Brattain Breast Center
3850 Park Nicollet Blvd FL 4 STE 460, Minneapolis, MN 55416
(952) 993-3700 (phone), (952) 993-1750 (fax)

University Minnesota PhysiciansUniversity Minnesota Medical Center Radiation Oncology
420 Delaware St SE #M26, Minneapolis, MN 55455
(612) 626-6146 (phone), (612) 624-5445 (fax)
Education:
Medical School
Yonsei Univ, Coll of Med, Sudai Moon Ku, Seoul, So Korea
Graduated: 1965
Languages:
English
Description:
Dr. Lee graduated from the Yonsei Univ, Coll of Med, Sudai Moon Ku, Seoul, So Korea in 1965. She works in Saint Louis Park, MN and 2 other locations and specializes in Diagnostic Radiology and Radiation Oncology. Dr. Lee is affiliated with Park Nicollet Methodist Hospital, University Of Minnesota Masonic Childrens Hospital and University Of Minnesota Medical Center East Bank.
Chung Lee Photo 5

Chung Lee

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Specialties:
Genetics, Medical
Work:
Stanford Hospital Genetics
300 Pasteur Dr STE H315, Stanford, CA 94305
(650) 723-6858 (phone), (650) 498-4555 (fax)
Education:
Medical School
University of Illinois, Chicago College of Medicine
Graduated: 2008
Languages:
English
Spanish
Description:
Dr. Lee graduated from the University of Illinois, Chicago College of Medicine in 2008. She works in Stanford, CA and specializes in Genetics, Medical. Dr. Lee is affiliated with Stanford Hospital.
Chung Lee Photo 6

Chung M. Lee

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Specialties:
Anesthesiology
Work:
Houston Cypress Anesthesia LLC
10655 Steepletop Dr, Houston, TX 77065
(281) 580-9030 (phone), (281) 580-2725 (fax)
Education:
Medical School
University of Texas Medical Branch at Galveston
Graduated: 1989
Languages:
English
Spanish
Description:
Dr. Lee graduated from the University of Texas Medical Branch at Galveston in 1989. He works in Houston, TX and specializes in Anesthesiology. Dr. Lee is affiliated with Cypress Fairbanks Medical Center Hospital.
Chung Lee Photo 7

Chung Un Lee

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Specialties:
Pediatrics
Chung Lee Photo 8

Chung Hsiung Lee

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Specialties:
Anesthesiology
Education:
Chung Shan Medical University (1967)

Lawyers & Attorneys

Chung Lee Photo 9

Chung Eun Lee - Lawyer

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Licenses:
New York - Currently registered 2013
Education:
Boston College Law School
Chung Lee Photo 10

Chung Lee - Lawyer

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Office:
Lee, Tsai & Partners Attorneys-at-Law
Specialties:
Construction Law
Telecommunication Law
Cross Border Investment
Mergers and Acquisitions
Trade Law
Securities Transactions Law
Intellectual Property Law
Fair Trade Law
Consumer Protection Law
Smoking Hazard Prevention Law
Alternative Dispute Resolution
Antitrust and Trade Regulation
Communications and Media
Environmental Law
Government Contracts
ISLN:
905559535
Admitted:
1984
Law School:
National Taiwan University Law School, LL.B.; National Taiwan University Law School, LL.B.
Chung Lee Photo 11

Chung Lee - Lawyer

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Office:
Law Offices of Chung H. Lee
Specialties:
Immigration Law
Business Law
Real Estate Law
ISLN:
901659123
Admitted:
1988
University:
City College of the City University New York, B.S.E.E., 1980
Law School:
Suffolk University, J.D., 1987

Business Records

Name / Title
Company / Classification
Phones & Addresses
Mr. Chung Lee
Manager
Neo AutoWorks
Auto Body Repair & Painting. Auto Repair & Service. Auto Detailing
1220 E 12Th St, Oakland, CA 94606
(510) 533-8886
Chung Lee
Partner
LL Private Jewellers
Jewellery Designers. Jewellery Repair. Jewellers-Retail
418 736 Granville St, Vancouver, BC V6Z 1G3
(604) 683-3918
Chung Moo Lee
President
Mj Coffee, Inc
4300 Stevens Crk Blvd, San Jose, CA 95129
3787 Stevens Crk Blvd, Santa Clara, CA 95051
Chung Lee
Owner
Ozuma Restaurant
Eating Place
894 Laurel St, San Carlos, CA 94070
Chung Lee
Owner
Le's Nails
Beauty Shop
2723 Hopyard Rd, Pleasanton, CA 94588
Chung Lee
Owner
Hopyard Nails
Beauty Salons
2723 Hopyard Rd, Pleasanton, CA 94588
(925) 462-2261
Chung Hun Lee
President
SAM WOO DENTAL LAB, INC
Dental Laboratory
2586 Wyandotte St, Mountain View, CA 94043
Chung Lee
Owner
Soho Accessories
Women's Clothing Stores
865 Market St, San Francisco, CA 94103
(415) 255-3012

