Francisco J Machuca

20120081132, Apr 5, 2012

Apr 5, 2011

13/080451

Francisco Machuca - Oakland CA, US
Ronald Chiarello - Lafayette CA, US
G. Lorimer Miller - Eastham MA, US
Joseph W. Foster - San Jose CA, US
David C. Tigwell - Houston TX, US

MKS Instruments, Inc. - Andover MA

G01R 27/28
H01F 17/06

324655, 336105

An apparatus includes a member including a ferromagnetic material, an inductance-capacitance resonant circuit, a substrate disposed relative to the member, and a plurality of radiation sources. The member includes a post disposed at its center and a surface extending to an outer wall. The member defines a gap between the post and the outer wall. The inductance-capacitance resonant circuit is configured to resonate at a measurement frequency. The circuit includes an inductor disposed relative to the post. The substrate is disposed relative to the member. The substrate is electromagnetically coupled to the inductor. The plurality of radiation sources is disposed radially outward from and circumferentially around the post of the member. The apparatus can be used to simultaneously measure conductance (inverse sheet resistance), steady state photoconductance, true steady state minority carrier lifetime, photoconductance build-up and photoconductance decay lifetime.

20120240843, Sep 27, 2012

Mar 22, 2011

13/069115

Francisco Machuca - Pleasant Hill CA, US

C30B 13/24
C30B 13/16

117 39, 117 43

A method and system is disclosed for making ultra thin wafer(s) or thin film(s) of c-Si on demand. One aspect of certain embodiments includes using a planar seed or crystal template in combination with shaped scanning heat sources to produce an intermediate seed or secondary crystal template, and finally producing an ultra thin wafer or thin film with a single crystal structure over an arbitrary area and film thickness starting from an initial low quality Si coating.

20120286806, Nov 15, 2012

Nov 9, 2011

13/292850

Francisco Machuca - Oakland CA, US
Ronald Chiarello - Lafayette CA, US
G. Lorimer Miller - Eastham MA, US
Joseph W. Foster - San Jose CA, US
David C. Tigwell - Houston TX, US
David Cornwell - Chester, GB

G01N 27/02

324655

A substrate is electromagnetically coupled into an inductance-capacitance resonant circuit formed from (i) a member comprising a ferromagnetic material, (ii) an inductor and (iii) the substrate. The substrate is illuminated for a first time period X to cause photoconduction in the substrate. Decay in conductivity of the substrate is monitored for a second time period Y. The ratio of X to Y is greater than 1:10. Bulk lifetime of the substrate is determined from the decay.

20130333611, Dec 19, 2013

Mar 11, 2013

13/794285

Francisco Machuca - Oakland CA, US

Tivra Corporation - Pleasant HIll CA

C30B 29/40
C30B 23/06
C30B 23/08
C30B 25/02
C30B 25/06
C30B 19/12
C30B 13/34
C30B 11/14
C30B 1/02
C30B 1/12
C30B 25/18
C30B 30/02
C30B 23/02
C30B 15/00

117 6, 423409, 2525191, 423412, 428220, 117 84, 117108, 117103, 117 88, 2041921, 117 13, 117 37, 117 81, 117 9, 117 95, 205188

A lattice matching layer for use in a multilayer substrate structure comprises a lattice matching layer. The lattice matching layer includes a first chemical element and a second chemical element. Each of the first and second chemical elements has a hexagonal close-packed structure at room temperature that transforms to a body-centered cubic structure at an α-β phase transition temperature higher than the room temperature. The hexagonal close-packed structure of the first chemical element has a first lattice parameter. The hexagonal close-packed structure of the second chemical element has a second lattice parameter. The second chemical element is miscible with the first chemical element to form an alloy with a hexagonal close-packed structure at the room temperature. A lattice constant of the alloy is approximately equal to a lattice constant of a member of group III-V compound semiconductors.

20190051517, Feb 14, 2019

Oct 5, 2018

16/153504

- Pleasant Hill CA, US
Francisco MACHUCA - Oakland CA, US

H01L 21/02
H01L 33/12
H01L 29/10
H01L 23/373
H01L 23/36

A multilayer semiconductor structure including at least in part a substrate and an III-N film layer. The substrate's constant of thermal expansion being substantially matched to the III-N film's constant of thermal expansion. The multilayer semiconductor structure may also include a crystal matching layer that has a lattice constant that substantially matches the lattice of constant of the III-N film. By not relying on the substrate for lattice matching the III-N film, the multilayer structure allows greater flexibility in the selection of an applicable substrate.

20180158672, Jun 7, 2018

Jan 19, 2018

15/876048

- Pleasant Hill CA, US
Francisco Machuca - Oakland CA, US

H01L 21/02
H01L 23/373

A multilayer semiconductor structure including at least in part a substrate and an III-N film layer. The substrate's constant of thermal expansion being substantially matched to the III-N film's constant of thermal expansion. The multilayer semiconductor structure may also include a crystal matching layer that has a lattice constant that substantially matches the lattice of constant of the III-N film. By not relying on the substrate for lattice matching the III-N film, the multilayer structure allows greater flexibility in the selection of an applicable substrate.