Homer Lem Phones & Addresses
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Sunnyvale, CA
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1247 Gretel Ln, Mountain View, CA 94040 (650) 965-4914
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San Jose, CA
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Santa Clara, CA
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1247 Gretel Ln, Mountain View, CA 94040 (650) 906-7168
Work
Position:
Professional/Technical
Education
Degree:
Graduate or professional degree
Emails
h***d@carterhigh.co.za
Business Records
Name / Title
Company / Classification
Phones & Addresses
Professional Engineer
ETEC SYSTEMS, INC
Mfg Misc Industry Machinery · Textile Machinery Manufacturing
Mfg Misc Industry Machinery · Textile Machinery Manufacturing
26460 Corporate Ave Ms #1250, Hayward, CA 94545
26460 Corporate Ave, Hayward, CA 94545
(408) 563-2831, (510) 783-9210
26460 Corporate Ave, Hayward, CA 94545
(408) 563-2831, (510) 783-9210
Publications
Us Patents
Method Of Improving The Uniformity Of A Patterned Resist On A Photomask
View pageUS Patent:
20050221019, Oct 6, 2005
Filed:
Apr 2, 2004
Appl. No.:
10/817140
Inventors:
Ki-Ho Baik - Pleasanton CA, US
Mark Mueller - Menlo Park CA, US
Stephen Osborne - Hayward CA, US
Robert Dean - Castro Valley CA, US
Homer Lem - Mountain View CA, US
Mark Mueller - Menlo Park CA, US
Stephen Osborne - Hayward CA, US
Robert Dean - Castro Valley CA, US
Homer Lem - Mountain View CA, US
International Classification:
G03C005/00
US Classification:
427487000
Abstract:
We have discovered that exposure of a photoresist on a photomask substrate to a vacuum after the photoresist has been exposed to imaging radiation results in improved critical dimension uniformity of the developed photoresist. Exposure of the imaged photoresist to vacuum is performed for a period of time sufficient to allow pattern critical dimensions to reach equilibrium across the photoresist. The vacuum treatment process of the invention is typically performed prior to the performance of a post-exposure bake process and prior to development of the photoresist. We have also discovered that exposure of a photoresist on a photomask substrate to a vacuum after the photoresist has been developed results in an improvement in the line edge roughness of pattern openings that have been formed through the photoresist layer thickness.