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Gopal K Mor

from Perrysburg, OH
Age ~51

Gopal Mor Phones & Addresses

  • 10855 Bay Trace Dr, Perrysburg, OH 43551
  • Defiance, OH
  • 10 Vairo Blvd, State College, PA 16803 (814) 237-2738

Resumes

Resumes

Gopal Mor Photo 1

Development Engineer Iii At First Solar

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Position:
Development Engineer III at First Solar
Location:
Perrysburg, Ohio
Industry:
Renewables & Environment
Work:
First Solar - Toledo, OH since Sep 2012
Development Engineer III

Penn State University - Department of Chemical Engineering Jan 2011 - Sep 2012
Research Associate

Penn State University - Materials Research Institute Aug 2008 - Dec 2010
Research Associate & Visiting Scientist

Penn State University Aug 2002 - Jul 2008
Researcher
Education:
Indian Institute of Technology, Delhi 1996 - 2002
PhD, Physics
Gopal Mor Photo 2

Manager -Integration

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Location:
Toledo, OH
Industry:
Renewables & Environment
Work:
First Solar
Manager -Integration

First Solar Mar 2015 - Feb 2019
Development Engineer Iv

First Solar Sep 2012 - Feb 2015
Development Engineer Iii

Penn State University Jan 2011 - Sep 2012
Research Associate

Penn State University Aug 2008 - Dec 2010
Research Associate and Visiting Scientist
Education:
Indian Institute of Technology, Delhi 1996 - 2002
Doctorates, Doctor of Philosophy, Physics
Indian Institute of Technology
Skills:
Development
Energy
Gopal Mor Photo 3

Gopal Mor

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Publications

Us Patents

Titania Nanotube Arrays For Use As Sensors And Method Of Producing

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US Patent:
20050224360, Oct 13, 2005
Filed:
Apr 2, 2004
Appl. No.:
10/817354
Inventors:
Oomman Varghese - State College PA, US
Gopal Mor - State College PA, US
Maggie Paulose - State College PA, US
Craig Grimes - Boalsburg PA, US
International Classification:
C25D005/00
C25D005/48
US Classification:
205171000, 205189000, 205191000, 205192000, 205193000, 205220000, 205224000
Abstract:
An electrical resistive device for sensing hydrogen gas, including: an array of titania nanotubes open at an outwardly-directed end formed by anodizing at least a portion of a titanium layer; a plurality of palladium (or other noble metal) clusters having been deposited atop the nanotube array; and the nanotube array mechanically supported by an integral support member. The array of titania nanotubes may include a dopant in an amount less than 1% by mass. An exposure of the titania nanotube array to radiant energy emitted within a range of frequencies from visible to ultraviolet, in the presence of oxygen, removes at least a portion of a contaminant, if present on the titania nanotubes. The titanium layer may be deposited atop the integral support; or the unique doped titanium layer can be produced, prior to the anodizing thereof, by depositing titanium along with dopant atop the integral support member by a co-deposition process. The titanium layer may be a titanium foil or doped titanium foil. The device, as adapted for use to remove a contaminant (such as liquid crude petroleum, pathogens, e.g., virus, bacteria, fungi, and proteins) from the array of nanotubes, will do so photocatalytically by exposure thereof to radiant energy emitted within a range of frequencies from visible to ultraviolet, in the presence of oxygen. Also, supported is: method(s) of producing the electrical resistive devices for sensing hydrogen gas.

Photovoltaic Devices And Method Of Manufacturing

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US Patent:
20200058818, Feb 20, 2020
Filed:
Oct 25, 2019
Appl. No.:
16/664737
Inventors:
- Tempe AZ, US
Markus Gloeckler - Perrysburg OH, US
Feng Liao - Perrysburg OH, US
Andrei Los - Perrysburg OH, US
Dan Mao - Perrysburg OH, US
Benjamin Milliron - Toledo OH, US
Gopal Mor - Perrysburg OH, US
Rick Powell - Ann Arbor MI, US
Kenneth Ring - Waterville OH, US
Aaron Roggelin - Millbury OH, US
Jigish Trivedi - Perrysburg OH, US
Zhibo Zhao - Novi MI, US
Assignee:
First Solar, Inc. - Tempe AZ
International Classification:
H01L 31/073
H01L 31/20
H01L 31/18
H01L 31/0296
H01L 31/0224
Abstract:
A photovoltaic device includes a substrate structure and at least one Se-containing layer, such as a CdSeTe layer. A process for manufacturing the photovoltaic device includes forming the CdSeTe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process can also include controlling a thickness range of the Se-containing layer.

