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Hisashi Masui

from Newark, CA
Age ~57
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Also known as:
Hisashi Masui Masui, L Masul
Related to:
Yoko Omuro, 55Junko Masui
Connected to:
Glenn Y Masui, 84Takeshi P Masukawa, 83Roy M Masuko, 81Phindile M Masuku, 36Erin D Masula, 42Richard Masula, 59Ronald W Masulis, 76Dennis J Masulla, 69Ignazio S Masulli, 69Anna N Masullo, 101

Hisashi Masui Phones & Addresses

  • Newark, CA
  • Fremont, CA
  • Santa Barbara, CA

Publications

Us Patents

Packaging Technique For The Fabrication Of Polarized Light Emitting Diodes

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US Patent:
7518159, Apr 14, 2009
Filed:
Jun 21, 2006
Appl. No.:
11/472186
Inventors:
Hisashi Masui - Santa Barbara CA, US
Shuji Nakamura - Santa Barbara CA, US
Steven P. DenBaars - Goleta CA, US
Assignee:
The Regents of the University of California - Oakland CA
Japan Science and Technology Agency - Saitama Prefecture
International Classification:
H01L 29/22
H01L 33/00
H01L 21/00
US Classification:
257 98, 257 81, 257 91, 257 99, 438 25, 438 26
Abstract:
A polarized light emitting diode (LED) includes a marker indicating a polarization direction. A package for the LED also includes a marker indicating the polarization direction. The markers on the LED and package are used for mutual alignment, wherein the LED is attached in a favorable orientation with respect to a package, so that the polarization direction of emitted light from the package is apparent. The marker is placed on the LED before die separation and the marker is placed on the package before alignment. The marker on the LED comprises a photolithographic pattern, an asymmetric die shape, a notch on the die, or a scratch on the die, while the marker on the package comprises an electrode shape or pattern, an asymmetric package shape, a notch on the package, or a scratch on the package. Finally, the LED or package may be installed in an external circuit or system that also indicates the polarization direction.

Packaging Technique For The Fabrication Of Polarized Light Emitting Diodes

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US Patent:
7723746, May 25, 2010
Filed:
Nov 17, 2008
Appl. No.:
12/272588
Inventors:
Hisashi Masui - Santa Barbara CA, US
Shuji Nakamura - Santa Barbara CA, US
Steven P. DenBaars - Goleta CA, US
Assignee:
The Regents of the University of California - Oakland CA
Japan Science and Technology Agency - Saitama Prefecture
International Classification:
H01L 29/22
H01L 33/00
H01L 21/00
US Classification:
257 98, 257 81, 257 91, 257 99, 438 25, 438 26
Abstract:
A polarized light emitting diode (LED) includes a marker indicating a polarization direction. A package for the LED also includes a marker indicating the polarization direction. The markers on the LED and package are used for mutual alignment, wherein the LED is attached in a favorable orientation with respect to a package, so that the polarization direction of emitted light from the package is apparent. The marker is placed on the LED before die separation and the marker is placed on the package before alignment. The marker on the LED comprises a photolithographic pattern, an asymmetric die shape, a notch on the die, or a scratch on the die, while the marker on the package comprises an electrode shape or pattern, an asymmetric package shape, a notch on the package, or a scratch on the package. Finally, the LED or package may be installed in an external circuit or system that also indicates the polarization direction.

Optimization Of Laser Bar Orientation For Nonpolar And Semipolar (Ga,Al,In,B)N Diode Lasers

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US Patent:
7839903, Nov 23, 2010
Filed:
Feb 12, 2008
Appl. No.:
12/030124
Inventors:
Robert M. Farrell - Goleta CA, US
Mathew C. Schmidt - Santa Barbara CA, US
Kwang-Choong Kim - Seoul, KR
Hisashi Masui - Santa Barbara CA, US
Daniel F. Feezell - Santa Barbara CA, US
James S. Speck - Goleta CA, US
Steven P. DenBaars - Goleta CA, US
Shuji Nakamura - Santa Barbara CA, US
Assignee:
The Regents of the University of California - Oakland CA
Japan Science and Technology Agency - Kawaguchi, Saitama Prefecture
International Classification:
H01S 3/10
US Classification:
372 9, 372 4301, 372 44011
Abstract:
Optical gain of a nonpolar or semipolar Group-III nitride diode laser is controlled by orienting an axis of light propagation in relation to an optical polarization direction or crystallographic orientation of the diode laser. The axis of light propagation is substantially perpendicular to the mirror facets of the diode laser, and the optical polarization direction is determined by the crystallographic orientation of the diode laser. To maximize optical gain, the axis of light propagation is oriented substantially perpendicular to the optical polarization direction or crystallographic orientation.

