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Etienne Colas Phones & Addresses

  • Red Bank, NJ
  • Far Rockaway, NY
  • East Greenbush, NY

Publications

Us Patents

Graded-Index Waveguides

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US Patent:
49195042, Apr 24, 1990
Filed:
May 17, 1989
Appl. No.:
7/353407
Inventors:
Etienne G. Colas - Asbury Park NJ
Alfredo Yi-Yan - Eatontown Boro NJ
Assignee:
Bell Communications Research, Inc. - Livingston NJ
International Classification:
G02B 610
US Classification:
350 9612
Abstract:
A planar waveguide comprises a semiconductor substrate having one or more grooves along the surface of the substrate. A plurality of sequences of superlattice layers separated by a spacer layer over the grooved substrate is provided. The number of superlattice periods in each sequence changes from the base of the groove to the surface of the waveguide so as to provide a graded index of refraction in at least a portion of the region above the groove.

Optical Control Of Deposition Of Crystal Monolayers

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US Patent:
49311328, Jun 5, 1990
Filed:
Oct 7, 1988
Appl. No.:
7/255140
Inventors:
David E. Aspnes - Watchung NJ
Rajaram Bhat - Red Bank NJ
Etienne G. Colas - Asbury Park NJ
Leigh T. Florez - Atlantic Highlands NJ
James P. Harbison - Fair Haven NJ
Assignee:
Bell Communications Research, Inc. - Livingston NJ
International Classification:
C30B 2516
C30B 2302
C30B 3500
B05C 1100
US Classification:
156601
Abstract:
A method and apparatus for epitaxial growth of precisely one monolayer. The growth is by organometallic chemical vapor deposition in which the substrate is alternately exposed to the anion and cation of a III-V compound. During deposition of the cation, for instance Ga or Al, reflectance difference spectroscopy is performed to obtain the difference of reflected light beams polarized in orthogonal directions. A growth of a monolayer and even of a partial monolayer can be monitored in real time.

Selective Area Regrowth For Surface-Emitting Lasers And Other Sharp Features

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US Patent:
51048248, Apr 14, 1992
Filed:
Nov 6, 1990
Appl. No.:
7/609920
Inventors:
Edward M. Clausen - Eatontown NJ
Etienne G. Colas - Red Bank NJ
Ann C. Von Lehmen - Little Silver NJ
Assignee:
Bell Communications Research, Inc. - Livingston NJ
International Classification:
H01L 2120
H01L 21203
US Classification:
437 90
Abstract:
A method of etching and regrowing III-V compounds in a sharply defined vertical feature. Molecular beam epitaxy is used to grow a laterally undefined vertical-cavity, surface-emitting diode laser structure from semiconducting III-V materials. The structure includes interference mirrors defining the end of a Fabry-Perot cavity and a quantum-well layer in the middle of the cavity. A tungsten mask is then defined over the areas of the intended two-dimensional array of lasers. A chemically assisted ion beam etches through to the bottom of the laser structure to from an array of high aspect-ratio pillars. A thermal chlorine gas etch removes a portion of the sidewalls of the pillars without attacking the tungsten, thereby removing ion-beam damage at the sides of the vertical-cavities and creating a lip of the tungsten mask overhanging the pillar sidewall. Organo-metallic chemical vapor deposition is used to regrow III-V material around the pillars. This growth process can quickly planarize the pillars.

Method Of Making A Macroscopic Stepped Structure On A Vicinally Cut Crystal

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US Patent:
49870947, Jan 22, 1991
Filed:
Jun 2, 1989
Appl. No.:
7/360416
Inventors:
Etienne G. Colas - Asbury Park NJ
Herbert M. Cox - Berkeley Heights NJ
Assignee:
Bell Communications Research, Inc. - Livingston NJ
International Classification:
H01L 2120
US Classification:
437 81
Abstract:
A semiconductor structure having a face with macroscopic parallel steps and its method of making. The structure is formed by cutting a face on a crystal at a vicinal angle, that is, being misoriented from a major crystal face by a few degrees. Atomic sized microsteps are formed in the vicinal face. Parallel grooves or other regular irregularities are etched in the vicinal face. Subsequent epitaxial growth causes the microsteps to coalesce into macroscopic steps. Alternatively, etching or annealing can accomplish the same coalescing. Novel electronic structures can be fabricated on the stepped structure.
Etienne G Colas from Red Bank, NJ, age ~71 Get Report