Homyar C Mogul

20110101347, May 5, 2011

Nov 5, 2009

12/613444

Brian Matthew Henderson - San Diego CA, US
Shiqun Gu - San Diego CA, US
Homyar C. Mogul - San Diego CA, US
Mark M. Nakamoto - San Diego CA, US
Arvind Chandrasekaran - San Diego CA, US

QUALCOMM INCORPORATED - San Diego CA

H01L 23/48
H01L 21/768

257 48, 438622, 257E23011, 257E21575

An interconnect sensor for detecting delamination due to coefficient of thermal expansion mismatch and/or mechanical stress. The sensor comprises a conductive path that includes a via disposed between two back end of line metal layers separated by a dielectric. The via is coupled between a first probe structure and a second probe structure and mechanically coupled to a stress inducing structure. The via is configured to alter the conductive path in response to mechanical stress caused by the stress inducing structure. The stress inducing structure can be a through silicon via or a solder ball. The dielectric material can be a low-k dielectric material. In another embodiment, a method of forming an interconnect sensor is provided for detecting delamination.

20120212245, Aug 23, 2012

Feb 1, 2012

13/364091

Angelo Pinto - San Diego CA, US
Martin L. Villafana - Bonita CA, US
You-Wen Yau - San Diego CA, US
Homyar C. Mogul - San Diego CA, US
Lavakumar Ranganathan - San Diego CA, US
Rohan V. Gupte - San Diego CA, US
Weijia Qi - San Diego CA, US
Kent J. Pingrey - San Diego CA, US
Carlos P. Aguilar - San Diego CA, US
Paul J. Giotta - Redington Beach FL, US
Leon Y. Leung - San Diego CA, US
Jina M. Antosz - Escondido CA, US
Bhupen M. Shah - Carlsbad CA, US
Choh fei Yeap - San Diego CA, US
Michael J. Campbell - Encinitas CA, US
Lawrence A. Elugbadebo - San Diego CA, US
Allen A.B. Hogan - San Diego CA, US

QUALCOMM Incorporated - San Diego CA

G01R 31/3187
H01L 23/58

3247503, 257 48, 257E23002

An integrated circuit is disclosed. The integrated circuit includes an insulating material layer. The integrated circuit also includes a metal structure. Furthermore, the integrated circuit includes a via through the insulating material layer that is coupled to the metal structure for testing insulating material by applying dynamic voltage switching to two adjacent metal components of the metal structure.