Publications

Us Patents

Precursors For Making Low Dielectric Constant Materials With Improved Thermal Stability

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US Patent:
6534616, Mar 18, 2003
Filed:
Apr 17, 2001
Appl. No.:
09/836815
Inventors:
Chung J. Lee - Fremont CA
Hui Wang - Fremont CA
Giovanni Antonio Foggiato - Morgan Hill CA
Assignee:
Quester Technology, Inc. - Fremont CA
International Classification:
C08G 7724
US Classification:
528 42, 528 31, 528 43, 528397, 528401, 25218211, 438780
Abstract:
Fluorinated chemical precursors, methods of manufacture, polymer thin films with low dielectric constants, and integrated circuits comprising primarily of sp CâF and some hyperconjugated sp CâF bonds are disclosed in this invention. Precursors are disclosed for creating fluorinated silanes and siloxanes, and fluorinated hydrocarbon polymers. Thermal transport polymerization (TP), chemical vapor deposition (CVD), plasma enhanced CVD (PECVD), high density PECVD (HDPCVD), photon assisted CVD (PACVD), and plasma-photon assisted (PPE) CVD and PPETP of these chemicals provides thin films with low dielectric constants and high thermal stabilities for use in the manufacture of integrated circuits.

Low Dielectric Constant Materials Prepared From Photon Or Plasma Assisted Chemical Vapor Deposition And Transport Polymerization Of Selected Compounds

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US Patent:
6663973, Dec 16, 2003
Filed:
Dec 20, 1999
Appl. No.:
09/468378
Inventors:
Chung J. Lee - Fremont CA
Hui Wang - Fremont CA
Giovanni Antonio Foggiato - Morgan Hill CA
Assignee:
Canon, USA, Inc. - Lake Success NY
International Classification:
B32B 904
US Classification:
428447, 427489, 427515, 428450
Abstract:
Intermetal dielectric (IMD) and interlevel dielectric (ILD) that have dielectric constants (K) ranging from 2. 0 to 2. 6 are prepared from plasma or photon assisted CVD (PACVD) or transport polymerization (TP). The low K dielectric (LKD) materials are prepared from PACVD or TP of some selected siloxanes and F-containing aromatic compounds. The thin films combine barrier and adhesion layer functions with low dielectric constant functions, thus eliminating the necessity for separate adhesion and barrier layers, and layers of low dielectric constant. The LKD materials disclosed in this invention are particularly useful for 0. 18 m ICs, or when copper is used as conductor in future ICs.

Dielectric Thin Films From Fluorinated Precursors

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US Patent:
6797343, Sep 28, 2004
Filed:
Dec 20, 2001
Appl. No.:
10/028198
Inventors:
Chung J. Lee - Fremont CA
Assignee:
Dielectric Systems, Inc. - Fremont CA
International Classification:
B32B 2728
US Classification:
428 11, 428421, 428500, 526244, 526251
Abstract:
New precursors and processes are disclosed for making fluorinated, low dielectric constant â thin films that have higher dimensional stability and are more rigid than fluorinated poly (para-xylylenes). The fluorinated, low dielectric constant thin films can be prepared from reactions of an ethylenic-containing precursor with benzocyclobutane-, biphenyl- and/or dieneone-containing precursors. The fluorinated, low dielectric constant thin films are useful for fabrications of future 0. 13 m integrated circuits (ICs). Using fluorinated, low-dielectric constant thin films prepared according to this invention, the integrity of the dielectric, copper (Cu) and barrier metals, such as Ta, can be kept intact; therefore improving the reliability of the IC.

Integration Of Low Thin Films And Ta Into Cu Dual Damascene

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US Patent:
6825303, Nov 30, 2004
Filed:
Feb 26, 2001
Appl. No.:
09/795217
Inventors:
Chung J. Lee - Fremont CA
Assignee:
Dielectric Systems, Inc. - Fremont CA
International Classification:
C08F 1220
US Classification:
526242, 5263481, 526346, 528244, 528401
Abstract:
New precursors and processes to generate fluorinated poly(para-xylylenes) (âPPXâ) and their chemically modified films suitable for fabrications of integrated circuits (âICsâ) of 0. 15 m are disclosed. The films so prepared have low dielectric constants (âââ) and are able to keep the integrity of the dielectric, Cu, and the barrier metal, such as Ta. Hence, the reliability of ICs can be assured.

