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Fred E Babian

from Palo Alto, CA
Age ~66
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Also known as:
Fred Te Babian, Fred Benef Babian, Freddie E Babian, Frederick E Babian
Phone and address:
3708 Redwood Cir, Palo Alto, CA 94306
Related to:
Freddie E Babian, 66Andrew G Babian, 57Erna R Babian, 90
Connected to:
Donald J Babiarz, 55Elizabeth A Babiarz, 45Joseph F Babiarz, 73Karen E Babiarz, 57Lynn M Babiarz, 51Marion R Babiarz, 95Randolph J Babiarz, 79Alija Babic, 100Anka Babic, 81Anna M Babic, 97

Fred Babian Phones & Addresses

  • 3708 Redwood Cir, Palo Alto, CA 94306
  • 4151 El Camino Way, Palo Alto, CA 94306
  • Davis, CA
  • Boulder Creek, CA
  • Mountain View, CA

Work

Company: Svxr Jan 2013 Position: Mts

Education

Degree: Master of Business Administration, Masters School / High School: Santa Clara University 1993 to 1996 Specialities: Business

Skills

Semiconductors • Embedded Systems • Engineering • Software Engineering • Software Development • Engineering Management • Analytics • Cross Functional Team Leadership • Program Management • Product Management • Simulations • Algorithms • Distributed Systems • R&D • Python • C • Product Development • Enterprise Software • Cloud Computing • Image Processing • Machine Learning • Optics • Software Design • Saas • Big Data • Physics • Business Intelligence

Languages

English

Industries

Computer Software

Resumes

Resumes

Fred Babian Photo 1

Fred Babian

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Location:
1119 Oeste Dr, Davis, CA 95616
Industry:
Computer Software
Work:
Svxr
Mts
Advanced Image Science 2006 - 2013
Vice President Engineering
Phaethon Communications 2001 - 2003
Engineer
Kla-Tencor Jan 1, 1982 - Jan 1, 2001
Engineer
Education:
Santa Clara University 1993 - 1996
Master of Business Administration, Masters, Business Stanford University 1980 - 1986
Doctorates, Doctor of Philosophy, Electrical Engineering
Skills:
Semiconductors
Embedded Systems
Engineering
Software Engineering
Software Development
Engineering Management
Analytics
Cross Functional Team Leadership
Program Management
Product Management
Simulations
Algorithms
Distributed Systems
R&D
Python
C
Product Development
Enterprise Software
Cloud Computing
Image Processing
Machine Learning
Optics
Software Design
Saas
Big Data
Physics
Business Intelligence
Languages:
English

Publications

Us Patents

Apparatus And Method For Secondary Electron Emission Microscope

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US Patent:
6713759, Mar 30, 2004
Filed:
Nov 2, 2001
Appl. No.:
10/033452
Inventors:
David L. Adler - San Jose CA
David J. Walker - Sunol CA
Fred Babian - Boulder Creek CA
Travis Wolfe - Santa Clara CA
Assignee:
KLA Tencor Corporation - San Jose CA
International Classification:
H01J 37244
US Classification:
250307, 350307
Abstract:
An apparatus and method for inspecting a surface of a sample, particularly but not limited to a semiconductor device, using an electron beam is presented. The technique is called Secondary Electron Emission Microscopy (SEEM), and has significant advantages over both Scanning Electron Microscopy (SEM) and Low Energy Electron Microscopy (LEEM) techniques. In particular, the SEEM technique utilizes a beam of relatively high-energy primary electrons having a beam width appropriate for parallel, multi-pixel imaging. The electron energy is near a charge-stable condition to achieve faster imaging than was previously attainable with SEM, and charge neutrality unattainable with LEEM. The emitted electrons may be detected using a time delay integration detector.

Apparatus And Method For Secondary Electron Emission Microscope

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US Patent:
6984822, Jan 10, 2006
Filed:
Apr 2, 2003
Appl. No.:
10/406339
Inventors:
David L. Adler - San Jose CA, US
David J. Walker - Sunol CA, US
Fred Babian - Boulder Creek CA, US
Travis Wolfe - Santa Clara CA, US
Assignee:
KLA-Tencor Corporation - San Jose CA
International Classification:
G01N 23/00
G21K 7/00
US Classification:
250310, 250307, 250397
Abstract:
An apparatus and method for inspecting a surface of a sample, particularly but not limited to a semiconductor device, using an electron beam is presented. The technique is called Secondary Electron Emission Microscopy (SEEM), and has significant advantages over both Scanning Electron Microscopy (SEM) and Low Energy Electron Microscopy (LEEM) techniques. In particular, the SEEM technique utilizes a beam of relatively high-energy primary electrons having a beam width appropriate for parallel, multi-pixel imaging. The electron energy is near a charge-stable condition to achieve faster imaging than was previously attainable with SEM, and charge neutrality unattainable with LEEM. The emitted electrons may be detected using a time delay integration detector.

Alignment Correction Prior To Image Sampling In Inspection Systems

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US Patent:
20020075385, Jun 20, 2002
Filed:
Jan 31, 2002
Appl. No.:
10/066161
Inventors:
Scott Young - Soquel CA, US
Roger Kroeze - Tracy CA, US
Curt Chadwick - Los Gatos CA, US
Nicholas Szabo - Cupertino CA, US
Kent Douglas - San Martin CA, US
Fred Babian - Boulder Creek CA, US
Assignee:
KLA INSTRUMENTS CORPORATION
International Classification:
H04N007/18
US Classification:
348/087000, 348/086000, 348/095000, 382/141000, 382/151000
Abstract:
A method and apparatus, and variations of each, for inspecting a wafer defining at least one die thereon is disclosed. The present invention first obtains the electronic image equivalent of two die, and then determines the x and y offset between those electronic images. Prior to inspection for defects, those two electronic images are aligned by adjusting the x and y positions of one electronic image of one die with respect to the electronic image of the other die. Once that is accomplished, the those electronic images are compared to detect any defects that may exist on one of the die.

