Inventors:
Etienne G. Colas - Asbury Park NJ
Herbert M. Cox - Berkeley Heights NJ
Assignee:
Bell Communications Research, Inc. - Livingston NJ
International Classification:
H01L 2120
Abstract:
A semiconductor structure having a face with macroscopic parallel steps and its method of making. The structure is formed by cutting a face on a crystal at a vicinal angle, that is, being misoriented from a major crystal face by a few degrees. Atomic sized microsteps are formed in the vicinal face. Parallel grooves or other regular irregularities are etched in the vicinal face. Subsequent epitaxial growth causes the microsteps to coalesce into macroscopic steps. Alternatively, etching or annealing can accomplish the same coalescing. Novel electronic structures can be fabricated on the stepped structure.