Garry Kongtzu Kwong

7674352, Mar 9, 2010

Nov 28, 2006

11/564198

David Bour - Cupertino CA, US
Lori Washington - Union City CA, US
Sandeep Nijhawan - Los Altos CA, US
Ronald Stevens - San Ramon CA, US
Jacob Smith - Santa Clara CA, US
Alexander Tam - Union City CA, US
Nyi Oo Myo - Campbell CA, US
Steve Park - Cupertino CA, US
Rosemary Twist - San Jose CA, US
Garry Kwong - San Jose CA, US
Jie Su - Santa Clara CA, US

Applied Materials, Inc. - Santa Clara CA

C23F 1/00
H01L 21/306

15634534

A gaseous mixture is deposited onto a substrate surface using a showerhead. A first plenum of the showerhead has a plurality of channels fluidicly coupled with an interior of a processing chamber. A second plenum gas flows through a plurality of tubes extending from a second plenum of the showerhead through the channels into the interior of the processing chamber. The diameter of the tubes is smaller than the diameter of the channels such that a first plenum gas flows into the interior of the processing chamber through a space defined between the outer surface of the tubes and the surface of the channels. The length and diameter of the tubes determine the level of distribution and the molar ratio of the first gas and the second gas in the gaseous mixture that is deposited on the surface of the substrate.

7781016, Aug 24, 2010

Aug 23, 2006

11/508375

Ronald Stevens - San Ramon CA, US
Brendan McDougall - Livermore CA, US
Jacob W. Smith - Santa Clara CA, US
Garry Kwong - San Jose CA, US
Sandeep Nijhawan - Los Altos CA, US
Lori D. Washington - Union City CA, US

Applied Materials, Inc. - Santa Clara CA

C23C 16/00

4272481, 427252, 42725514, 42725523, 42725528, 118688, 118692, 118726, 118715

Methods are disclosed of determining a fill level of a precursor in a bubbler. The bubbler is fluidicly coupled with a substrate processing chamber through a vapor-delivery system. The bubbler and vapor-delivery system are backfilled with a known dose of a backfill gas. A pressure and temperature of the backfill gas are determined, permitting a total volume for the backfill gas in the bubbler and vapor-delivery system to be determined by application of a gas law. The fill level of the precursor in the bubbler is determined as a difference between (1) a total volume of the bubbler and vapor-delivery system and (2) the determined total volume for the backfill gas.

7908743, Mar 22, 2011

Apr 27, 2009

12/430807

Zhiyong Li - San Jose CA, US
Chuck Luu - Fremont CA, US
Gopalakrishna B. Prabhu - San Jose CA, US
Danny Cam Toan Lu - San Francisco CA, US
Garry Kwong - San Jose CA, US
David Tanner - San Jose CA, US

Applied Materials, Inc. - Santa Clara CA

H05K 3/36

29830, 29825, 29832, 136256, 136258

Embodiments of the present invention provide a method of forming an electrical connection on a device. In one embodiment, the electrical connection is attached to the device via an adhesive having electrically conductive particles disposed therein. In one embodiment, the adhesive is cured while applying pressure such that the conductive particles align, have a reduced particle-to-particle spacing, or come into contact with each other to provide a more directly conductive (less resistive) path between the electrical connection and the device. In one embodiment of the present invention, a method for forming an electrical lead on a partially formed solar cell during formation of the solar cell device is provided. The method comprises placing a side-buss wire onto a pattern of electrically conductive adhesive disposed on a back contact layer of a solar cell device substrate, laminating the side-buss wire and electrically conductive adhesive between the solar cell device substrate and a back glass substrate to form a composite solar cell structure, and curing the electrically conductive adhesive while applying pressure and heat to the composite solar cell structure.

20070254093, Nov 1, 2007

Apr 26, 2006

11/411667

Sandeep Nijhawan - Los Altos CA, US
Lori Washington - Union City CA, US
Jacob Smith - Santa Clara CA, US
Garry Kwong - San Jose CA, US
David Bour - Cupertino CA, US
David Eaglesham - Livermore CA, US

Applied Materials, Inc. - Santa Clara CA

C23C 16/52
C23C 16/00
B05C 11/00

427008000, 427255280, 118688000, 118715000

Methods and systems permit fabricating structures using liquid sources without active temperature control. A liquid or solid source of the precursor is provided in a bubbler. A carrier gas source is flowed into the source to generate a flow of precursor vapor carried by the carrier gas. A relative concentration of the precursor vapor to the carrier gas of the flow is measured. A mass flow rate of the precursor in the flow is determined from the measured relative concentration. A flow rate of the carrier gas into the source is changed to maintain the mass flow rate at a defined value or within a defined range.

20100071752, Mar 25, 2010

Oct 23, 2009

12/604939

Kim Vellore - San Jose CA, US
Danny C. Lu - San Francisco CA, US
Garry Kwong - San Jose CA, US

Applied Materials, Inc. - Santa Clara CA

H01L 31/042
H01L 31/18

136244, 438 66, 257E21499

Solar cell modules and methods for making solar cell modules are disclosed. In one or more embodiments of the invention, a buss is adhered to the solar cell modules using a plurality of conductive adhesive drops.

20120225191, Sep 6, 2012

Mar 1, 2011

13/037992

Joseph Yudovsky - Campbell CA, US
Garry K. Kwong - San Jose CA, US
Mei Chang - Saratoga CA, US
Anh N. Nguyen - Milpitas CA, US
David Thompson - San Jose CA, US

Applied Materials, Inc. - Santa Clara CA

C23C 16/455
B05D 5/12

427 58, 118729, 118719

Provided are atomic layer deposition apparatus and methods including a gas distribution plate comprising at least one gas injector unit. Each gas injector unit comprises a plurality of elongate gas injectors including at least two first reactive gas injectors and at least one second reactive gas injector, the at least two first reactive gas injectors surrounding the at least one second reactive gas injector. Also provided are atomic layer deposition apparatuses and methods including a gas distribution plate with a plurality of gas injector units.

20120225192, Sep 6, 2012

Jul 25, 2011

13/189692

Joseph Yudovsky - Campbell CA, US
Garry K. Kwong - San Jose CA, US
Mei Chang - Saratoga CA, US
Anh N. Nguyen - Milpitas CA, US
David Thompson - San Jose CA, US

Applied Materials, Inc. - Santa Clara CA

C23C 16/458
B05D 5/12

427 58, 118719

Provided are atomic layer deposition apparatus and methods including a gas distribution plate comprising at least one gas injector unit. Each gas injector unit comprises a plurality of elongate gas injectors including at least two first reactive gas injectors and at least one second reactive gas injector, the at least two first reactive gas injectors surrounding the at least one second reactive gas injector. Also provided are atomic layer deposition apparatuses and methods including a gas distribution plate with a plurality of gas injector units.

20120269967, Oct 25, 2012

Apr 2, 2012

13/437567

Joseph Yudovsky - Campbell CA, US
Garry K. Kwong - San Jose CA, US
Dieter Haas - San Jose CA, US
Steven D. Marcus - San Jose CA, US
Timothy W. Weidman - Sunnyvale CA, US

Applied Materials, Inc. - Santa Clara CA

C23C 16/455
B05B 1/14

42725526, 118724, 239548

Provided are gas distribution plates for atomic layer deposition apparatus including a hot wire or hot wire unit which can be heated to excite gaseous species while processing a substrate. Methods of processing substrates using a hot wire to excite gaseous precursor species are also described.