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Eric Ramsland Phones & Addresses

  • 754 Maria Ln, Tempe, AZ 85284 (480) 705-9248
  • Phoenix, AZ
  • 754 E Maria Ln, Tempe, AZ 85284 (520) 705-9248

Work

Company: Freescale semiconductor Position: Program manager

Education

School / High School: University of Illinois at Urbana-Champaign 1980 to 1984

Skills

Semiconductors • Ic • Semiconductor Industry • Soc • Mixed Signal • Product Engineering • Asic • Cmos • Engineering Management • Electronics • Analog • Cross Functional Team Leadership • Failure Analysis • Microelectronics • Eda • Embedded Systems • Debugging

Emails

Industries

Semiconductors

Resumes

Resumes

Eric Ramsland Photo 1

Program Manager, Transportation Product Group

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Location:
24 east Cairo Dr, Tempe, AZ 85282
Industry:
Semiconductors
Work:
Freescale Semiconductor
Program Manager
Education:
University of Illinois at Urbana-Champaign 1980 - 1984
Skills:
Semiconductors
Ic
Semiconductor Industry
Soc
Mixed Signal
Product Engineering
Asic
Cmos
Engineering Management
Electronics
Analog
Cross Functional Team Leadership
Failure Analysis
Microelectronics
Eda
Embedded Systems
Debugging

Business Records

Name / Title
Company / Classification
Phones & Addresses
Eric Ramsland
Program Manager Transportation Product Group
Freescale Semiconductor, Inc
Mfg Semiconductors/Related Devices
2100 E Elliot Rd, Tempe, AZ 85284
(480) 413-8259, (480) 413-4100
Eric Ramsland
PARKLAND PROPERTIES, LLC
Nonresidential Building Operator
754 E Maria Ln, Tempe, AZ 85284

Publications

Us Patents

Piezoresistive Transducer With Low Drift Output Voltage

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US Patent:
50741527, Dec 24, 1991
Filed:
Dec 24, 1990
Appl. No.:
7/633828
Inventors:
Stuart Ellner - Scottsdale AZ
Laurel L. Hoekstra - Scottsdale AZ
Eric A. Ramsland - Tempe AZ
Renwin J. Yee - Mesa AZ
Assignee:
Motorola, Inc. - Schaumburg IL
International Classification:
G01L 100
US Classification:
73766
Abstract:
Leakage current is reduced in a piezoresistive transducer by forming a leakage barrier around a piezoresistive element of a piezoresistive transducer. The leakage barrier prevents the formation of a parasitic leakage path in the substrate thereby reducing the leakage current flowing through sections of the piezoresistive element, and stabilizing the resistance value and the output voltage of the piezoresistive transducer.
Eric Alan Ramsland from Tempe, AZ, age ~62 Get Report