Search

Gary Lynn Woodrough

from Holt, MI
Age ~53
Get Report
Also known as:
Gary L Woodrough, Quintell Walker, Walker Quintel, Quint Crowder
Phone and address:
2225 Beechnut Trl, Holt, MI 48842
(517) 819-7713
Related to:
Marylou C WoodroughLeslie A Butkowski, 46Tonya L Woodrough, 52Denise D Hedlund, 55Carolyn M Woodrow, 65Carl R Oakley, 80Larry H Woodrough, 78Janice C Oakley, 79Harold G OakleyTerry H Woodrough, 51Cecil Cosey
Connected to:
Adele D Woodrow, 63Amanda I Woodrow, 46Ashley J Woodrow, 34Colleen F Woodrow, 61Dale A Woodrow, 69Dante Woodrow, 35Dean S Woodrow, 66Dylan S Woodrow, 32Ellen M Woodrow, 105Ivy C Woodrow, 32

Gary Woodrough Phones & Addresses

  • 2225 Beechnut Trl, Holt, MI 48842 (517) 819-7713
  • 3943 Keller Rd, Holt, MI 48842 (517) 699-1742
  • 1608 Boston Blvd, Lansing, MI 48910 (517) 482-4528
  • Troy, MI
  • Williamston, MI
  • Flint, MI
  • Southgate, MI
  • Royal Oak, MI

Resumes

Resumes

Gary Woodrough Photo 1

Product Development Manager

View page
Location:
Lansing, MI
Industry:
Packaging And Containers
Work:
Dart Container
Product Development Manager
Symmetry Medical Oct 2007 - Jun 2011
Director of Engineering
Symmetry Medical Mar 2004 - Sep 2007
Engineering Manager
Pratt & Whitney Nov 2002 - Feb 2004
Lead Engineer-Test Equipment
Education:
Michigan State University - the Eli Broad College of Business 2002 - 2003
Master of Business Administration, Masters Kettering University 1990 - 1995
Bachelors, Bachelor of Science, Mechanical Engineering
Skills:
Fmea
Continuous Improvement
Gd&T
Manufacturing
Lean Manufacturing
New Program Development
Cross Functional Team Leadership
Strategic Leadership
Value Stream Mapping
Product Design
Engineering Management
Gary Woodrough Photo 2

Gary Woodrough

View page
Location:
Lansing, MI
Industry:
Packaging And Containers
Skills:
Fmea
Value Stream Mapping
Manufacturing
Continuous Improvement
Gd&T
Lean Manufacturing
New Program Development
Product Design
Engineering Management
Cross Functional Team Leadership
Strategic Leadership

Publications

Us Patents

Tetrahedral Amorphous Carbon Coated Medical Devices

View page
US Patent:
20100211180, Aug 19, 2010
Filed:
Mar 23, 2010
Appl. No.:
12/730011
Inventors:
John Helmuth - Holt MI, US
Hans-Joachim Scheibe - Dresden, DE
Thomas Schuelke - Brighton MI, US
Gary L. Woodrough - Holt MI, US
Assignee:
JET ENGINEERING, INC. - Lansing MI
International Classification:
A61F 2/28
US Classification:
623 235, 623 2359
Abstract:
An orthopedic device having a protective coating bonded to the substrate material of the device. The protective coating includes a thin layer of tetrahedral bonded Carbon (ta-C). The substrate also optionally includes an interface layer to facilitate the initial bonding and retention of the ta-C layer. The ta-C layer has a concentration of spbonded carbon which varies through its thickness, such as varying in individual layers forming the protective coating. The protective coating may also be doped with various materials, either through its thickness, or at either an inner or an outer interface, or both, or include ion diffusion barriers.

Tetrahedral Amorphous Carbon Coated Medical Devices

View page
US Patent:
20070224242, Sep 27, 2007
Filed:
Mar 20, 2007
Appl. No.:
11/688655
Inventors:
John Helmuth - Holt MI, US
Hans-Joachim Scheibe - Dresden, DE
Thomas Schuelke - Brighton MI, US
Gary Woodrough - Holt MI, US
Assignee:
JET ENGINEERING, INC. - Lansing MI
International Classification:
A61F 2/06
US Classification:
424423000, 623001110
Abstract:
A medical device, such as an orthopedic or prosthetic joint, has a protective coating bonded to the substrate material of the device. Suitable substrate materials may include pure metals and metal alloys, ceramics, polymers and composites of the above. The protective coating includes a thin layer of tetrahedral bonded Carbon (ta-C). The coating also optionally includes an interface layer to facilitate the initial bonding and retention of the ta-C layer, such as by acting as an adhesion promoter, fluid barrier layer, or coefficient of thermal expansion mismatch reducing layer, or combination thereof. The interface layer may include various tightly adherent metals and metal nitrides, such as Cr, Ti, Nb, Ta and carbides, nitrides and carbonitrides thereof. The ta-C layer has a concentration of sp3 bonded carbon which varies through its thickness. Many concentration profiles of sp3 carbon bonds through the thickness are possible. The ta-C layer may also be doped with various materials, either through its thickness, or at either an inner or an outer interface, or both. The doping may include any suitable dopant, including various pure metals or metal alloys, bone growth substances, and dopants which alter the tribology of the ta-C layer with respect to the fluids in which it is in contact, such as dopants comprising F and N, or combinations of these materials.
Control profile
Gary Lynn Woodrough from Holt, MI, age ~53 Get Report