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Emmanuel M Drege

from Marina, CA
Age ~54
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Also known as:
Emmanuel Michel Drege, Emmanuel Grege, L Drege
Related to:
Sebastien DregeInah Choi, 61
Connected to:
John S Dregely, 80Viktoria R Dregely, 35Deirdre A Dreger, 72Dianne L Dreger, 85Douglas S Dreger, 63Elsie B Dreger, 98Jeffrey S Dreger, 53Josh Dreger, 37Joyce E Dreger, 86Ryan A Dreger, 46

Emmanuel Drege Phones & Addresses

  • Marina, CA
  • 228 Arroyo Grande Way, Los Gatos, CA 95032 (408) 393-2247
  • 143 Creekside Village Dr, Los Gatos, CA 95032
  • 17655 Tourney Rd, Los Gatos, CA 95030
  • 4047 Crandall Cir, Santa Clara, CA 95054
  • 60 Descanso Dr, San Jose, CA 95134
  • Plano, TX
  • Richardson, TX
  • 228 Arroyo Grande Way, Los Gatos, CA 95032

Resumes

Resumes

Emmanuel Drege Photo 1

Technical Director

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Location:
228 Arroyo Grande Way, Los Gatos, CA 95032
Industry:
Semiconductors
Work:
Lam Research
Technical Director
Tokyo Electron Feb 1, 2010 - Apr 2016
Principal Research Scientist
Natera Apr 2009 - Feb 2010
Lead Software Architect
Tokyo Electron Jan 2009 - Mar 2009
Engineering Consultant
Cadence Design Systems Mar 2006 - Jan 2009
Research Manager and Senior Member of Consulting Staff
Education:
The University of Texas at Dallas 1998 - 2001
Esirem - Ecole Supérieure D'ingénieurs Numérique Et Matériaux 1991 - 1994
Master of Science, Masters, Engineering Université De Bourgogne 1994 - 1994
Master of Science, Masters, Physics Lycée Chrestien De Troyes
Skills:
Semiconductors
R&D
Simulations
Matlab
Metrology
Optics
Design of Experiments
Algorithms
Machine Learning
Optimization
Testing
Materials Science
Process Control
Product Development
Semiconductor Industry
Sensors
Physics
Modeling
Electronics
Jmp
Characterization
Manufacturing
Scatterometry
Distributed Systems
Thin Films
Ic
Data Mining
Optimizations
Software Engineering
Lithography
Image Processing
Silicon
Nanotechnology
Photolithography
Interests:
Education
Languages:
English
French
German
Emmanuel Drege Photo 2

Emmanuel Drege

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Publications

Us Patents

Metrology Hardware Adaptation With Universal Library

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US Patent:
6853942, Feb 8, 2005
Filed:
Aug 6, 2002
Appl. No.:
10/213485
Inventors:
Emmanuel Drege - San Jose CA, US
Junwei Bao - Santa Clara CA, US
Srinivas Doddi - Fremont CA, US
Vi Vuong - Fremont CA, US
Assignee:
Timbre Technologies, Inc. - Santa Clara CA
International Classification:
G06F019/00
G01B011/24
G01B009/02
G06K009/46
US Classification:
702119, 356369, 356499, 702189, 438 16, 382144
Abstract:
To generate sets of coefficients for use in optical metrology of semiconductor structures, at least three optical metrology signals for a set of parameters are obtained. The optical metrology signals are indicative of light diffracted from a semiconductor structure, and a value of at least one parameter of the set of parameters is varied to produce each signal. Functional relationships between the at least three optical metrology signals are obtained, the functional relationships including at least three coefficient values. At least three sets of coefficients from the at least three coefficient values of the functional relationships are determined.

Edge Roughness Measurement In Optical Metrology

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US Patent:
7046375, May 16, 2006
Filed:
May 2, 2003
Appl. No.:
10/428186
Inventors:
Joerg Bischoff - Ilmenau, DE
Emmanuel Drege - San Jose CA, US
Sanjay Yedur - San Ramon CA, US
Assignee:
Timbre Technologies, Inc. - Santa Clara CA
International Classification:
G01B 11/30
US Classification:
356600, 25055922
Abstract:
Edge roughness and deterministic profile of a structure formed on a semiconductor wafer are measured using optical metrology by directing an incident beam on the structure using a source and receiving the diffracted beam from the structure using a detector. The received diffracted beam is processed using a processor to determine a deterministic profile of the structure and to measure an edge roughness of the structure.

Optical Metrology Model Optimization Based On Goals

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US Patent:
7171284, Jan 30, 2007
Filed:
Sep 21, 2004
Appl. No.:
10/946729
Inventors:
Vi Vuong - Fremont CA, US
Emmanuel Drege - San Jose CA, US
Shifang Ll - Pleasanton CA, US
Junwei Bao - Sunnyvale CA, US
Assignee:
Timbre Technologies, Inc. - Santa Clara CA
International Classification:
G06F 19/00
H01L 21/00
US Classification:
700121, 438 16, 702 85, 703 6
Abstract:
The optimization of an optical metrology model for use in measuring a wafer structure is evaluated. An optical metrology model having metrology model variables, which includes profile model parameters of a profile model, is developed. One or more goals for metrology model optimization are selected. One or more profile model parameters to be used in evaluating the one or more selected goals are selected. One or more metrology model variables to be set to fixed values are selected. One or more selected metrology model variables are set to fixed values. One or more termination criteria for the one or more selected goals are set. The optical metrology model is optimized using the fixed values for the one or more selected metrology model variables. Measurements for the one or more selected profile model parameters are obtained using the optimized optical metrology model. A determination is then made as to whether the one or more termination criteria are met by the obtained measurements.