Chemically And Electrically Stabilized Polymer Films

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US Patent:
6881447, Apr 19, 2005
Filed:
Apr 4, 2002
Appl. No.:
10/116724
Inventors:
Chung J. Lee - Fremont CA, US
Atul Kumar - Fremont CA, US
Assignee:
Dielectric Systems, Inc. - Fremont CA
International Classification:
C23C016/56
US Classification:
4272556, 42725511, 42725521, 4272481, 427309, 526346, 118724, 118725
Abstract:
Preparation methods and stabilization processes for low k polymers that consist of spC—X and HC-spC—X bonds. A preparation method is achieved by controlling the substrate temperature and feed rate of the polymer precursors. One stabilization process includes a post annealing of as-deposited polymer films under the presence of hydrogen under high temperatures. The reductive annealing of these films is conducted at temperatures from −20 C. to −50 C. to +20 C. to +50 C. of their Reversible Crystal Transformation (“CRT”) temperatures, then quenching the resulting films to −20 C. to −50 C. below their “CRT” temperatures. The reductive annealing is conducted before the as-deposited film was removed from a deposition system and still under the vacuum. “Re-stabilization” processes of polymer surfaces that are exposed to reactive plasma etching are also disclosed; thus, further coating by barrier metal, cap layer or etch-stop layer can be safely applied.

Composite Polymer Dielectric Film

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US Patent:
6962871, Nov 8, 2005
Filed:
Mar 31, 2004
Appl. No.:
10/816205
Inventors:
Chung J. Lee - Fremont CA, US
Atul Kumar - Santa Clara CA, US
Assignee:
Dielectric Systems, Inc. - Fremont CA
International Classification:
H01L021/4763
US Classification:
438624, 438628
Abstract:
An integrated circuit including a composite polymer dielectric layer formed on a substrate is disclosed, wherein the composite polymer dielectric layer includes a first silane-containing layer formed on the substrate, wherein the first silane-containing layer is formed at least partially from an organosilane material, a polymer dielectric layer formed on the first silane-containing layer, and a second silane-containing layer formed on the polymer dielectric layer. In some embodiments, the first silane-containing layer and second silane-containing layer may be formed from organosilane materials having at least one unsaturated bond capable of free radical polymerization. Systems and methods for making the disclosed integrated circuits are also provided.

Dielectric Thin Films From Fluorinated Precursors

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US Patent:
7009016, Mar 7, 2006
Filed:
Apr 5, 2004
Appl. No.:
10/818854
Inventors:
Chung J. Lee - Fremont CA, US
Assignee:
Dielectric Systems, Inc. - Fremont CA
International Classification:
C08F 214/18
B32B 27/28
US Classification:
526244, 526251, 428 11, 428421, 428500
Abstract:
New precursors and processes are disclosed for making fluorinated, low dielectric constant ∈ thin films that have higher dimensional stability and are more rigid than fluorinated poly (para-xylylenes). The fluorinated, low dielectric constant thin films can be prepared from reactions of an ethylenic-containing precursor with benzocyclobutane-, biphenyl- and/or dieneone-containing precursors. The fluorinated, low dielectric constant thin films are useful for fabrications of future

Porous Low K(<2.0) Thin Film Derived From Homo-Transport-Polymerization

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US Patent:
7026052, Apr 11, 2006
Filed:
Oct 4, 2002
Appl. No.:
10/265281
Inventors:
Chung J. Lee - Fremont CA, US
Atul Kumar - Fremont CA, US
Assignee:
Dielectric Systems, Inc. - Fremont CA
International Classification:
B32B 3/00
B32B 27/00
US Classification:
4284111, 428421, 428422, 428500
Abstract:
The present invention pertains to a processing method to produce a porous polymer film that consists of spC—X and HC-spC—X bonds (wherein, X═H or F), and exhibits at least a crystal melting temperature, (“T”). The porous polymer films produced by this invention are useful for fabricating future integrated circuits (“IC's”). The method described herein is useful for preparing the porous polymer films by polymerizing reactive intermediates, formed from a first-precursor, with a low feed rate and at temperatures equal to or below a melting temperature of intermediate (T). Second-precursors that do not become reactive intermediates or have an incomplete conversion to reactive intermediates are also transported to a deposition chamber and become an inclusion of the deposited film. By utilizing a subsequent in-situ, post treatment process the inclusions in the deposited film can be removed to leave micro-pores in the resultant film. Annealing methods are used herein to stabilize the polymer films after reactive plasma etching.

Isbn (Books And Publications)

Preparing for Korean Unification: Scenarios & Implications

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Author

Chung Min Lee

ISBN #

0833027212

Nuclear Proliferation: Risk and Responsibility

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Author

Chung Min Lee

ISBN #

0930503880

Protracted Warfare--the Third World Arena: A Dimension of U.S.-Soviet Conflict a Conference Report Sixteenth Annual Conference Held at the Royal Sonesta Hotel, Cambridge, Massachusetts, April 22-24,

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Author

Chung Min Lee

ISBN #

0895490846

Strategic Trends in Northeast Asia at Century's End

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Author

Chung Min Lee

ISBN #

8974293056

The Economic Development of Japan and Korea

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Author

Chung H. Lee

ISBN #

0275933318

The Politics of Finance in Developing Countries

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Author

Chung H. Lee

ISBN #

0801428920

Financial Systems and Economic Policy in Developing Countries

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Author

Chung H. Lee

ISBN #

0801431484

The Politics of Finance in Developing Countries

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Author

Chung H. Lee

ISBN #

0801481309

Chung Hui Lee from Fremont, CA, age ~56 Get Report