US Patent:
20060157648, Jul 20, 2006
Inventors:
Gary Siuzdak - San Diego CA, US
Eden Go - San Diego CA, US
Zhouxin Shen - San Diego CA, US
Bruce Compton - Lexington MA, US
Edouard Bouvier - Stow MA, US
Grace Credo - Foster City CA, US
Assignee:
WATERS INVESTMENTS LIMITED - New Castle DE
International Classification:
H01J 49/00
Abstract:
Embodiments of the present invention are directed to a substrate for performing ionization desorption on porous silicon, methods for performing such ionization desorption and methods of making substrates. One embodiment directed to a substrate for performing ionization desorption on silicon comprises a substrate having a surface having a formula of: As used above, X is H or Y, where at least at least twenty five mole percent of X is Y and Y is hydroxyl, or —O—Ror O—SiR,R,Rwherein R,R, and Rare selected from the group consisting Cto Cstraight, cyclic, or branched alkyl, aryl, or alkoxy group, a hydroxyl group, or a siloxane group, and Rmay be a Cto Cstraight, cyclic, or branched alkyl (e.g., Ccyanopropyl), aryl, or alkoxy group, where the groups of Rare unsubstituted or substituted with one or more moieties such as halogen, cyano, amino, diol, nitro, ether, carbonyl, epoxide, sulfonyl, cation exchanger, anion exchanger, carbamate, amide, urea, peptide, protein, carbohydrate, and nucleic acid functionalities. The letter “n” represents an integer from 1 to infinity and any vacant valences are silicon atoms, hydrogen or impurities.