Selection Of Wavelengths For Integrated Circuit Optical Metrology

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US Patent:
7216045, May 8, 2007
Filed:
Jun 3, 2002
Appl. No.:
10/162516
Inventors:
Srinivas Doddi - Fremont CA, US
Lawrence Lane - San Jose CA, US
Vi Vuong - Fremont CA, US
Mike Laughery - Austin TX, US
Junwei Bao - Fremont CA, US
Kelly Barry - Saratoga CA, US
Nickhil Jakatdar - Los Altos CA, US
Emmanuel Drege - San Jose CA, US
Assignee:
Timbre Technologies, Inc. - Santa Clara CA
International Classification:
G01R 13/00
G01R 31/26
US Classification:
702 66, 702159, 702172, 438 16
Abstract:
Specific wavelengths to use in optical metrology of an integrated circuit can be selected using one or more selection criteria and termination criteria. Wavelengths are selected using the selection criteria, and the selection of wavelengths is iterated until the termination criteria are met.

Model And Parameter Selection For Optical Metrology

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US Patent:
7330279, Feb 12, 2008
Filed:
Jul 25, 2002
Appl. No.:
10/206491
Inventors:
Vi Vuong - Fremont CA, US
Emmanuel Drege - San Jose CA, US
Junwei Bao - Fremont CA, US
Srinivas Doddi - Fremont CA, US
Xinhui Niu - Los Altos CA, US
Nickhil Jakatdar - Los Altos CA, US
Assignee:
Timbre Technologies, Inc. - Santa Clara CA
International Classification:
G01B 11/14
G01B 7/00
G01B 15/00
G01N 21/86
G01V 8/00
G06F 15/00
G01R 31/26
H01L 21/66
US Classification:
356625, 25055919, 25055922, 702155, 438 16
Abstract:
A profile model for use in optical metrology of structures in a wafer is selected, the profile model having a set of geometric parameters associated with the dimensions of the structure. A set of optimization parameters is selected for the profile model using one or more input diffraction signals and one or more parameter selection criteria. The selected profile model and the set of optimization parameters are tested against one or more termination criteria. The process of selecting a profile model, selecting a set of optimization parameters, and testing the selected profile model and set of optimization parameters is performed until the one or more termination criteria are met.

Selecting A Hypothetical Profile To Use In Optical Metrology

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US Patent:
7394554, Jul 1, 2008
Filed:
Sep 15, 2003
Appl. No.:
10/663300
Inventors:
Vi Vuong - Fremont CA, US
Junwei Bao - Santa Clara CA, US
Srinivas Doddi - Fremont CA, US
Emmanuel Drege - San Jose CA, US
Jin Wen - Sunnyvale CA, US
Sanjay Yedur - San Jose CA, US
Doris Chin - Milpitas CA, US
Nickhil Jakatdar - Los Altos CA, US
Lawrence Lane - San Jose CA, US
Assignee:
Timbre Technologies, Inc. - Santa Clara CA
International Classification:
G01B 11/00
US Classification:
356625, 356445, 3562372, 3562375
Abstract:
A hypothetical profile is used to model the profile of a structure formed on a semiconductor wafer to use in determining the profile of the structure using optical metrology. To select a hypothetical profile, sample diffraction signals are obtained from measured diffraction signals of structures formed on the wafer, where the sample diffraction signals are a representative sampling of the measured diffraction signals. A hypothetical profile is defined and evaluated using a sample diffraction signal from the obtained sample diffraction signals.

Selection Of Wavelengths For Integrated Circuit Optical Metrology

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US Patent:
7474993, Jan 6, 2009
Filed:
Apr 20, 2007
Appl. No.:
11/788735
Inventors:
Srinivas Doddi - Fremont CA, US
Lawrence Lane - San Jose CA, US
Vi Vuong - Fremont CA, US
Michael Laughery - Austin TX, US
Junwei Bao - Palo Alto CA, US
Kelly Barry - Saratoga CA, US
Nickhil Jakatdar - Los Altos CA, US
Emmanuel Drege - San Jose CA, US
Assignee:
Timbre Technologies, Inc. - Santa Clara CA
International Classification:
G01R 13/00
G01R 31/26
US Classification:
702196, 702 66, 702159, 702172, 438 16
Abstract:
Specific wavelengths to use in optical metrology of an integrated circuit can be selected using one or more selection criteria and termination criteria. Wavelengths are selected using the selection criteria, and the selection of wavelengths is iterated until the termination criteria are met.

Model And Parameter Selection For Optical Metrology

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US Patent:
7505153, Mar 17, 2009
Filed:
Feb 12, 2008
Appl. No.:
12/030166
Inventors:
Vi Vuong - Fremont CA, US
Emmanuel Drege - San Jose CA, US
Junwei Bao - Fremont CA, US
Srinivas Doddi - Fremont CA, US
Xinhui Niu - San Jose CA, US
Nickhil Jakatdar - Los Altos CA, US
Assignee:
Timbre Technologies, Inc. - Santa Clara CA
International Classification:
G01B 11/14
G01B 15/00
G01B 7/00
G01N 21/86
G01V 8/00
G06F 15/00
G01R 31/26
H01L 21/66
US Classification:
356625, 25025019, 25055922, 702155, 438 16
Abstract:
A profile model for use in optical metrology of structures in a wafer is selected, the profile model having a set of geometric parameters associated with the dimensions of the structure. The set of geometric parameters is selected to a set of optimization parameters. The number of optimization parameters within the set of optimization parameters is less than the number of geometric parameters within the set of geometric parameters. A set of selected optimization parameters is selected from the set of optimization parameters. The parameters of the set of selected geometric parameters are used as parameters of the selected profile model. The selected profile model is tested against one or more termination criteria.
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Emmanuel M Drege from Marina, CA, age ~54 Get Report