Enhancement Of Optical Polarization Of Nitride Light-Emitting Diodes By Wafer Off-Axis Cut

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US Patent:
8278128, Oct 2, 2012
Filed:
Feb 2, 2009
Appl. No.:
12/364272
Inventors:
Hisashi Masui - Santa Barbara CA, US
Hisashi Yamada - Ibaraki, JP
Kenji Iso - Fujisawa, JP
Asako Hirai - Santa Barbara CA, US
Makoto Saito - Santa Barbara CA, US
James S. Speck - Goleta CA, US
Shuji Nakamura - Santa Barbara CA, US
Steven P. DenBaars - Goleta CA, US
Assignee:
The Regents of the University of California - Oakland CA
International Classification:
H01L 21/00
US Classification:
438 46, 438 29, 438 47, 438 93, 438150, 438285, 438483, 438503, 438590, 438604, 438796
Abstract:
An off-axis cut of a nonpolar III-nitride wafer towards a polar (−c) orientation results in higher polarization ratios for light emission than wafers without such off-axis cuts. A 5 angle for an off-axis cut has been confirmed to provide the highest polarization ratio (0. 9) than any other examined angles for off-axis cuts between 0 and 27.

Optimization Of Laser Bar Orientation For Nonpolar And Semipolar (Ga,Al,In,B)N Diode Lasers

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US Patent:
8588260, Nov 19, 2013
Filed:
Oct 20, 2010
Appl. No.:
12/908463
Inventors:
Robert M. Farrell - Goleta CA, US
Mathew C. Schmidt - Santa Barbara CA, US
Kwang Choong Kim - Seoul, KR
Hisashi Masui - Santa Barbara CA, US
Daniel F. Feezell - Santa Barbara CA, US
James S. Speck - Goleta CA, US
Stephen P. DenBaars - Goleta CA, US
Shuji Nakamura - Santa Barbara CA, US
Assignee:
The Regents of the University of California - Oakland CA
International Classification:
H01S 3/10
US Classification:
372 9, 372 4301, 372 44011
Abstract:
Optical gain of a nonpolar or semipolar Group-III nitride diode laser is controlled by orienting an axis of light propagation in relation to an optical polarization direction or crystallographic orientation of the diode laser. The axis of light propagation is substantially perpendicular to the mirror facets of the diode laser, and the optical polarization direction is determined by the crystallographic orientation of the diode laser. To maximize optical gain, the axis of light propagation is oriented substantially perpendicular to the optical polarization direction or crystallographic orientation.

High Light Extraction Efficiency Light Emitting Diode (Led)

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US Patent:
7994527, Aug 9, 2011
Filed:
Nov 6, 2006
Appl. No.:
11/593268
Inventors:
Steven P. DenBaars - Goleta CA, US
Shuji Nakamura - Santa Barbara CA, US
Hisashi Masui - Santa Barbara CA, US
Natalie Nichole Fellows - Santa Barbara CA, US
Akihiko Murai - Goletz CA, US
Assignee:
The Regents of the University of California - Oakland CA
International Classification:
H01L 33/00
US Classification:
257 98, 257 95, 257 99, 257E33073, 438 29, 438 22, 362326
Abstract:
An (Al, Ga, In)N and ZnO direct wafer bonded light emitting diode (LED) combined with a shaped plastic optical element, in which the directional light from the ZnO cone, or from any high refractive index material in contact with the LED surface, entering the shaped plastic optical element is extracted to air.

Enhancement Of Optical Polarization Of Nitride Light-Emitting Diodes By Increased Indium Incorporation

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US Patent:
8044417, Oct 25, 2011
Filed:
Feb 2, 2009
Appl. No.:
12/364258
Inventors:
Hisashi Masui - Santa Barbara CA, US
Hisashi Yamada - Ibaraki, JP
Kenji Iso - Fujisawa, JP
James S. Speck - Goleta CA, US
Shuji Nakamura - Santa Barbara CA, US
Steven P. DenBaars - Goleta CA, US
Assignee:
The Regents of the University of California - Oakland CA
International Classification:
H01L 33/00
US Classification:
257 96, 257 97, 257103, 257E33023, 257E33025, 257E33028, 438 47
Abstract:
An increase in the Indium (In) content in light-emitting layers of light-emitting diode (LED) structures prepared on nonpolar III-nitride substrates result in higher polarization ratios for light emission than LED structures containing lesser In content. Polarization ratios should be higher than 0. 7 at wavelengths longer than 470 nm.

High Light Extraction Efficiency Sphere Led

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US Patent:
20080121918, May 29, 2008
Filed:
Nov 15, 2007
Appl. No.:
11/940872
Inventors:
Steven P. DenBaars - Goleta CA, US
Shuji Nakamura - Santa Barbara CA, US
Hisashi Masui - Santa Barbara CA, US
Assignee:
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA - Oakland CA
International Classification:
H01L 33/00
US Classification:
257 98, 257E33061, 257E33058
Abstract:
This invention is related to LED Light Extraction for optoelectronic applications. More particularly the invention relates to (Al, Ga, In)N combined with optimized optics for highly efficient (Al, Ga, In)N based light emitting diodes applications, and its fabrication method. A further extension is the general combination of a shaped high refractive index light extraction material combined with a sphere shaped molding.
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Hisashi Masui from Newark, CA, age ~57 Get Report