Alignment Correction Prior To Image Sampling In Inspection Systems

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US Patent:
20030063190, Apr 3, 2003
Filed:
Dec 9, 2002
Appl. No.:
10/314546
Inventors:
Scott Young - Soquel CA, US
Roger Kroeze - Tracy CA, US
Curt Chadwick - Los Gatos CA, US
Nicholas Szabo - Cupertino CA, US
Kent Douglas - San Martin CA, US
Fred Babian - Boulder Creek CA, US
Assignee:
KLA INSTRUMENTS CORPORATION
International Classification:
G06K009/00
US Classification:
348/126000, 382/151000, 348/129000
Abstract:
A method and apparatus, and variations of each, for inspecting a wafer defining at least one die thereon is disclosed. The present invention first obtains the electronic image equivalent of two die, and then determines the x and y offset between those electronic images. Prior to inspection for defects, those two electronic images are aligned by adjusting the x and y positions of one electronic image of one die with respect to the electronic image of the other die. Once that is accomplished, the those electronic images are compared to detect any defects that may exist on one of the die.

Alignment Correction Prior To Image Sampling In Inspection Systems

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US Patent:
20050254698, Nov 17, 2005
Filed:
Jul 13, 2005
Appl. No.:
11/180348
Inventors:
Scott Young - Soquel CA, US
Roger Kroeze - Tracy CA, US
Curt Chadwick - Los Gatos CA, US
Nicholas Szabo - Cupertino CA, US
Kent Douglas - San Martin CA, US
Fred Babian - Boulder Creek CA, US
International Classification:
G06K009/00
H04N007/18
US Classification:
382145000, 348087000
Abstract:
A method and apparatus, and variations of each, for inspecting a wafer defining at least one die thereon is disclosed. The present invention first obtains the electronic image equivalent of two die, and then determines the x and y offset between those electronic images. Prior to inspection for defects, those two electronic images are aligned by adjusting the x and y positions of one electronic image of one die with respect to the electronic image of the other die. Once that is accomplished, the those electronic images are compared to detect any defects that may exist on one of the die.

Alignment Correction Prio To Image Sampling In Inspection Systems

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US Patent:
20080304734, Dec 11, 2008
Filed:
Aug 7, 2008
Appl. No.:
12/221806
Inventors:
Scott A. Young - Soquel CA, US
Roger Kroeze - Tracy CA, US
Curt H. Chadwick - Los Gatos CA, US
Nicholas Szabo - Cupertino CA, US
Kent E. Douglas - San Martin CA, US
Fred E. Babian - Boulder Creek CA, US
International Classification:
G06K 9/00
US Classification:
382141
Abstract:
A method and apparatus, and variations of each, for inspecting a wafer defining at least one die thereon is disclosed. The present invention first obtains the electronic image equivalent of two die, and then determines the x and y offset between those electronic images. Prior to inspection for defects, those two electronic images are aligned by adjusting the x and y positions of one electronic image of one die with respect to the electronic image of the other die. Once that is accomplished, the those electronic images are compared to detect any defects that may exist on one of the die.

Alignment Correction Prior To Image Sampling In Inspection Systems

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US Patent:
61410381, Oct 31, 2000
Filed:
Jun 27, 1997
Appl. No.:
8/884466
Inventors:
Scott A. Young - Soquel CA
Roger Kroeze - Tracy CA
Curt H. Chadwick - Los Gatos CA
Nicholas Szabo - Cupertino CA
Kent E. Douglas - San Martin CA
Fred E. Babian - Boulder Creek CA
Assignee:
KLA Instruments Corporation - San Jose CA
International Classification:
H04N 718
US Classification:
348 87
Abstract:
A method and apparatus, and variations of each, for inspecting a wafer defining at least one die thereon is disclosed. The present invention first obtains the electronic image equivalent of two die, and then determines the x and y offset between those electronic images. Prior to inspection for defects, those two electronic images are aligned by adjusting the x and y positions of one electronic image of one die with respect to the electronic image of the other die. Once that is accomplished, those electronic images are compared to detect any defects that may exist on one of the die.

Apparatus And Method For Secondary Electron Emission Microscope

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US Patent:
59733233, Oct 26, 1999
Filed:
Nov 5, 1997
Appl. No.:
8/964544
Inventors:
David L. Adler - San Jose CA
David J. Walker - Sunol CA
Fred Babian - Boulder Creek CA
Travis Wolfe - Santa Clara CA
Assignee:
KLA-Tencor Corporation - San Jose CA
International Classification:
H01J 3726
US Classification:
250310
Abstract:
An apparatus and method for inspecting a surface of a sample, particularly but not limited to a semiconductor device, using an electron beam is presented. The technique is called Secondary Electron Emission Microscopy (SEEM), and has significant advantages over both Scanning Electron Microscopy (SEM) and Low Energy Electron Microscopy (LEEM) techniques. In particular, the SEEM technique utilizes a beam of relatively high-energy primary electrons having a beam width appropriate for parallel, multi-pixel imaging. The electron energy is near a charge-stable condition to achieve faster imaging than was previously attainable with SEM, and charge neutrality unattainable with LEEM.
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Fred E Babian from Palo Alto, CA, age ~66 Get Report