Frank Z Hawrylo

46142924, Sep 30, 1986

Sep 30, 1985

6/781987

Carl Polansky - Landisville PA
Frank Z. Hawrylo - Trenton NJ

RCA Corporation - Princeton NJ

B23K 106

228 11

A die bonder for bonding a semiconductor die to a substrate is disclosed. The die bonder comprises a support assembly within a frame, which assembly supports an arm. Attached to said arm is a means for holding a die, e. g. a vacuum collet. A variable electrical scrubbing means comprises a plunger which oscillates reciprocally within an electromagnetic coil and contacts the arm, or a tab integral with said arm. This provides a corresponding uniform scrubbing action, perpendicular to said arm in the plane of the interface between the die and the substrate, between a die held by the holding means and a solder material interposed between the die and substrate.

45472300, Oct 15, 1985

Jul 30, 1984

6/635393

Frank Z. Hawrylo - Trenton NJ

The United States of America as represented by the Secretary of the Air
Force - Washington DC

H01L 21208

148171

A method for liquid phase epitaxy maskless deposition of a III-V compound on a substrate in a pre-determined pattern includes the steps of contacting a growth wafer having a patterned mask thereon to a growth solution in equilibrium and then increasing the temperature of the growth solution and wafer thereby locally melting the exposed portions of the wafer surface and locally changing the equilibrium properties of the growth solution. The substrate upon which the material is to be deposited is then contacted with the growth solution and the temperature lowered. Because of the locally varying equilibrium conditions the constituents of the growth solution will be preferentially deposited on those portions of the substrate corresponding to the unmasked portions of the growth wafer.

45404500, Sep 10, 1985

Oct 17, 1984

6/661646

Frank Z. Hawrylo - Trenton NJ

The United States of America as represented by the Secretary of the Air
Force - Washington DC

H01L 23208

148171

In order to prevent the formation of indium droplets upon the surface of an indium phosphide wafer during liquid phase epitaxial growth, a doped protective layer is deposited by LPE upon said substrate before epitaxial growth of additional layers occurs. The doped protective layer is composed of indium phosphide doped with tellurium to a concentration of about high 10. sup. 18 to low 10. sup. 19.

42330904, Nov 11, 1980

Jun 28, 1979

6/052787

Frank Z. Hawrylo - Trenton NJ
Henry Kressel - Elizabeth NJ

RCA Corporation - New York NY

H01L 21208

148171

In making a laser diode by a method which includes epitaxially depositing a plurality of layers of a semiconductor material on a substrate, the final outermost layer deposited is of a material which has a band-gap lower than the preceding adjacent layer, which readily accepts a conductivity modifier, which can be selectively etched from the preceding adjacent layer and which preferably has a lattice parameter substantially equal to that of the preceding adjacent layer. A conductivity modifier is then diffused along a narrow stripe into and through the outermost layer, into the preceding adjacent layer. The outermost layer is then etched away to expose the surface of the preceding adjacent layer and a metal contact is applied to the exposed surface.

48322512, May 23, 1989

Dec 13, 1983

6/560799

Frank Z. Hawrylo - Trenton NJ

General Electric Company - Schenectady NY

H01S 302
B23K 100

228105

An improved method of mounting electroluminescent semiconductor laser devices onto heatsinks, wherein easy subsequent location of the lasing spot of the laser is provided, is disclosed. The method comprises placing a reference mark on the front of the heatsink, wetting solder to the heatsink and allowing it to harden, contacting the laser device to the hardened solder, applying current to the laser device to cause light emission, aligning the lasing spot to the reference mark and bonding the laser device to the heatsink while maintaining such alignment.

39459020, Mar 23, 1976

Jul 22, 1974

5/490792

Frank Zygmunt Hawrylo - Trenton NJ
Henry Kressel - Elizabeth NJ

RCA Corporation - New York NY

C23C 1500

204192

A diamond body and an oxide substrate are simultaneously sputter-etched such that the diamond body is cleaned and a layer of the sputtered oxide is deposited on the clean surface of the diamond body, then a metallic layer is deposited on the oxide layer. This provides a metallized diamond body whose metallic layer will adhere to the body.

40245691, May 17, 1977

Jan 8, 1975

5/539532

Frank Zygmunt Hawrylo - Trenton NJ
Henry Kressel - Elizabeth NJ

RCA Corporation - New York NY

H01L 29161
H01L 2904
H01L 29167
H01L 2348

357 71

A semiconductor device has one surface of P type conductivity material having a wide energy bandgap and a large crystal lattice parameter. Applied to the P type surface of the semiconductor device is a degenerate region of semiconductor material, preferably a group III-V semiconductor material, having a narrower energy bandgap. The degenerate region is doped with tin to increase the crystal lattice of the region to more closely approximate the crystal lattice of the one surface of the semiconductor device. The degenerate region is compensatingly doped with a P type conductivity modifier. An electrical contact is applied to one surface of the degenerate region forming an ohmic contact with the semiconductor device.

43553966, Oct 19, 1982

Nov 23, 1979

6/096975

Frank Z. Hawrylo - Trenton NJ
Gregory H. Olsen - Plainsboro NJ

RCA Corporation - New York NY

H01S 319
H01L 2120

372 46

A semiconductor laser diode includes a substrate of indium phosphide of one conductivity type having on a surface thereof an indium phosphide first confinement layer of the same conductivity type followed by an active layer of indium gallium arsenide phosphide and an indium phosphide second confinement layer of the opposite conductivity type. On the second confinement layer is an indium gallium arsenide phosphide capping layer of either conductivity type having a stripe shaped opening therethrough. In the opening in the capping layer is a contact layer of indium gallium arsenide phosphide of the opposite conductivity type. The confinement layers, the active layer and the capping layer are formed by liquid phase epitaxy and the contact layer is formed by vapor phase epitaxy.