Ag-Doped Photovoltaic Devices And Method Of Making

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US Patent:
20190363201, Nov 28, 2019
Filed:
May 31, 2017
Appl. No.:
16/305455
Inventors:
- Tempe AZ, US
William H. Huber - Perrysburg OH, US
Hongying Peng - Perrysburg OH, US
Markus Gloeckler - Perrysburg OH, US
Gopal Mor - Perrysburg OH, US
Feng Liao - Perrysburg OH, US
Zhibo Zhao - Perrysburg OH, US
Andrei Los - Perrysburg OH, US
Assignee:
First Solar, Inc. - Tempe AZ
International Classification:
H01L 31/0296
H01L 31/073
H01L 31/18
Abstract:
A doped photovoltaic device is presented. The photovoltaic device includes a semiconductor absorber layer or stack disposed between a front contact and a back contact. The absorber layer comprises cadmium, selenium, and tellurium doped with Ag, and optionally with Cu. The Ag dopant may be added to the absorber in amounts ranging from 5×10/cmto 2.5×10/cmvia any of several methods of application before, during, or after deposition of the absorber layer. The photovoltaic device has improved Fill Factor and Pat higher P(=I*Vproduct) values, e.g. about 160 W, which results in improved conversion efficiency compared to a device not doped with Ag. Improved PT may result from increased I, increased V, or both.

Methods For Curing Anti-Reflective Coatings On Solar Glass

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US Patent:
20180083145, Mar 22, 2018
Filed:
Sep 19, 2017
Appl. No.:
15/708254
Inventors:
- Tempe AZ, US
David Hwang - Perrysburg OH, US
Mark Lewis - Perrysburg OH, US
Gopal Mor - Perrysburg OH, US
Nathan Martin Schuh - Perrysburg OH, US
Frank Xia - Perrysburg OH, US
Yu Yang - Perrysburg OH, US
Zhibo Zhao - Perrysburg OH, US
Assignee:
First Solar, Inc. - Tempe AZ
International Classification:
H01L 31/0216
H01L 31/18
Abstract:
Methods of curing anti-reflective coatings, and photovoltaic modules produced using the methods, are described. The methods can include liquid metal curing, plasma curing, air knife curing, and flame curing.

Photovoltaic Devices And Method Of Manufacturing

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US Patent:
20160126395, May 5, 2016
Filed:
Nov 3, 2014
Appl. No.:
14/531425
Inventors:
- Perrysburg OH, US
Markus Gloeckler - Perrysburg OH, US
Feng Liao - Perrysburg OH, US
Andrei Los - Perrysburg OH, US
Dan Mao - Perrysburg OH, US
Benjamin Milliron - Perrysburg OH, US
Gopal Mor - Perrysburg OH, US
Rick Powell - Perrysburg OH, US
Kenneth Ring - Perrysburg OH, US
Aaron Roggelin - Perrysburg OH, US
Jigish Trivedi - Perrysburg OH, US
Zhibo Zhao - Perrysburg OH, US
International Classification:
H01L 31/073
H01L 31/0296
H01L 31/18
H01L 31/0224
Abstract:
A photovoltaic device includes a substrate structure and at least one Se-containing layer, such as a CdSeTe layer. A process for manufacturing the photovoltaic device includes forming the CdSeTe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process can also include controlling a thickness range of the Se-containing layer.

Photovoltaic Devices And Method Of Manufacturing

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US Patent:
20160126396, May 5, 2016
Filed:
Jan 22, 2015
Appl. No.:
14/602340
Inventors:
- Perrysburg OH, US
Markus Gloeckler - Perrysburg OH, US
Feng Liao - Perrysburg OH, US
Andrei Los - Perrysburg OH, US
Dan Mao - Perrysburg OH, US
Benjamin Milliron - Toledo OH, US
Gopal Mor - Perrysburg OH, US
Rick Powell - Ann Arbor MI, US
Kenneth Ring - Waterville OH, US
Aaron Roggelin - Millbury OH, US
Jigish Trivedi - Perrysburg OH, US
Zhibo Zhao - Novi MI, US
International Classification:
H01L 31/073
H01L 31/18
H01L 31/20
H01L 31/0224
Abstract:
A photovoltaic device includes a substrate structure and at least one Se-containing layer, such as a CdSeTe layer. A process for manufacturing the photovoltaic device includes forming the CdSeTe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process can also include controlling a thickness range of the Se-containing layer.
Gopal K Mor from Perrysburg, OH, age ~51 Get Report